Semiconductor device having capacitors for reducing power source noise

• US 20050151252A1
• Filed: 02/25/2005
• Published: 07/14/2005
• Est. Priority Date: 12/15/2000
• Status: Active Grant

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Renesas Technology Corporation (Renesas Electronics Corporation)
• Inventors: Baba, Shinji, Watanabe, Masaki
• Granted Patent: US 7,233,065 B2
• Time in Patent Office: Days
• US Class Current: 257/738
• CPC Class Codes: H01L 2224/02371 connecting the bonding area on a surface of the semiconductor or solid-state body with another surface of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/02372 connecting to a via connection in the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05548 Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/0557 the external layer being disposed on a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/13024 the bump connector being disposed on a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/16145 the bodies being stacked
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32145 the bodies being stacked
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/451 with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73204 the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/73253 Bump and layer connectors
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2225/0651 Wire or wire-like electrical connections from device to substrate
• CPC Class Codes: H01L 2225/06513 : Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06517 : Bump or bump-like direct electrical connections from device to substrate
• CPC Class Codes: H01L 2225/06527 : Special adaptation of electrical connections, e.g. rewiring, engineering changes, pressure contacts, layout
• CPC Class Codes: H01L 2225/06541 : Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV] manufacturing via connections per se H01L21/76898
• CPC Class Codes: H01L 2225/06551 : Conductive connections on the side of the device
• CPC Class Codes: H01L 23/3128 : the substrate having spherical bumps for external connection
• CPC Class Codes: H01L 23/36 : Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks H01L23/28, H01L23/40, H01L23/42, H01L23/44, H01L23/46 take precedence; heating H01L23/345
• CPC Class Codes: H01L 23/481 : Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 23/49816 : Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
• CPC Class Codes: H01L 23/49838 : Geometry or layout
• CPC Class Codes: H01L 23/50 : for integrated circuit devices, e.g. power bus, number of leadsH01L23/482 - H01L23/498 take precedence
• CPC Class Codes: H01L 23/535 : including internal interconnections, e.g. cross-under constructions internal lead connections H01L23/481
• CPC Class Codes: H01L 23/552 : Protection against radiation, e.g. light or electromagnetic waves
• CPC Class Codes: H01L 23/66 : High-frequency adaptations
• CPC Class Codes: H01L 24/02 : Bonding areas on insulating substrates, e.g. chip carriers, H01L23/49816, H01L23/49838, H01L23/5389; Manufacturing methods related thereto
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 25/0655 : the devices being arranged next to each other
• CPC Class Codes: H01L 25/0657 : Stacked arrangements of devices
• CPC Class Codes: H01L 25/16 : the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/00015 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed as prior art
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/16152 : Cap comprising a cavity for hosting the device, e.g. U-shaped cap
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19103 : interposed between the semiconductor or solid-state device and the die mounting substrate, i.e. chip-on-passive
• CPC Class Codes: H01L 2924/19104 : on the semiconductor or solid-state device, i.e. passive-on-chip
• CPC Class Codes: H01L 2924/19105 : in a side-by-side arrangement on a common die mounting substrate
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: Y10S 257/924 : with passive device, e.g. capacitor, or battery, as integral part of housing or housing element, e.g. cap

Abstract

A semiconductor device comprises a BGA substrate having one principal plane furnished with a large number of solder balls, the solder balls constituting a ball grid array; a semiconductor chip mounted on another principal plane of the BGA substrate, the semiconductor chip being electrically connected to the BGA substrate by metal wires; and chip capacitors mounted on the semiconductor chip to reduce power source noise.

Claims

1. A semiconductor device comprising:

a BGA substrate having one principal plane furnished with a large number of solder balls, said solder balls constituting a ball grid array;

a semiconductor chip mounted on another principal plane of said BGA substrate, said semiconductor chip being electrically connected to said BGA substrate by metal wires; and

chip capacitors mounted on said semiconductor chip to reduce power source noise.

5. The semiconductor device according to claim 1, further comprising:

a conductive radiator attached to said another principal plane of said BGA substrate, said conductive radiator covering said semiconductor chip; and

a shield plane incorporated in said BGA substrate, said shield plane constituting a shield of said semiconductor chip in combination with said conductive radiator;

wherein said conductive radiator and said shield plane are connected to ground potential.

8. The semiconductor device according to claim 5, further comprising a radiating fin attached to an external surface of said conductive radiator.

2-4. -4. (canceled)

6-7. -7. (canceled)

9. (canceled)

10. A semiconductor device comprising:

a semiconductor chip including bumps and active regions, said bumps serving as electrodes and being formed on one principal plane of said semiconductor chip, said active region being formed on the opposite side as said bumps;

wherein chip capacitors can be attached to said active regions of said semiconductor chip, and said chip capacitors are served to reduce power source noise.

11. The semiconductor device according to claim 10, further comprising a BGA substrate having one principal plane furnished with a large number of solder balls, said solder balls constituting a ball grid array;

wherein said semiconductor chip is attached to said one principal plane of said BGA substrate by means of said bumps.

12. The semiconductor device according to claim 10, wherein said semiconductor chip further has through-type via contacts extending from said active regions to a bump mounting surface thereof in said semiconductor chip, and said through-type via contact is served to ensure electrical connection between said active regions and said bumps.

13. The semiconductor device according to claim 10, further comprising:

a system substrate;

a plurality of mounting pads furnished on one principal plane of said system substrate, said plurality of mounting pads being electrically connected to said bumps of said semiconductor chip;

chip capacitors mounted either on said one principal plane of said system substrate or on a back thereof, said chip capacitors serving to reduce power source noise; and

a sealing resin member for sealing said semiconductor chip.

14. The semiconductor device according to claim 13, further comprising a plurality of rework mounting pads furnished on said one principal plane of said system substrate in contiguous to said mounting pads.

15. The semiconductor device according to claim 13,

further comprising a plurality of semiconductor chips layered on said semiconductor chip, each of said layered semiconductor chips including active regions on one surface thereof, bumps on another surface thereof, and a through-type via contacts extending from said one surface to said another surface in said semiconductor chips, said active regions and said bumps being electrically connected through said through-type via contacts.