Temperature measuring system, heating device using it and production method for semiconductor wafer, heat ray insulating translucent member, visible light reflection membner, exposure system-use reflection mirror and exposure system, and semiconductor device produced by using them and vetical heat treating device

• US 20050063451A1
• Filed: 02/24/2003
• Published: 03/24/2005
• Est. Priority Date: 02/28/2002
• Status: Abandoned Application

• Current Assignee: Shin-Etsu Handotai Co., Ltd. (Shin-Etsu Chemical Company Limited)
• Original Assignee: Shin-Etsu Handotai Co., Ltd. (Shin-Etsu Chemical Company Limited)
• Inventors: Abe, Takao, Imai, Masayuki
• Application Number:
  US10/504,223
• Publication Number:
  US 20050063451A1
• Time in Patent Office: Days
• US Class Current: 374/121
• CPC Class Codes: E06B 2009/2464 featuring transparency control by applying voltage, e.g. LCD, electrochromic panels
• CPC Class Codes: E06B 9/386 Details of lamellae
• CPC Class Codes: G01J 5/0003 for sensing the radiant heat transfer of samples, e.g. emittance meter
• CPC Class Codes: G01J 5/0007 of wafers or semiconductor substrates, e.g. using Rapid Thermal Processing
• CPC Class Codes: G01J 5/08 Optical arrangements
• CPC Class Codes: G01J 5/0808 Convex mirrors
• CPC Class Codes: G01J 5/0813 Planar mirrors; Parallel phase plates
• CPC Class Codes: G01J 5/0821 Optical fibres
• CPC Class Codes: G01J 5/0846 having multiple detectors for performing different types of detection, e.g. using radiometry and reflectometry channels
• CPC Class Codes: G02B 7/181 with means for compensating for changes in temperature or for controlling the temperature; thermal stabilisation
• CPC Class Codes: G02B 7/1815 with cooling or heating systems cooling arrangements for laser mirrors H01S3/0401
• CPC Class Codes: H01L 21/67115 mainly by radiation
• CPC Class Codes: H01L 21/67248 Temperature monitoring

Abstract

Oppositely of a temperature measuring surface of an object-to-be-measured 16, a reflecting member 28 is disposed while being spaced by a reflection gap 35 from the temperature measuring surface. The reflecting member 28 is composed of a heat ray reflecting material capable of reflecting heat ray in a specific wavelength band, in a portion including a reflection surface 35a. A heat ray extraction pathway section 30 is disposed through the reflecting member 28 so that one end thereof faces the temperature measuring surface. Heat ray extracted through the heat ray extraction pathway section from the reflection gap is detected by a temperature detection section 34. The heat ray reflecting material is configured in a form of a stack comprising a plurality of element reflecting layers composed of a material having transparent properties to the heat ray, in which every adjacent two element reflecting layers are composed of a combination of materials having refractive indices which differ from each other by 1.1 or more. This makes the measurement be hardly affected by radiation ratio of the object-to-be-measured when temperature of the object-to-be-measured is measured by a radiation thermometer, enables to measure its temperature more correctly irrespective of the surface state thereof, and can simplify configuration of a measurement system.

Claims

1. A temperature measuring system for measuring temperature of an object-to-be-measured by detecting heat ray radiated from the object-to-be-measured, comprising:

a reflecting member which is disposed so as to oppose with a temperature measurement surface of the object-to-be-measured while forming a reflection gap between itself and the temperature measurement surface, and has a portion of which including a reflection surface composed of a heat ray reflecting material capable of reflecting heat ray of a specific wavelength band, so as to allow multiple reflection of the heat ray between itself and the temperature measurement surface;

a heat ray extraction pathway section disposed so as to direct one end thereof as being opposed to the temperature measurement surface, penetrating the reflecting member; and

a temperature detection section for measuring temperature of the object-to-be-measured on the temperature measurement surface thereof, by detecting the heat ray extracted out from the reflection gap through the heat ray extraction pathway section, wherein

the heat ray reflecting material is configured in a form of a stack comprising a plurality of element reflecting layers composed of a material having transparent properites to the heat ray, in which every adjacent two element reflecting layers are composed of a combination of materials having refractive indices which differ from each other by 1.1 or more.

2. The temperature measuring system as claimed in claim 1, wherein the specific wavelength band falls in a range from 1 to 10 μ

m.

