Low basal plane dislocation bulk grown SiC wafers
First Claim
Patent Images
1. A high quality single crystal wafer of SiC having a diameter of at least about 3 inches and at least one continuous square inch of surface area that has a basal plane dislocation density less than about 500 cm−
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Abstract
A high quality single crystal wafer of SiC is disclosed. The wafer has a diameter of at least about 3 inches (75 mm) and at least one continuous square inch (6.25 cm2) of surface area that has a basal plane dislocation volume density of less than about 500 cm−2 for a 4 degree off-axis wafer.
91 Citations
25 Claims
- 1. A high quality single crystal wafer of SiC having a diameter of at least about 3 inches and at least one continuous square inch of surface area that has a basal plane dislocation density less than about 500 cm−
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5. A method of forming a wafer of a high quality single crystal of SiC, the method comprising:
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forming a SiC boule having a diameter slightly larger than 3 inches, and slicing the boule between about 2 and 12 degrees degrees off the 0001 plane into wafers having at least one continuous square inch of surface area that has a basal plane dislocation density of less than about 500 cm−
2 on each wafer. - View Dependent Claims (6, 7, 8, 9)
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10. In a method of producing a high quality bulk single crystal of silicon carbide in a seeded sublimation system, the improvement comprising:
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growing a SiC boule having a diameter of at least about 3 inches and at least one continuous square inch of surface area that has a basal plane dislocation density of less than about 500 cm−
2.slicing the SiC boule into wafers, wherein each wafer has at least one continuous square inch of surface area that has a basal plane dislocation density of less than about 500 cm−
2. - View Dependent Claims (11, 12, 13, 14)
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15. A high quality semiconductor precursor wafer comprising:
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a silicon carbide wafer having a diameter of at least about 3 inches;
said wafer having the 4H polytype; and
said wafer having at least one continuous square inch of surface area that has a basal plane dislocation density on its surface of between about 50 and about 500 cm−
2.
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16. A high quality semiconductor precursor wafer comprising:
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a silicon carbide wafer having a diameter of at least about 3 inches; and
said wafer having at least one continuous square inch of surface area having between about 2,000 and 20,000 basal plane dislocations.
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17. A high quality semiconductor precursor wafer comprising:
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a silicon carbide wafer having a diameter of at least about 3 inches;
said wafer having at least one continuous square inch of surface area having a basal plane dislocation density of less than about 500 cm−
2; and
a Group III-nitride epitaxial layer on said surface of said silicon carbide wafer. - View Dependent Claims (18)
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19. A plurality of semiconductor device precursors comprising:
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a silicon carbide wafer having a diameter of at least about 3 inches and having at least one continuous square inch of surface area with a basal plane dislocation density of less than about 500 cm−
2; and
a plurality of respective Group III-nitride epitaxial layers on some portions of said wafer.
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20. A semiconductor wafer comprising:
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a bulk single crystal silicon carbide substrate of at least about 3 inches and having at least one continuous square inch of surface area with a basal plane dislocation density of less than about 500 cm−
2, said bulk single crystal having respective first and second surfaces opposite one another; and
a plurality of devices on said silicon carbide substrate, each said device comprising;
an epitaxial layer located on the substrate, said layer having a concentration of suitable dopant atoms for making the epitaxial layer a first conductivity type, and respective source, channel, and drain portions;
a metal oxide layer on said channel portion; and
and a metal gate contact on said metal oxide layer for forming an active channel when a bias is applied to said metal gate contact.
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21. A semiconductor wafer comprising:
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a bulk single crystal silicon carbide substrate of at least about 3 inches and having at least one continuous square inch of surface area with a basal plane dislocation density of less than 500 cm−
2, said bulk single crystal having respective first and second surfaces opposite one another; and
a plurality of devices on said silicon carbide substrate, each said device comprising;
a conductive channel on said substrate;
a source and a drain on said conductive channel; and
a metal gate contact between said source and said drain on said conductive channel for forming an active channel when a bias is applied to the metal gate contact.
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22. A semiconductor wafer comprising:
a bulk single crystal silicon carbide substrate of at least about 3 inches and having at least one continuous square inch of surface area with a basal plane dislocation density less than 500 cm−
2, said bulk single crystal having respective first and second surfaces opposite one another.- View Dependent Claims (23, 24, 25)
Specification