Method of manufacturing a semiconductor device
First Claim
1. A method of manufacturing a semiconductor device comprising:
- forming a semiconductor on an insulating surface;
forming a first insulating film on the semiconductor;
forming a gate electrode on the first insulating film;
doping the semiconductor with an impurity element that gives one conductivity type to form a first impurity region;
doping the semiconductor with an impurity element that gives an opposite conductivity type using a mask formed on the semiconductor in order to form a second impurity region in the semiconductor;
forming a second insulating film on the first and second impurity regions;
forming contact holes in the second insulating film so that the contact holes reach the first and second impurity regions;
forming a metal film so as to cover the contact holes;
forming from the metal film wiring lines that are connected to the first and second impurity regions, and then removing a part of the metal film; and
forming an amorphous semiconductor to be brought into contact with the first and second impurity regions where the metal film is removed, wherein the amorphous semiconductor is a photoelectric conversion layer of the photoelectric conversion element.
0 Assignments
0 Petitions
Accused Products
Abstract
The number of masks is reduced in a method of manufacturing a semiconductor device that has a transistor and a photoelectric conversion element on an insulating surface. In a manufacturing method of the present invention, semiconductor layers functioning as a source region, a drain region, and a channel formation region of a transistor are formed at the same time an n type semiconductor layer and p type semiconductor layer of a photoelectric conversion element are formed. Connection wiring lines to be electrically connected to the n type semiconductor layer and p type semiconductor layer of the photoelectric conversion element are formed at the same time a source wiring line and a drain wiring line of a transistor are formed. In a doping step using an impurity element that gives one conductivity type, a semiconductor layer of an n-channel transistor and the n type semiconductor layer of the photoelectric conversion element are simultaneously doped with the impurity element and a semiconductor layer of a p-channel transistor and the p type semiconductor layer of the photoelectric conversion element are simultaneously doped with the impurity element.
-
Citations
2 Claims
-
1. A method of manufacturing a semiconductor device comprising:
-
forming a semiconductor on an insulating surface;
forming a first insulating film on the semiconductor;
forming a gate electrode on the first insulating film;
doping the semiconductor with an impurity element that gives one conductivity type to form a first impurity region;
doping the semiconductor with an impurity element that gives an opposite conductivity type using a mask formed on the semiconductor in order to form a second impurity region in the semiconductor;
forming a second insulating film on the first and second impurity regions;
forming contact holes in the second insulating film so that the contact holes reach the first and second impurity regions;
forming a metal film so as to cover the contact holes;
forming from the metal film wiring lines that are connected to the first and second impurity regions, and then removing a part of the metal film; and
forming an amorphous semiconductor to be brought into contact with the first and second impurity regions where the metal film is removed, wherein the amorphous semiconductor is a photoelectric conversion layer of the photoelectric conversion element.
-
-
2-26. -26. (cancelled).
Specification