Integrated circuit employable with a power converter
First Claim
1. An integrated circuit employable with a power converter, comprising:
- a power switch of a power train of said power converter formed on a semiconductor substrate; and
a driver switch of a driver configured to provide a drive signal to said power switch and embodied in a transistor, including;
a gate located over a channel region recessed into said semiconductor substrate, a source/drain including a lightly doped region located adjacent said channel region and a heavily doped region located adjacent said lightly doped region, an oppositely doped well located under and within said channel region, and a doped region, located between said heavily doped region and said oppositely doped well, having a doping concentration profile less than a doping concentration profile of said heavily doped region.
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Accused Products
Abstract
An integrated circuit employable with a power converter. In one embodiment, the integrated circuit includes a power switch of a power train of the power converter formed on a semiconductor substrate. The integrated circuit also includes a driver switch of a driver configured to provide a drive signal to the power switch and embodied in a transistor including a gate located over a channel region recessed into the semiconductor substrate. The transistor also includes a source/drain including a lightly doped region located adjacent the channel region and a heavily doped region located adjacent the lightly doped region. The transistor further includes an oppositely doped well located under and within the channel region. The transistor still further includes a doped region, located between the heavily doped region and the oppositely doped well, having a doping concentration profile less than a doping concentration profile of the heavily doped region.
96 Citations
30 Claims
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1. An integrated circuit employable with a power converter, comprising:
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a power switch of a power train of said power converter formed on a semiconductor substrate; and
a driver switch of a driver configured to provide a drive signal to said power switch and embodied in a transistor, including;
a gate located over a channel region recessed into said semiconductor substrate, a source/drain including a lightly doped region located adjacent said channel region and a heavily doped region located adjacent said lightly doped region, an oppositely doped well located under and within said channel region, and a doped region, located between said heavily doped region and said oppositely doped well, having a doping concentration profile less than a doping concentration profile of said heavily doped region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. An integrated circuit employable with a power converter, comprising:
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a power switch of a power train of said power converter formed on a semiconductor substrate;
a complementary metal oxide semiconductor device employable in a controller configured to provide a signal to control a duty cycle of said power switch and formed on said semiconductor substrate; and
a driver switch of a driver configured to provide a drive signal to said power switch as a function of said signal from said controller and embodied in a laterally diffused metal oxide semiconductor device, including;
a gate located over a channel region recessed into said semiconductor substrate, a source/drain including a lightly doped region located adjacent said channel region and a heavily doped region located adjacent said lightly doped region, an oppositely doped well located under and within said channel region, and a doped region, located between said heavily doped region and said oppositely doped well, having a doping concentration profile less than a doping concentration profile of said heavily doped region. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30)
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Specification