3. The temperature measuring system as claimed in claim 1, wherein the stack includes a first and second element reflecting layers differing in refractive index and adjacent to each other, and a periodic stack unit including the first and second element reflecting layers are formed in the number of periodicity of 2 or more on the surface of a base.

4. The temperature measuring system as claimed in claim 3, wherein the stack includes a layer comprising a semiconductor or an insulating material having a refractive index of 3 or above, as the first element reflecting layer.

5. The temperature measuring system as claimed in claim 4, wherein the first element reflecting layer is a Si layer.

6. The temperature measuring system as claimed in claim 4, wherein the stack includes a layer comprising any one of SiO₂, BN, AlN, Si₃N₄, Al₂O₃, TiO₂, TiN and CN, as the second element reflecting layer.

7. The temperature measuring system as claimed in claim 3, wherein the first or second element reflecting layer is a Si layer, and other element reflecting layer adjacent thereto is a SiO₂ layer or a BN layer.

8. The temperature measuring system as claimed in claim 3, wherein the number of periodicity of formation of the periodic stack unit is 5 or less.

9. A heating apparatus comprising:

a container having an object-to-be-processed housing space formed therein;

a heating source for heating the object-to-be-processed in the object-to-be-processed housing space;

the temperature measuring system as claimed in claim 1 disposed so that the reflecting member thereof is opposed to the object-to-be-processed which is placed as an object-to-be-measured; and

a control section for controlling output of the heating source based on temperature information detected by the temperature measuring system.

10. The heating apparatus as claimed in claim 9, wherein the heating source is disposed on the opposite side of the reflecting member while placing the object-to-be-processed in between.

11. The heating apparatus as claimed in claim 10, wherein the object-to-be-processed has a plate form, the reflecting member is composed as a reflecting plate opposed approximately in parallel to a first main surface of the plate-formed object-to-be-processed, and the heating source is a heating lamp opposingly disposed as being spaced by a heating gap from a second main surface of the object-to-be-processed.

12. The heating apparatus as claimed in claim 11, wherein individual light emitting sections of a plurality of the heating lamps are disposed in a in-plane direction approximately parallel to the second main surface of the object-to-be-processed according to a two-dimensional arrangement.

13. A method of fabricating a semiconductor wafer in which a semiconductor wafer is placed as a plate-formed object-to-be-processed in the heating apparatus as claimed in claim 11, and the semiconductor wafer is annealed in the heating apparatus.

14. The method of fabricating a semiconductor wafer as claimed in claim 13, wherein the semiconductor wafer is a silicon single crystal wafer.

15. The method of fabricating a semiconductor wafer as claimed in claim 14, wherein the annealing is carried out in an oxygen-containing atmosphere, in order to form an oxide film on the surface of the silicon single crystal substrate.

16. The method of fabricating a semiconductor wafer as claimed in claim 14, wherein the annealing is carried out while introducing a source gas of the silicon single crystal film into the container, in order to form a silicon single crystal film by vapor phase growth on the surface of the silicon single crystal substrate.

17. A lamp having a light emitting portion, and a bulb surrounding the light emitting portion and allowing light from the light emitting portion to emit outward, wherein the bulb comprising:

a base having a transparent properties to visible light emitted from the light emitting portion; and

a heat ray reflecting material layer formed on the surface of the base, and for reflecting heat ray emitted from the light emitting portion towards inside of the bulb while also allowing the visible light to transmit therethrough, wherein

the heat ray reflecting material layer has a stacked structure in which refractive index to the heat ray periodically varies in the direction of stacking, wherein the range of variation within a single period of the refractive index is set to 1.1 or above, and

converted thickness θ

′

on the single period basis expressed by the formula (1) below is adjusted to 0.4 to 2 μ

m;

θ

′

=∫

₀^tn(t)·

tdt 

 

(1)

where the function n(t) expresses distribution of refractive index to the heat ray in the direction of thickness t in a single period.

18. The lamp as claimed in claim 17, wherein the heat ray reflecting material layer is formed as a stack in which a periodic stack unit, comprising adjacent first and second element reflecting layers differing in refractive index, is stacked in the number of periodicity of 2 or more.

19. The lamp as claimed in claim 17, wherein the bulb has, as being formed on the surface of the base, an ultraviolet radiation reflecting material layer for providing an ultraviolet intercepting function to the base by reflecting ultraviolet radiation while allowing the visible light to transmit therethrough, besides the heat ray reflecting material layer.

