Monochromator mirror for the euv-spectral range

• US 20050128571A1
• Filed: 02/21/2003
• Published: 06/16/2005
• Est. Priority Date: 02/25/2002
• Status: Active Grant

• Current Assignee: Fraunhofer Gesellschaft Zur Foerderung Der Angewandten Forsching E.V.
• Original Assignee: Fraunhofer Gesellschaft Zur Foerderung Der Angewandten Forsching E.V.
• Inventors: Kuhlmann, Thomas, Yulin, Sergey, Kaiser, Norbert, Feigl, Torsten
• Granted Patent: US 7,173,759 B2
• Time in Patent Office: Days
• US Class Current: 359/359
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: G02B 5/0891 Ultraviolet [UV] mirrors apparatus for microlithography exposure G03F7/70; X-ray multilayer structures G21K1/06
• CPC Class Codes: G21K 1/062 Devices having a multilayer structure

Abstract

The invention relates to a monochromator mirror for the EUV-spectral range, provided with a layer arrangement placed on a substrate, comprising a periodic sequence of two individual layers (A, B) made of different material forming a period having a thickness d in the form of a spacer-layer or an absorber-layer, whereby the reflectivity of the second or a higher Bragg-order is used. Said thickness d has a dimensional deviation of a maximum of 3% and the ratio of the layer thickness of the absorber-layer to the period thickness is smaller than the ratio of 0.8 of the used order of the Bragg-Reflexion.

Claims

1. A monochromator mirror for the EUV spectral range having a layer arrangement applied to a substrate and which has a sequence of individual layers, wherein the layer arrangement has a periodic sequence of two individual layers A and B of different materials forming one period with the period thickness d and having the particular layer thickness d_A and d_B, so that the following applies:

0.97 (d_A+d_B)≦

d≦

(d_A+d_B)1.03 where
(n_Ad_A+n_Bd_B)*cos(θ

)=m*λ

/2,

wherein n_A and n_B are the real parts of the complex refractive indices of the materials of the individual layers A and B, m is a whole number representing the order of Bragg reflection greater than or equal to 2 and λ

is the wavelength of the incident radiation and θ

is the angle of incidence of the incident radiation, and wherein also the following applies for the layer thickness ratio Γ

=d_A/d;

Γ

<

0.8/m.

2. The monochromator mirror according to claim 1, wherein the following applies for the layer thickness ratio Γ

=d_A/d;

Γ

<

0.5m.

3. The monochromator mirror according to claim 1, wherein the materials of the individual layers A and B are molybdenum and silicon.

4. The monochromator mirror according to claim 1, wherein it has so many periods that the penetration depth of the incident radiation is utilized to the maximum extent for achieving optimum reflectivity.