Semiconductor encapsulating epoxy resin Composition and semiconductor device

• US 20060025501A1
• Filed: 08/01/2005
• Published: 02/02/2006
• Est. Priority Date: 08/02/2004
• Status: Active Grant

• Current Assignee: Shin-Etsu Chemical Company Limited
• Original Assignee: Shin-Etsu Chemical Company Limited
• Inventors: Nakayama, Eiji, Osada, Shoichi
• Granted Patent: US 7,999,016 B2
• Time in Patent Office: Days
• US Class Current: 523/457
• CPC Class Codes: C08K 3/013 Fillers, pigments or reinforcing additives
• CPC Class Codes: C08K 3/22 of metals
• CPC Class Codes: C08K 5/5399 Phosphorus bound to nitrogen
• CPC Class Codes: C08L 2666/16 Addition or condensation polymers of aldehydes or ketones according to C08L59/00 - C08L61/00; Derivatives thereof
• CPC Class Codes: C08L 61/04 Condensation polymers of aldehydes or ketones with phenols only
• CPC Class Codes: C08L 63/00 Compositions of epoxy resins; Compositions of derivatives of epoxy resins
• CPC Class Codes: C08L 85/02 containing phosphorus
• CPC Class Codes: H01L 23/293 Organic, e.g. plastic
• CPC Class Codes: H01L 23/295 containing a filler H01L23/296 takes precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: Y10T 428/31511 Of epoxy ether

Abstract

Epoxy resin compositions comprising (A) an epoxy resin, (B) a phenolic resin curing agent, (C) an inorganic filler, (D) a rare earth oxide, and optionally (E) a phosphazene compound cure into products having improved heat resistance and moisture-proof reliability and are best suited for the encapsulation of semiconductor devices.

Claims

1. A semiconductor encapsulating epoxy resin composition comprising

(A) an epoxy resin,

(B) a phenolic resin curing agent in an amount to provide 0.5 to 1.5 moles of phenolic hydroxyl groups per mole of epoxy groups in the epoxy resin (A),

(C) an inorganic filler in an amount of 400 to 1,200 parts by weight per 100 parts by weight of components (A) and (B) combined, and

(D) a rare earth oxide in an amount of 0.5 to 20 parts by weight per 100 parts by weight of components (A) and (B) combined.

2. The epoxy resin composition of claim 1 wherein the rare earth oxide (D) is present in an amount of 2 to 10 parts by weight per 100 parts by weight of components (A) and (B) combined.

3. The epoxy resin composition of claim 1 wherein said rare earth oxide (D) is selected from the class consisting of lanthanum oxide, gadolinium oxide, samarium oxide, thulium oxide, europium oxide, neodymium oxide, erbium oxide, terbium oxide, praseodymium oxide, dysprosium oxide, yttrium oxide, ytterbium oxide, holmium oxide and mixtures thereof.

4. The epoxy resin composition of claim 1 further comprising a curing accelerator in an amount of 0.1 to 5 parts by weight per 100 parts by weight of components (A) and (B) combined.

5. The epoxy resin composition of claim 1 further comprising a parting agent in an amount of 0.1 to 5 parts by weight per 100 parts by weight of components (A) and (B) combined.

6. The epoxy resin composition of claim 1 further comprising a silane coupling agent in an amount of 0.1 to 5 parts by weight per 100 parts by weight of components (A) and (B) combined.

13. A semiconductor device encapsulated with the epoxy resin composition of claim 1 in a cured state.

7. A semiconductor encapsulating, flame retardant epoxy resin composition comprising

(A) an epoxy resin,

(B) a phenolic resin curing agent in an amount to provide 0.5 to 1.5 moles of phenolic hydroxyl groups per mole of epoxy groups in the epoxy resin (A),

(C) an inorganic filler in an amount of 400 to 1,200 parts by weight per 100 parts by weight of components (A), (B) and (E) combined,

(D) a rare earth oxide in an amount of 0.5 to 20 parts by weight per 100 parts by weight of components (A), (B) and (E) combined, and

(E) a phosphazene compound of the average compositional formula (1):

wherein X is a single bond or a group selected from among CH₂, C(CH₃)₂, SO₂, S, O, and O(CO)O, Y is OH, SH or NH₂, R¹ is a group selected from among C₁-C₄ alkyl and alkoxy groups, NH₂, NR²R³ and SR⁴, wherein each of R², R³ and R⁴ is a hydrogen atom or C₁-C₄ alkyl group, d, e, f and n are numbers satisfying 0≧

d≧

0.25n, 0≧

e≧

2n, 0≧

f≧

2n, 2d+e+f=2n, and 3≧

n≧

1,000, in an amount of 1 to 50% by weight based on the total weight of components (A), (B) and (E).

8. The epoxy resin composition of claim 7 which is substantially free of bromides and antimony compounds.

9. The epoxy resin composition of claim 7 wherein said rare earth oxide (D) is selected from the class consisting of lanthanum oxide, gadolinium oxide, samarium oxide, thulium oxide, europium oxide, neodymium oxide, erbium oxide, terbium oxide, praseodymium oxide, dysprosium oxide, yttrium oxide, ytterbium oxide, holmium oxide and mixtures thereof.

10. The epoxy resin composition of claim 7 further comprising a curing accelerator in an amount of 0.1 to 5 parts by weight per 100 parts by weight of components (A), (B) and (E) combined.

11. The epoxy resin composition of claim 7 further comprising a parting agent in an amount of 0.1 to 5 parts by weight per 100 parts by weight of components (A), (B) and (E) combined.

12. The epoxy resin composition of claim 7 further comprising a silane coupling agent in an amount of 0.1 to 5 parts by weight per 100 parts by weight of components (A), (B) and (E) combined.

14. A semiconductor device encapsulated with the epoxy resin composition of claim 7 in a cured state.