20. The lamp as claimed in claim 19, wherein the ultraviolet radiation reflecting material layer has a structure in which refractive index to ultraviolet radiation periodically varies in the direction of stacking, wherein the range of variation within a single period of the refractive index is set to 1.1 or above, and

converted thickness θ

′

on the single period basis expressed by using formula n(t), which expresses distribution of refractive index to the ultraviolet radiation in the direction of thickness t of a single period, is adjusted to 0.1 to 0.2 μ

m.

21. The lamp as claimed in claim 20, wherein the ultraviolet radiation reflecting material layer is formed as a stack in which a periodic stack unit, comprising adjacent first and second element reflecting layers differing in refractive index, is stacked in the number of periodicity of 2 or more.

22. The lamp as claimed in claim 18, wherein a relation t1<

t2 is satisfied, where t1 is thickness of the high refractive index layer of either of the first element reflecting layer and the second element reflecting layer composing the periodic stack unit, and t2 is thickness of the low refractive index layer.

23. The lamp as claimed in claim 22, wherein thickness t1 of the high refractive index layer and thickness t2 of the low refractive index layer are individually determined so as to nearly equalize t1×

n1 to t2×

n2, where n1 is refractive index to heat ray or ultraviolet radiation to be reflected of the high refractive index layer, and n2 is the same of the low refractive index layer.

24. The lamp as claimed in claim 22, wherein the stack includes a layer composed of a semiconductor or an insulating material having a refractive index of 3 or above, as the first element reflecting layer.

25. The lamp as claimed in claim 24, wherein the first element reflecting layer is a Si layer.

26. The lamp as claimed in claim 24, wherein the stack includes a layer comprising any one of SiO₂, BN, AlN, Si₃N₄, Al₂O₃, TiO₂, TiN and CN, as the second element reflecting layer.

27. The lamp as claimed in claim 22, wherein the first or second element reflecting layer is a Si layer, and other element reflecting layer adjacent thereto is a SiO₂ layer or a BN layer.

28. The lamp as claimed in claim 24, wherein the number of periodicity of formation of the periodic stack unit is 5 or less.

29. A heat ray intercepting light transmissive member comprising:

a base having transparent properties to the visible light; and

a heat ray reflecting material layer formed on the surface of the base, and providing a heat ray intercepting function to the base by reflecting heat ray while allowing the visible light to transmit therethrough, wherein

the heat ray reflecting material layer has a stacked structure in which refractive index to the heat ray periodically varies in the direction of stacking, wherein the range of variation within a single period of the refractive index is set to 1.1 or above, and

converted thickness θ

′

on the single period basis expressed by the formula (1) below is adjusted to 0.4 to 2 μ

m;

θ

′

=∫

₀^tn(t)·

tdt 

 

(1)

where the function n(t) expresses distribution of refractive index to the heat ray in the direction of thickness t in a single period.

30. The heat ray intercepting light transmissive member as claimed in claim 29, wherein the heat ray reflecting material layer has a band width of high reflectivity band, in which a reflectivity of 95% or above is ensured, of at least 0.5 μ

m in a wavelength band of 0.8 to 4 μ

m.

31. The heat ray intercepting light transmissive member as claimed in claim 29, wherein the entire portion of the heat ray intercepting light transmissive member has an overall transmissivity to visible light of 70% or above in a wavelength band of 0.4 to 0.8 μ

m.

32. The heat ray intercepting light transmissive member as claimed in claim 29, wherein the heat ray reflecting material layer is formed as a stack in which a periodic stack unit, comprising adjacent first and second element reflecting layers differing in refractive index, is stacked in the number of periodicity of 2 or more.

33. The heat ray intercepting light transmissive member as claimed in claim 29, further comprising an ultraviolet radiation reflecting material layer for providing an ultraviolet intercepting function to the base by reflecting ultraviolet radiation while allowing the visible light to transmit therethrough, as being formed on the surface of the base besides the heat ray reflecting material layer.

34. The heat ray intercepting light transmissive member as claimed in claim 33, wherein the ultraviolet radiation reflecting material layer has a structure in which refractive index to ultraviolet radiation periodically varies in the direction of stacking, wherein the range of variation within a single period of the refractive index is set to 1.1 or above, and

converted thickness θ

′

on the single period basis expressed by using formula n(t), which expresses distribution of refractive index to the ultraviolet radiation in the direction of thickness t of a single period, is adjusted to 0.1 to 0.2 μ

m.

