Plasma chemical vapor deposition system and method for coating both sides of substrate

• US 20050170668A1
• Filed: 01/28/2005
• Published: 08/04/2005
• Est. Priority Date: 01/30/2004
• Status: Abandoned Application

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Tolmachev, Yuri, Park, Young-soo
• Application Number:
  US11/044,278
• Publication Number:
  US 20050170668A1
• Time in Patent Office: Days
• US Class Current: 438/789
• CPC Class Codes: C23C 16/4412 Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
• CPC Class Codes: C23C 16/455 characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• CPC Class Codes: C23C 16/45502 Flow conditions in reaction chamber
• CPC Class Codes: C23C 16/507 using external electrodes, e.g. in tunnel type reactors
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/31612 on a silicon body

Abstract

A plasma chemical vapor deposition system includes a chamber provided with gas injection holes, a gas exhaust unit mounted on the chamber, a substrate holder disposed on a central area of the chamber to support a substrate in a state where both sides of the substrate are exposed, and first and second coils generating induced magnetic fields. The first and second coils are disposed around upper and lower outer circumferences of the chamber, respectively.

Claims

1. A plasma chemical vapor deposition system comprising:

a chamber provided with gas injection holes;

a gas exhaust unit mounted on the chamber;

a substrate holder disposed on a central area of the chamber to support a substrate in a state where both sides of the substrate are exposed; and

first and second coils generating induced magnetic fields, the first and second coils being disposed around upper and lower outer circumferences of the chamber, respectively.

2. The plasma chemical vapor deposition system of claim 1, wherein the substrate holder is disposed enclosing an outer circumference of the substrate holder.

3. The plasma chemical vapor deposition system of claim 2, wherein the gas exhaust unit is provided at an inner circumference with an inner gas exhaust hole through which the gas in the chamber is exhausted and at an outer circumference with an outer exhaust hole connected to a pump.

4. The plasma chemical vapor deposition system of claim 2, wherein the inner gas exhaust hole is formed at least two portions of the inner circumference of the gas exhaust unit, each size of the inner exhaust holes being increased as it goes away from the outer exhaust hole.

5. The plasma chemical vapor deposition system of claim 2, wherein the first and second coils may be formed of one of helical type coils or flat antenna type coils.

6. The plasma chemical vapor deposition system of claim 1, wherein the first and second coils are disposed to be movable along the outer circumference of the chamber so that a distance between the first and second coils can be adjustable.

7. The plasma chemical vapor deposition system of claim 1, wherein the first and second coils are symmetrically disposed with reference to the substrate holder.

8. The plasma chemical vapor deposition system of claim 1, wherein first ends of the first and second coils shares a high frequency generator and second ends of the first and second coils are respectively connected to first and second tuning capacitors.

9. The plasma chemical vapor deposition system of claim 1, wherein the gas injection holes are symmetrically formed on opposing ends of the chamber.

10. A plasma chemical vapor deposition method comprising:

disposing a substrate on a substrate holder in a central area of a chamber provided with a gas injection hole and a gas exhaust hole; and

generating uniform induced magnetic fields on both sides of the substrate by applying high frequency to first and second coils between which the substrate is disposed, thereby forming a uniform thin film on the both sides of the substrate.