Semiconductor device and method for fabricating the same

  • US 20050054195A1
  • Filed: 07/28/2004
  • Published: 03/10/2005
  • Est. Priority Date: 09/09/2003
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a substrate provided with a semiconductor element;

    a lower interlayer dielectric film provided on the substrate;

    a lower interconnect groove provided in the lower interlayer dielectric film;

    a lower interconnect provided within the lower interconnect groove and having convex or concave portions at least at one of its side surfaces, bottom surface and upper surface;

    an upper interlayer dielectric film provided over the lower interlayer dielectric film and the lower interconnect; and

    an upper plug that passes through the upper interlayer dielectric film and comes into contact with a part of the lower interconnect.

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