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Insulated gate semiconductor device and method of manufacturing insulated gate semiconductor device

  • US 20060049456A1
  • Filed: 09/01/2005
  • Published: 03/09/2006
  • Est. Priority Date: 09/07/2004
  • Status: Active Grant
First Claim
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1. An insulated gate semiconductor device, comprising:

  • a first region having a gate electrode region and a first insulating film region surrounding the gate electrode region;

    a semiconductor region which includes a channel forming region and is disposed to oppose the gate electrode region with the first insulating film region between the semiconductor region and the gate electrode region; and

    a second region which has a conductor region buried in the semiconductor region not including the channel forming region disposed to oppose the gate electrode region with the first insulating film region between the semiconductor region and the gate electrode region, and has a second insulating film region which separates the conductor region from the semiconductor region.

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