High dielectric constant metal oxide gate dielectrics
First Claim
1. A field effect transistor (FET), comprising:
- a metal oxide gate insulator disposed over a substantially intrinsic layer of silicon which overlies a substrate.
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Abstract
A method of forming a dielectric layer suitable for use as the gate dielectric layer of a metal-oxide-semiconductor field effect transistor (MOSFET) includes oxidizing the surface of a silicon substrate, forming a metal layer over the oxidized surface, and reacting the metal with the oxidized surface to form a substantially intrinsic layer of silicon superjacent the substrate, wherein at least a portion of the silicon layer may be an epitaxial silicon layer, and a metal oxide layer superjacent the silicon layer. In a further aspect of the present invention, an integrated circuit includes a plurality of MOSFETs, wherein various ones of the plurality of transistors have metal oxide gate dielectric layers and substantially intrinsic silicon layers subjacent the metal oxide dielectric layers.
93 Citations
26 Claims
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1. A field effect transistor (FET), comprising:
a metal oxide gate insulator disposed over a substantially intrinsic layer of silicon which overlies a substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of forming a dielectric layer, comprising:
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forming an oxide layer on a surface of a substrate;
forming a metal layer over the oxide layer;
forming a capping layer over the metal layer; and
reacting the metal layer with the oxide layer. - View Dependent Claims (9, 10, 11, 12)
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13. A method of forming a dielectric layer, comprising:
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forming an oxide layer on a surface of a substrate;
forming a metal layer over the oxide layer; and
reacting at least a first portion of the metal layer with the oxide layer. - View Dependent Claims (14, 15)
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16. A method of forming a field effect transistor, comprising:
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growing a silicon dioxide layer on a surface of a silicon wafer;
depositing a metal layer superjacent the silicon dioxide layer;
depositing a capping layer superjacent the metal layer;
converting the silicon dioxide layer and the metal layer to an epitaxial silicon layer and a metal oxide layer;
removing the capping layer;
forming a gate electrode over the metal oxide; and
forming source/drain terminals substantially adjacent the gate electrode. - View Dependent Claims (17, 18, 19, 20, 21)
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22. A method of forming a field effect transistor, comprising:
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growing a silicon dioxide layer on a surface of a silicon wafer;
depositing a metal layer superjacent the silicon dioxide layer;
converting the silicon dioxide layer and the metal layer to an epitaxial silicon layer and a metal oxide layer;
forming a gate electrode over the metal oxide; and
forming source/drain terminals substantially adjacent the gate electrode. - View Dependent Claims (23, 24, 25, 26)
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Specification