Post-deposition treatment to enhance properties of Si-O-C low K films

• US 20050070128A1
• Filed: 11/15/2004
• Published: 03/31/2005
• Est. Priority Date: 08/17/1999
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Xia, Li-Qun, Gaillard, Frederic, Yieh, Ellie, Lim, Tian H.
• Granted Patent: US 7,326,657 B2
• Time in Patent Office: Days
• US Class Current: 438/789
• CPC Class Codes: C23C 16/0218 in a reactive atmosphere C23C16/0227 takes precedence
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: C23C 16/56 After-treatment
• CPC Class Codes: H01L 21/02071 the processing being a delineation, e.g. RIE, of conductive layers
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02203 the layer being porous
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/02312 treatment by exposure to a gas or vapour
• CPC Class Codes: H01L 21/02337 treatment by exposure to a gas or vapour
• CPC Class Codes: H01L 21/0234 treatment by exposure to a plasma
• CPC Class Codes: H01L 21/02362 formation of intermediate layers, e.g. capping layers or diffusion barriers
• CPC Class Codes: H01L 21/3105 After-treatment
• CPC Class Codes: H01L 21/3146 Carbon layers, e.g. diamond-like layers
• CPC Class Codes: H01L 21/31604 Deposition from a gas or vapour H01L21/31691, H01L21/31695 take precedence
• CPC Class Codes: H01L 21/31612 on a silicon body
• CPC Class Codes: H01L 21/31633 Deposition of carbon doped silicon oxide, e.g. SiOC
• CPC Class Codes: H01L 21/76807 for dual damascene structures
• CPC Class Codes: H01L 21/76826 by contacting the layer with gases, liquids or plasmas
• CPC Class Codes: H01L 21/76837 : Filling up the space between adjacent conductive structures; Gap-filling properties of dielectrics
• CPC Class Codes: Y10S 438/931 : Silicon carbide semiconductor

Abstract

A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally takes place in a reducing environment while heating the substrate. The densification treatment is particularly suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.

Claims

1. A method of depositing dielectric material upon a substrate, comprising:

providing the substrate to a deposition chamber;

introducing a process gas in the deposition chamber, the deposition chamber having a first pressure during a first time period while depositing a carbon-doped silicon oxide layer; and

maintaining the process gas in the deposition chamber, the deposition chamber having a second pressure for a second time period while depositing the carbon-doped silicon oxide layer, wherein the first pressure is higher than the second pressure.

2. The method of claim 1 wherein the process gas comprises an organosilane precursor.

3. The method of claim 2 wherein the organosilane precursor is selected from the group consisting of methylsilane, dimethylsilane, trimethylsilane, tetramethylsilane, and phenylmethlsilane.

4. The method of claim 1 wherein the process gas comprises trimethylsilane, oxygen, and helium.

5. The method of claim 4 wherein the process gas further comprises ozone.

6. The method of claim 1 wherein the first pressure is about 200 to 700 Torr.

7. The method of claim 6 wherein the second pressure is about 50 to 150 Torr.

8. The method of claim 1 wherein the first pressure is about 200 Torr and the second pressure is about 100 Torr.