Method for forming a trench MOSFET having self-aligned features

  • US 20050191794A1
  • Filed: 04/20/2005
  • Published: 09/01/2005
  • Est. Priority Date: 05/20/2003
  • Status: Active Grant
First Claim
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1. A method of forming a semiconductor device, comprising:

  • forming a plurality of trenches in a silicon layer;

    forming an insulating layer filling an upper portion of each trench; and

    removing exposed silicon from adjacent the trenches to expose an edge of the insulating layer in each trench, the exposed edge of the insulating layer in each trench defining a portion of each contact opening formed between every two adjacent trenches.

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