SOI-like structure in a bulk semiconductor substrate and method of forming same

  • US 20050253194A1
  • Filed: 05/17/2004
  • Published: 11/17/2005
  • Est. Priority Date: 05/17/2004
  • Status: Active Grant
First Claim
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1. A method of fabricating an SOI-like structure in a bulk semiconductor substrate, the structure being capable of acting as a semiconductor device site, the atoms of the substrate being capable of self-organized migration when the substrate is exposed to a heated deoxidizing atmosphere, comprising:

  • forming a trench in the substrate, a wall of the trench defining a side of a device site and having an upper portion extending downwardly from the free surface of the substrate and a lower portion extending upwardly from the bottom of the trench; and

    annealing only the lower trench wall portion in a heated deoxidizing atmosphere and thereby effecting self-organized migration of the atoms thereof to transform the lower trench wall portion into a void communicating with the upper portion of the trench and extending under the device site.

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