Display device having photosensor and method of fabricating the same

• US 20050199876A1
• Filed: 02/04/2005
• Published: 09/15/2005
• Est. Priority Date: 02/06/2004
• Status: Abandoned Application

• Current Assignee: Sanyo Electric Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Sanyo Electric Company Limited (Panasonic Holdings Corporation)
• Inventors: Matsumoto, Shoichiro
• Application Number:
  US11/050,452
• Publication Number:
  US 20050199876A1
• Time in Patent Office: Days
• US Class Current: 257/64
• CPC Class Codes: G06F 3/0421 by interrupting or reflecting a light beam, e.g. optical touch-screen
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1229 with different crystal properties within a device or between different devices
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: H10K 59/40 OLEDs integrated with touch screens
• CPC Class Codes: H10K 59/60 OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes

Abstract

When a photosensor was conventionally provided in a display device, separate modules manufactured in separate steps were installed in the same case. However, decreases in the number of parts and in cost could not be achieved, and a compact size and thinning of the display device was not proceeded. A photosensor is realized by a TFT provided on an insulating substrate. Photocurrent caused by incidence of external light onto a TFT when the TFT is turned-off is detected so that the TFT is used as a photosensor. By performing laser-annealing for a semiconductor layer of the photosensor, an average grain size of crystal particles of the semiconductor layer of the photosensor is made larger than those of a crystal particle of a display portion and a light emission element, thereby improving crystal properties. Thus, a generation efficiency of the photocurrent of the photosensor can be increased.

Claims

1. A display device comprising:

a display portion comprising a plurality of pixels, each of the pixels comprising a first thin film transistor comprising a first semiconductor layer, and

a photosensor comprising a second thin film transistor comprising a second semiconductor layer,

wherein a grain size of crystals forming the second semiconductor layer is larger than a grain size of crystals forming the first semiconductor layer.

3. The display device of claim 1 or 2, further comprising an insulating substrate and additional photosensors, wherein each of the pixels further comprises an organic electroluminescent element, the pixels are arranged on the insulating substrate as a matrix, and the photosensor and the additional photosensors are disposed along an edge of the display portion.

4. The display device of claim 3, further comprising a plurality of light emission elements disposed on the insulating substrate along another edge of the display portion so that one of the light emission elements corresponds to one of the photosensors, and a reflection system which reflects light from the light emitting elements, allows the light to pass over the display portion and leads the light to the photosensors.

5. The display device of claim 1, wherein the grain size is provided as an average size of the crystals of the corresponding semiconductor layer observed over an unit area.

2. A display device comprising:

a display portion comprising a plurality of pixels, each of the pixels comprising a first thin film transistor comprising a first semiconductor layer, and

a photosensor comprising a second thin film transistor comprising a second semiconductor layer,

wherein a crystal length in a predetermined direction of crystals forming the second semiconductor layer is longer than a crystal length in the predetermined direction of crystals forming the first semiconductor layer.

6. The display device of claim 2, wherein a total number of grain boundaries in an electric conduction direction of the second semiconductor layer is smaller than a total number of grain boundaries in an electric conduction direction of the first semiconductor layer.

7. A method of fabricating a display device, comprising:

forming an amorphous semiconductor layer on an insulating substrate;

crystallizing the amorphous semiconductor layer so as to form a first semiconductor layer of a first grain size and a second semiconductor layer of a second grain size that is larger than the first grain size;

forming a first thin film transistor comprising the first semiconductor layer;

forming a photosensor comprising a second thin film transistor comprising the second semiconductor layer; and

forming a pixel comprising the first thin film transistor in a display portion of the display device.

9. The method of claim 7 or 8, wherein the amorphous semiconductor layer is crystallized by laser radiation.

10. The method of claim 7, wherein the first and second grain sizes are provided as an average size of the crystals of the corresponding semiconductor layer observed over an unit area.

11. The method of claim 7 or 8, further comprising forming, when the pixel is formed, a light emission element comprising same emission components as the pixel of the display portion and disposed at a periphery of the display portion.

12. The method of claim 7 or 8, wherein the first and second semiconductor layers, when the amorphous semiconductor layer is crystallized, each receive different amounts of energy given by laser radiation.

13. The method of claim 12, wherein the different amounts of energy are based on a difference in a total number of times of laser radiation to the corresponding amorphous semiconductor layer.

14. The method of claim 12, wherein the different amounts of energy are based on a difference in a scan speed of a laser during the laser radiation.

15. The method of claim 12, wherein the different amounts of energy are based on a difference in a power of a laser during the laser radiation.

8. A method of fabricating a display device, comprising:

forming an amorphous semiconductor layer on an insulating substrate;

crystallizing the amorphous semiconductor layer so as to form a first semiconductor layer comprising crystals having a first crystal length in a predetermined direction and a second semiconductor layer comprising crystals having a second crystal length in the predetermined direction which is longer than the fist crystal length;

forming a first thin film transistor comprising the first semiconductor layer;

forming a photosensor comprising a second thin film transistor comprising the second semiconductor layer so that an electric conduction of the second thin film transistor is in the predetermined direction; and

forming a pixel comprising the first thin film transistor in a display portion of the display device.