35. The heat ray intercepting light transmissive member as claimed in claim 34, wherein the ultraviolet radiation reflecting material layer has a band width of high reflectivity band, in which a reflectivity of 70% or above is ensured, of at least 0.1 μ

m in a wavelength band of 0.2 to 0.4 μ

m.

36. The heat ray intercepting light transmissive member as claimed in claim 33, wherein the ultraviolet radiation reflecting material layer is formed as a stack in which a periodic stack unit, comprising adjacent first and second element reflecting layers differing in refractive index, is stacked in the number of periodicity of 2 or more.

37. The heat ray intercepting light transmissive member as claimed in claim 32, wherein a relation of t1<

t2 satisfied, where t1 is thickness of the high refractive index layer of either of the first element reflecting layer and the second element reflecting layer composing the periodic stack unit, and t2 is thickness of the low refractive index layer.

38. The heat ray intercepting light transmissive member as claimed in claim 37, wherein thickness t1 of the high refractive index layer and thickness t2 of the low refractive index layer are individually determined so as to nearly equalize t1×

n1 to t2×

n2, where n1 is refractive index to heat ray or ultraviolet radiation to be reflected of the high refractive index layer, and n2 is the same of the low refractive index layer.

39. The heat ray intercepting light transmissive member as claimed in claim 38, wherein the periodic stack unit comprises the low refractive index layer and the high refractive index layer only.

40. The heat ray intercepting light transmissive member as claimed in claim 37, wherein the stack includes a layer composed of a semiconductor or an insulating material having a refractive index of 3 or above, as the first element reflecting layer.

41. The heat ray intercepting light transmissive member as claimed in claim 40, wherein the first element reflecting layer is a Si layer.

42. The heat ray intercepting light transmissive member as claimed in claim 40, wherein the stack includes a layer comprising any one of SiO₂, BN, AlN, Si₃N₄, Al₂O₃, TiO₂, TiN and CN, as the second element reflecting layer.

43. The heat ray intercepting light transmissive member as claimed in claim 37, wherein the first or second element reflecting layer is a Si layer, and other element reflecting layer adjacent thereto is a SiO₂ layer or a BN layer.

44. The heat ray intercepting light transmissive member as claimed in claim 37, wherein the number of periodicity of formation of the periodic stack unit is 5 or less.

45. The heat ray intercepting light transmissive member as claimed in claim 29, wherein the base is composed of a glass material at least in a portion thereof including a contact surface with the heat ray reflecting material layer.

46. The heat ray intercepting light transmissive member as claimed in claim 29, wherein the base is formed in a plate form, and used as a lighting section forming member for buildings or vehicles.

47. The heat ray intercepting light transmissive member as claimed in claim 46, wherein the base comprises a glass plate, and is used as a window glass.

48. The heat ray intercepting light transmissive member as claimed in claim 29, used as being attached to the buildings or vehicles so as to cover a base lighting member having transparent properties to heat ray and visible light, and provided on the building or vehicle side, and is arranged as being variable in ratio of heat ray intercepting area over the base lighting member by the heat ray reflecting material layer, by varying a mode of arrangement of the base with respect to the base lighting member.

49. A visible light reflecting member for reflecting visible light in a specific wavelength region in the visible wavelength band,

having a stack comprising a plurality of periodic structural bodies in which two or more types of media differing in refractive index to the visible light are periodically arranged, as being formed on a base, and the periodic structural bodies are adjusted in the thickness of a single period so as to show a behavior as a linear photonic crystal to the visible light.

50. The visible light reflecting member as claimed in claim 49, wherein the stack comprises a single periodic structural body stacked on the base.

51. The visible light reflecting member as claimed in claim 49, wherein the periodic structural body has two types of media differing in refractive index to the visible light periodically arranged therein.

52. The visible light reflecting member as claimed in claim 49, wherein, of the individual medium composing a single period of the periodic structural body, difference between refractive indices of a medium having the largest refractive index to the visible light and a medium having the smallest refractive index is adjusted to 1.0 or above.

53. The visible light reflecting member as claimed in claim 49, wherein, of the individual medium composing a single period of the periodic structural body, a medium having the largest refractive index to the visible light has a refractive index of 3.0 or above.

54. The visible light reflecting member as claimed in claim 53, wherein the medium having a refractive index to the visible light of 3.0 or above is composed of Si.

55. The visible light reflecting member as claimed in claim 49, wherein, of the individual medium composing a single period of the periodic structural body, the medium having the smallest refractive index to the visible light is composed of any one of SiO₂, CeO₂, ZrO₂, MgO, Sb₂O₃, BN, AlN, Si₃N₄ and Al₂O₃.

