Integrated circuit memory system having dynamic memory bank count and page size
First Claim
1. An integrated circuit memory device, comprising:
- a storage array having a first and second row of storage cells; and
a row of sense amplifiers including a first plurality of sense amplifiers and a second plurality of sense amplifiers, coupled to the storage array, to access the first and second rows of storage cells, wherein the integrated circuit memory device is operable in a first mode and second mode of operation, wherein;
during the first mode of operation, a first plurality of data is transferred from the first plurality of storage cells to the row of sense amplifiers, and during the second mode of operation, a second plurality of data is transferred from the first row of storage cells to the first plurality of sense amplifiers and a third plurality of data is transferred from the second row of storage cells to the second plurality of sense amplifiers.
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Abstract
A memory system includes a master device, such as a graphics controller or processor, and an integrated circuit memory device operable in dynamic memory bank count and page size mode. The integrated circuit memory device includes a first and second row of storage cells coupled to a row of sense amplifiers including a first and second plurality of sense amplifiers. During the first mode of operation, a first plurality of data is transferred from the first plurality of storage cells to the row of sense amplifiers. During the second mode of operation, a second plurality of data is transferred from the first row of storage cells to the first plurality of sense amplifiers and a third plurality of data is transferred from the second row of storage cells to the second plurality of sense amplifiers. The second and third plurality of data is accessible simultaneously from the memory device interface during the second mode of operation. In an embodiment, the second plurality of data is transferred from the first half of the first row and the third plurality of data is transferred from the second half of the second row.
86 Citations
35 Claims
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1. An integrated circuit memory device, comprising:
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a storage array having a first and second row of storage cells; and
a row of sense amplifiers including a first plurality of sense amplifiers and a second plurality of sense amplifiers, coupled to the storage array, to access the first and second rows of storage cells, wherein the integrated circuit memory device is operable in a first mode and second mode of operation, wherein;
during the first mode of operation, a first plurality of data is transferred from the first plurality of storage cells to the row of sense amplifiers, and during the second mode of operation, a second plurality of data is transferred from the first row of storage cells to the first plurality of sense amplifiers and a third plurality of data is transferred from the second row of storage cells to the second plurality of sense amplifiers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A memory system comprising:
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a master device; and
an integrated circuit memory device, including;
a storage array having a first and second row of storage cells; and
a row of sense amplifiers including a first plurality of sense amplifiers and a second plurality of sense amplifiers, coupled to the storage array, to access the first and second rows of storage cells, wherein the integrated circuit memory device is operable in a first mode and second mode of operation, wherein;
during the first mode of operation, a first plurality of data is transferred from the first row of storage cells to the row of sense amplifiers, and during the second mode of operation, a second plurality of data is transferred from the first row of storage cells to the first plurality of sense amplifiers and a third plurality of data is transferred from the second row of storage cells to the second plurality of sense amplifiers. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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25. A method for operation of an integrated circuit memory device, comprising:
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transferring a first plurality of data from a first row of storage cells in a first memory bank to a first plurality of sense amplifiers in a plurality of sense amplifiers; and
transferring a second plurality data from a second row of storage cells in the first memory bank to a second plurality of sense amplifiers in the plurality of sense amplifiers. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32, 33)
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34. An integrated circuit memory device, comprising:
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a memory bank having a first and second row of storage cells to store a first and second plurality of data in respective subsets of the first and second rows, respectively; and
means for transferring the first and second plurality of data to a plurality of sense amplifiers, wherein the first and second plurality of data is stored in the plurality of sense amplifiers concurrently. - View Dependent Claims (35)
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Specification