Method of manufacturing a semiconductor device

• US 20050106786A1
• Filed: 11/12/2004
• Published: 05/19/2005
• Est. Priority Date: 11/14/2003
• Status: Abandoned Application

• Current Assignee: Renesas Technology Corporation (Renesas Electronics Corporation)
• Original Assignee: Renesas Technology Corporation (Renesas Electronics Corporation)
• Inventors: Nishita, Takafumi, Shimizu, Fukumi, Kuratomi, Bunshi
• Application Number:
  US10/985,945
• Publication Number:
  US 20050106786A1
• Time in Patent Office: Days
• US Class Current: 438/127
• CPC Class Codes: H01L 21/561 Batch processing
• CPC Class Codes: H01L 21/565 Moulds
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/85 using a wire connector
• CPC Class Codes: H01L 2224/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 23/3121 a substrate forming part of the encapsulation
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01041 : Niobium [Nb]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/207 : Diameter ranges

Abstract

The delivery times of semiconductor devices are shortened. The upper die of a mold is provided with an opening which runs from the outside surface of the upper die to the cavity. A movable cavity piece is installed by fitting the movable cavity piece into the opening so that the movable cavity piece can be moved up and down. In the molding process, the height of the lower face of the movable cavity piece is adjusted in accordance with the thickness of a blanket sealing body, and then sealing resin is injected into the cavity. Thus, a change in the thickness of the blanket sealing body can be easily coped with in a short time. After molding, the movable cavity piece is moved up and separated from the blanket sealing body, and thereby mold release is carried out.

Claims

1. A method of manufacturing a semiconductor device, comprising the steps of:

(a) preparing a substrate;

(b) mounting semiconductor chips over the substrate;

(c) placing the substrate, over which the semiconductor chips are mounted, over the molding surface of the lower die of a mold;

(d) clamping and holding the substrate between the lower die and the upper die of the mold;

(e) filling the cavity in the mold with sealing resin to form a sealing body; and

(f) releasing the substrate from the mold after the step (e),

wherein the upper die has an opening which runs from the outside surface of the upper die to the cavity, and a movable block fit into the opening so that the movable block is movable in the direction intersecting the molding surface of the upper die, and

wherein the size of the lower face of the movable block is equal to or larger than the size of the product area of the substrate and smaller than the size of the upper face of the cavity.

2. The method of manufacturing a semiconductor device according to claim 1,

wherein a projected portion is formed inside the peripheral portion of the upper face of the sealing body.

3. The method of manufacturing a semiconductor device according to claim 1,

wherein a recessed portion is formed inside the peripheral portion of the upper face of the sealing body.

4. The method of manufacturing a semiconductor device according to claim 1,

wherein blocks for adjusting an amount of movement of the movable block are detachably provided outside the cavity in the mold.

5. The method of manufacturing a semiconductor device according to claim 1,

wherein the step (f) includes the steps of moving up the movable block with the peripheral portion of the product area of the sealing body and the substrate being clamped between the upper die and the lower die, and separating the movable block from the sealing body.

6. The method of manufacturing a semiconductor device according to claim 1, comprising a step of:

prior to the step (e) , adjusting the amount of movement of the movable block in accordance with a thickness demanded of the sealing body.

7. A method of manufacturing a semiconductor device, comprising the steps of:

(a) preparing a substrate having a product area in which a plurality of unit product areas are disposed;

(b) mounting a semiconductor chip in each of a plurality of the unit product areas;

(c) placing the substrate, over which a plurality of the semiconductor chips are mounted, over the molding surface of the lower die of a mold;

(d) clamping and holding the substrate between the lower die and the upper die of the mold;

(e) filling the cavity in the mold with sealing resin to form a blanket sealing body which seals a plurality of the semiconductor chips in the product area in a lump; and

(f) releasing the substrate from the mold after the step (e),

wherein the upper die has an opening which runs from the outside surface of the upper die to the cavity, and a movable-block fit into the opening so that the movable block is movable in the direction intersecting the molding surface of the upper die, and

wherein the size of the lower face of the movable block is equal to or larger than the size of the product area of the substrate and smaller than the size of the upper face of the cavity.

8. The method of manufacturing a semiconductor device according to claim 7,

wherein a projected portion is formed inside the peripheral portion of the upper face of the blanket sealing body.

9. The method of manufacturing a semiconductor device according to claim 7,

wherein a recessed portion is formed inside the peripheral portion of the upper face of the blanket sealing body.

10. The method of manufacturing a semiconductor device according to claim 7,

wherein blocks for adjusting the amount of movement of the movable block are detachably provided outside the cavity in the mold.

11. The method of manufacturing a semiconductor device according to claim 7, comprising a step of:

after the step (f), cutting the blanket sealing body and the substrate into a plurality of the unit product areas.

12. The method of manufacturing a semiconductor device according to claim 7, comprising a step of:

after the step (f), forming bump electrodes over the rear face of the substrate and then cutting the blanket sealing body and the substrate into a plurality of the unit product areas.

13. The method of manufacturing a semiconductor device according to claim 7,

wherein the step (f) includes the steps of moving up the movable block with the peripheral portion of the product area of the blanket sealing body and the substrate being clamped between the upper die and the lower die, and separating the movable block from the blanket sealing body.

14. The method of manufacturing a semiconductor device according to claim 7, comprising a step of:

prior to the step (e), adjusting the amount of movement of the movable block in accordance with a thickness demanded of the blanket sealing body in the product area.