Method of Patterning Surfaces While Providing Greater Control of Recess Anisotropy

• US 20060063387A1
• Filed: 09/21/2004
• Published: 03/23/2006
• Est. Priority Date: 09/21/2004
• Status: Active Grant

• Current Assignee: Mii Newco, Inc.
• Original Assignee: Molecular Imprints, Inc. (Canon Inc.)
• Inventors: Stacey, Nicholas A., Miller, Michael N.
• Granted Patent: US 7,041,604 B2
• Time in Patent Office: Days
• US Class Current: 438/735
• CPC Class Codes: B29C 2043/025 forming a microstructure, i.e. fine patterning
• CPC Class Codes: B29C 43/003 characterised by the choice of material
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: G03F 7/0002 Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
• CPC Class Codes: H01L 21/02118 carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC polymers per se C08G, photoresist per se G03F
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/022 the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides adhesion layers or buffer layers H01L21/02304, H01L21/02362
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/02282 liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
• CPC Class Codes: H01L 21/3081 characterised by their composition, e.g. multilayer masks, materials
• CPC Class Codes: H01L 21/3086 characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/31138 by dry-etching
• CPC Class Codes: H01L 21/31144 using masks
• CPC Class Codes: H01L 21/312 Organic layers, e.g. photoresist H01L21/3105, H01L21/32 take precedence; photoresists per se G03C
• CPC Class Codes: H01L 21/3121 Layers comprising organo-silicon compounds

Abstract

The present invention features a method of patterning a substrate that includes forming, on the substrate, a multi-layer film defining an etch rate interface having a plurality of first portions that having a first etch rate associated therewith. The multi-layer film includes a second portion having a second etch rate associated therewith. Adjacent first portions are separated by the second portion. A pattern is transferred onto the substrate that is defined, in part, by the junction. The difference between the first and second etch rates is selected to minimize bowing of recessed features formed in the pattern.

Claims

1. A method of patterning a substrate, said method comprising:

forming, on said substrate, a multi-layer film defining junction having a plurality of first portions each of which has a first etch rate associated therewith and a second portion having a second etch rate associated therewith, with adjacent first portions being separated by said second portion; and

transferring a pattern defined, in part, by said junction into said substrate, with a difference between said first and second etch rates being selected to minimize bowing of recessed features formed in said pattern.

2. The method as recited in claim 1 further including cooling said substrate to a predetermined temperature below ambient temperature.

3. The method as recited in claim 1 wherein transferring further includes removing said junction employing reducing chemistries.

4. The method as recited in claim 1 wherein transferring further includes sequentially removing said first and second portions uniformly over a volume thereof.

5. The method as recited in claim 1 wherein forming further includes forming said plurality of first portions with a first quantity of silicon and forming said second portion with a second quantity of silicon, differing from said first portion and defining a difference between said first etch rate and second etch rate for a given etch chemistry

6. The method as recited in claim 1 wherein forming further includes forming said plurality of first portions with a quantity of silicon in a range of 2-6% by weight and forming said second portion with a second quantity of silicon at least 10% by weight.

7. The method as recited in claim 1 wherein forming further includes depositing a first layer upon said substrate comprising isobornyl acrylate, n-hexyl acrylate, ethylene glycol diacrylate, 2-hydroxy-2-methyl-1-phenyl-propan-1-one, acryloxymethylpentamethyldisiloxane and a surfactant, and depositing upon said first layer a second layer comprising a hydroxyl-functional polysiloxane, hexamethoxymethylmelamine, toluenesulfonic acid and methyl amyl ketone.

8. The method as recited in claim 7 wherein depositing upon said first layer further includes providing said second layer with gamma-glycidoxypropyltrimethoxysilane.

9. The method as recited in claim 1 wherein forming further includes forming said multi-layer film from a first layer deposited upon said substrate using a deposition process selected from a set of deposition processes consisting essentially of chemical vapor deposition, plasma enhanced chemical vapor deposition, spin coating, atomic layer deposition, and drop dispense imprinting.

10. The method as recited in claim 9 wherein forming further includes forming said multi-layer film from a second layer deposited upon said first layer using a deposition process selected from a set of deposition processes consisting essentially of chemical vapor deposition, plasma enhanced chemical vapor deposition, spin coating, atomic layer deposition, and drop dispense imprinting.

11. The method as recited in claim 9 wherein forming further includes patterning said first layer employing a process selected from a set of processes including spin-coat imprinting and electron beam patterning.

12. The method as recited in claim 1 wherein said substrate includes a featured region, with said multi-layer film being disposed upon said featured region.

13. The method as recited in claim 1 wherein forming further includes forming said multi-layer film with a crown surface and a first film deposited upon said substrate with a plurality of projections, each of which has an apex surface associated therewith, said crown surface being spaced apart from said apex surface, with a variation in a distance between said apex surface of any one of said plurality of projections and said crown surface being within a predetermined range.

14. The method as recited in claim 1 wherein forming further includes forming said multi-layer film with a crown surface and a first film deposited upon said substrate with a plurality of projections extending from a nadir terminating in an apex surface defining a height therebetween, said crown surface being spaced apart from said apex surface, with a variation in a distance between said apex surface of any one of said plurality of projections and said crown surface being less that ½

said height.

