PROCESS FOR INTERFACIAL ADHESION IN LAMINATE STRUCTURES THROUGH PATTERNED ROUGHING OF A SURFACE

• US 20050277266A1
• Filed: 06/14/2004
• Published: 12/15/2005
• Est. Priority Date: 06/14/2004
• Status: Active Grant

• Current Assignee: Alsephina Innovations Inc. (Quarterhill Inc. (f/k/a Wi-LAN Inc.))
• Original Assignee: International Business Machines Corporation
• Inventors: McGahay, Vincent, Shaw, Thomas M, Cooney, Edward C. III, Stamper, Anthony K., Colburn, Matthew E.
• Granted Patent: US 7,303,994 B2
• Time in Patent Office: Days
• US Class Current: 438/455
• CPC Class Codes: H01L 21/31144 using masks
• CPC Class Codes: H01L 21/76828 thermal treatment
• CPC Class Codes: H01L 21/76829 characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
• CPC Class Codes: H01L 21/78 with subsequent division of the substrate into plural individual devices cutting to change the surface-physical characteristics or shape of semiconductor bodies H01L21/304

Abstract

The present invention relates to a process for improved interfacial adhesion of dielectrics using patterned roughing. Improved adhesion strength between layers and substrates can be achieved through increasing the roughness of the interface between the materials. Roughness may including any disturbance of an otherwise generally smooth surface, such as grooves, indents, holes, trenches, and/or the like. Roughing on the interface may be achieved by depositing a material on a surface of the substrate to act as a mask and then using an etching process to induce the roughness. The material, acting as a mask, allows etching to occur on a fine, or sub-miniature, scale below the Scale achieved with a conventional photo mask and lithography to achieve the required pattern roughing. Another material is then deposited on the roughened surface of the substrate, filling in the roughing and adhering to the substrate.

Claims

1. A process for joining surfaces of material comprising the steps of:

providing a substrate having a first surface;

creating a roughing on the first surface of the substrate; and

depositing a material having a second surface on the first surface such that the second surface of the material is joined to the first surface of the substrate and substantially fills in the roughing.

2. The process according to claim 1, where one of the substrate and the material is a dielectric material.

3. The process according to claim 1, wherein creating the roughing further comprises:

applying a mask;

etching the first surface using the mask; and

removing the mask.

4. The process according to claim 3, where the mask is a fine scale photo mask and the etching is performed using a lithographic process.

5. The process according to claim 1, wherein the creating step comprises:

applying a block copolymer solution having at least two phases to the first surface of the substrate;

annealing the block copolymer solution; and

removing at least one phase of the block copolymer solution.

6. The process according to claim 1, wherein the creating step comprises:

applying a film containing metal deposition to the first surface of the substrate; and

annealing the film to form metal islands.

7. The process according to claim 1, wherein the creating step comprises:

applying a photo-resist material comprising porogen to the first surface of the substrate; and

applying heat to the photo-resist material to burnout the porogen.

8. The process according to claim 1, wherein the creating step comprises:

applying a spin on film with metal particles to the first surface of the substrate; and

applying heat to remove the film, thereby leaving the metal particles on the first surface of the substrate.

9. A structure having improved interfacial adhesion between a first and a second surface comprising:

a first material having a patterned surface; and

a second material having a complimentary patterned surface, where the patterned surface and the complimentary patterned surface are interleaved providing an adhered interface.

10. The structure according to claim 9, where:

the first material has a first surface which has been roughened and results in the pattern on the first surface; and

a second material has a second surface, where the second surface of the second material is joined to the first surface of the first material such that second material fills in the pattern of the first surface.

11. The structure according to claim 9, where at least one of the first substrate and the second substrate is a dielectric material.

12. The structure according to claim 9, wherein the pattern comprises at least one of holes, trenches, grooves, and indents.

13. A process for joining layers comprising the steps of:

providing a first substrate having a first surface;

depositing a layer on the first surface of the first substrate;

perforating the layer with a plurality of holes such that the first surface of the first substrate is accessible through at least one of the holes in the layer; and

depositing a second substrate having a second surface on the perforated capping layer, such that the second surface of the second substrate is joined to the first surface of the substrate, and the deposited second substrate fills in the holes of the layer.

14. The process according to claim 13, wherein one of the first substrate and the second substrate is a dielectric material.

15. The process according to claim 14, wherein perforating the layer further comprises:

applying a mask to the layer; and

etching the layer using the mask.

16. The process according to claim 15, wherein the mask is a fine scale photo mask and the etching is performed using a lithographic process.

17. The process according to claim 13, wherein the step of perforating the layer comprises:

applying a block copolymer solution having at least two phases to the layer;

annealing the block copolymer solution; and

removing at least one phase of the block copolymer solution.

18. The process according to claim 13, wherein the step of perforating the layer comprises:

applying a film containing metal deposition to the layer;

and

annealing the film to form metal islands.

19. The process according to claim 13, wherein the step of perforating the layer comprises:

applying a photo-resist material comprising porogen to the layer; and

applying heat to the photo-resist material to burnout the porogen.

20. The process according to claim 13, wherein the step of perforating the layer comprises:

applying a spin on film with metal particles to the layer; and

applying heat to remove the film, thereby leaving the metal particles on the layer.

21. The process according to claim 13, wherein the layer contains a porogen, and perforating the layer to form holes further comprises applying heat to the layer to burn out the porogen.