56. The visible light reflecting member as claimed in claim 52, wherein, of the individual medium composing a single period of the periodic structural body, the medium having the largest refractive index to the visible light is composed of Si, and the medium having the smallest refractive index is composed of SiO₂.

57. The visible light reflecting member as claimed in claim 49, wherein the visible light corresponds to the entire wavelength range of the visible wavelength band.

58. The visible light reflecting member as claimed in claim 57, wherein the stack comprises a single periodic structural body stacked on the base, the periodic structural body having two types of media differing in refractive index to the visible light periodically arranged therein, one of these two media being composed of Si, and the other being composed of SiO₂.

59. A reflecting mirror for light exposure apparatus used as a multi-layered-film reflecting mirror for at least either one of a mask pattern layer, a lighting optical system and a projection optical system composing a light exposure apparatus which irradiates a first base having a mask pattern layer which serves as a mask pattern formed thereon with exposure light obtained from a light source, through the lighting optical system, to thereby transfer an image of the mask pattern through a projection optical system onto a second base in a shrunk manner,

and having a stack comprising a plurality of periodic structural bodies in which two or more types of media differing in refractive index to the exposure light are periodically arranged, as being formed on a base, and the periodic structural bodies are adjusted in the thickness of a single period so as to show a behavior as a linear photonic crystal to the exposure light.

60. The reflecting mirror for light exposure apparatus as claimed in claim 59, wherein thickness of a single period of the periodic structural body corresponds to one wavelength or a half wavelength of an average in-medium wavelength obtained by averaging in-medium wavelengths of the exposure light in the individual media composing a single period.

61. The reflecting mirror for light exposure apparatus as claimed in claim 59, wherein, of the individual media composing a single period of the periodic structural body, thickness of a layer having the largest refractive index to the exposure light is designed so as to be at least smaller than that of a layer having the smallest refractive index to the exposure light.

62. The reflecting mirror for light exposure apparatus as claimed in claim 59, wherein the stack comprises a single periodic structural body stacked on the base.

63. The reflecting mirror for light exposure apparatus as claimed in claim 59, wherein the periodic structural body has two types of media differing in refractive index to the exposure light periodically arranged therein.

64. The reflecting mirror for light exposure apparatus as claimed in claim 59, wherein wavelength of the exposure light is at least 500 nm or shorter.

65. A light exposure apparatus configured as having a reflecting mirror for light exposure apparatus as claimed in claim 59.

66. A semiconductor device having element patterns formed using the light exposure apparatus as claimed in claim 65.

67. A vertical annealing apparatus having a vertical reaction tube, a wafer boat on which a plurality of wafers are loaded in parallel, a heat retaining cylinder for supporting the wafer boat, a heater surrounding the side portion of the reaction tube, a side heat insulator surrounding the heater, and an upper heat insulator placed on the top of the reaction tube;

wherein

the apparatus being configured so as to dispose a heat ray reflector for reflecting heat ray in a specific wavelength band at least at either position of the heat retaining cylinder and the upper heat insulator, the heat ray reflector being configured in a form of a stack comprising a plurality of element reflecting layers having transparent properties to the heat ray on the surface of the base, in which every adjacent two element reflecting layers are composed of a combination of materials having refractive indices to the heat ray which differ from each other by 1.1 or more.

68. The vertical annealing apparatus as claimed in claim 67, wherein a specific wavelength band of the heat ray falls in a range from 1 to 10 μ

m.

69. The vertical annealing apparatus as claimed in claim 67, wherein the stack includes a first and second element reflecting layers differing in refractive index and adjacent to each other, and a periodic stack unit including the first and second element reflecting layers are formed in the number of periodicity of 2 or more on the surface of a base.

70. The vertical annealing apparatus as claimed in claim 69, wherein the first element reflecting layer is a Si layer.

71. The vertical annealing apparatus as claimed in claim 69, wherein the second element reflecting layer is a SiO₂ layer.

72. The vertical annealing apparatus as claimed in claim 67, wherein the base is a silicon substrate or a quartz substrate.

73. The vertical annealing apparatus as claimed in claim 69, wherein the number of periodicity of formation of the periodic stack unit is 5 or less.

74. The vertical annealing apparatus as claimed in claim 67, wherein the heat ray reflector is arranged as being encapsulated in a vacuum container composed of a material having transparent properties to the heat ray.