15. A method of patterning a substrate, said method comprising:

forming, on said substrate, a multi-layer film defining a junction having a plurality of first portions with a quantity of silicon in a range of 2-6% by weight and a second portion having a second quantity of silicon with at least 10% by weight; and

transferring a pattern into said substrate defined, in part, by said junction.

16. The method as recited in claim 15 further including cooling said substrate to a predetermined temperature below ambient temperature.

17. The method as recited in claim 15 wherein transferring further includes removing said junction employing reducing chemistries.

18. The method as recited in claim 15 wherein transferring further includes sequentially removing said first and second portions uniformly over a volume thereof.

19. The method as recited in claim 15 wherein forming further includes providing said plurality of first portions with a etch rate and said second portion with a second etch rate, differing from said first etch rate for a given etch chemistry.

20. The method as recited in claim 15 wherein forming further includes depositing a first layer upon said substrate comprising isobornyl acrylate, n-hexyl acrylate, ethylene glycol diacrylate, 2-hydroxy-2-methyl-1-phenyl-propan-1-one, acryloxymethylpentamethyldisiloxane and a surfactant, and depositing upon said first layer a second layer comprising a hydroxyl-functional polysiloxane, hexamethoxymethylmelamine, toluenesulfonic acid and methyl amyl ketone.

21. The method as recited in claim 20 wherein depositing upon said first layer further includes providing said second layer with gamma-glycidoxypropyltrimethoxysilane.

22. The method as recited in claim 15 wherein forming further includes forming said multi-layer film from a first layer deposited upon said substrate using a deposition process selected from a set of deposition processes consisting essentially of chemical vapor deposition, plasma enhanced chemical vapor deposition, spin coating, atomic layer deposition, and drop dispense imprinting.

23. The method as recited in claim 22 wherein forming further includes forming said multi-layer film from a second layer deposited upon said first layer using a deposition process selected from a set of deposition processes consisting essentially of chemical vapor deposition, plasma enhanced chemical vapor deposition, spin coating, atomic layer deposition, and drop dispense imprinting.

24. The method as recited in claim 22 wherein forming further includes patterning said first layer employing a process selected from a set of processes including spin-coating imprinting and electron beam patterning.

25. The method as recited in claim 15 wherein said substrate includes a featured region, with said multi-layer film being disposed upon said featured region.

26. The method as recited in claim 15 wherein forming further includes forming said multi-layer film with a crown surface and a first film deposited upon said substrate with a plurality of projections, each of which has an apex surface associated therewith, said crown surface being spaced apart from said apex surface, with a variation in a distance between said apex surface of any one of said plurality of projections and said crown surface being within a predetermined range.

27. The method as recited in claim 15 wherein forming further includes forming said multi-layer film with a crown surface and a first film deposited upon said substrate with a plurality of projections extending from a nadir terminating in an apex surface defining a height therebetween, said crown surface being spaced apart from said apex surface, with a variation in a distance between said apex surface of any one of said plurality of projections and said crown surface being less that ½

said height.

28. A method of patterning a substrate, said method comprising:

forming, on said substrate, a multi-layer film defining junction having a plurality of first portions with a first quantity of silicon providing a first etch rate associated therewith and a second portion with a second quantity of silicon providing a second etch rate associated therewith, with adjacent first portions being separated by said second portion;

cooling said substrate to a predetermined temperature; and

transferring, after cooling, a pattern into said substrate defined, in part, by said junction, with a difference between said first and second etch rates being selected to minimize bowing of recessed features formed in said pattern.

29. The method as recited in claim 28 wherein forming further includes forming said plurality of first portions with said first quantity of silicon being in a range of 2-6% by eight and forming said second portion with said second quantity of silicon being at least 10% by weight.

30. The method as recited in claim 29 wherein forming further includes depositing a first layer upon said substrate comprising isobornyl acrylate, n-hexyl acrylate, ethylene glycol diacrylate, 2-hydroxy-2-methyl-1-phenyl-propan-1-one, acryloxymethylpentamethyldisiloxane and a surfactant, and depositing upon said first layer a second layer comprising hydroxyl-functional polysiloxane, hexamethoxymethylmelamine, toluenesulfonic acid and methyl amyl ketone.

31. The method as recited in claim 30 wherein depositing upon said first layer further includes providing said second layer with gamma-glycidoxypropyltrimethoxysilane.

32. The method as recited in claim 28 wherein transferring further includes removing said junction employing reducing chemistries.

33. The method as recited in claim 28 wherein said substrate includes a featured region, with said multi-layer film being disposed upon said featured region.

34. The method as recited in claim 28 wherein forming further includes forming said multi-layer film with a crown surface and a first film deposited upon said substrate with a plurality of projections, each of which has an apex surface associated therewith, said crown surface being spaced apart from said apex surface, with a variation in a distance between said apex surface of any one of said plurality of projections and said crown surface being within a predetermined range.

35. The method as recited in claim 28 wherein forming further includes forming said multi-layer film with a crown surface and a first film deposited upon said substrate with a plurality of projections extending from a nadir terminating in an apex surface defining a height therebetween, said crown surface being spaced apart from said apex surface, with a variation in a distance between said apex surface of any one of said plurality of projections and said crown surface being less that ½

said height.