Plasma immersion ion implantation process

• US 20060081558A1
• Filed: 01/28/2005
• Published: 04/20/2006
• Est. Priority Date: 08/11/2000
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Ramaswamy, Kartik, Hanawa, Hiroji, Collins, Kenneth S., Nguyen, Andrew, Al-Bayati, Amir, Gallo, Biagio
• Granted Patent: US 7,465,478 B2
• Time in Patent Office: Days
• US Class Current: 216/67
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: Y10S 438/906 Cleaning of wafer as interim step

Abstract

A method of processing a workpiece includes placing the workpiece on a workpiece support pedestal in a main chamber with a gas distribution showerhead, introducing a process gas into a remote plasma source chamber and generating a plasma in the remote plasma source chamber, transporting plasma-generated species from the remote plasma source chamber to the gas distribution showerhead so as to distribute the plasma-generated species into the main chamber through the gas distribution showerhead, and applying plasma RF power into the main chamber.

Claims

1. A method of cleaning a main reactor chamber having a gas distribution showerhead, comprising:

introducing a cleaning species gas into a remote plasma source chamber and generating a plasma in the remote plasma source chamber;

transporting plasma-generated species from said remote plasma source chamber to said gas distribution showerhead so as to distribute said plasma-generated species into said main chamber through said gas distribution showerhead; and

applying plasma power into said main chamber.

2. The method of claim 1 wherein the step of applying plasma power into said main chamber comprises applying plasma bias power.

3. The method of claim 1 wherein the step of applying plasma power into said main chamber comprises applying plasma source power.

4. The method of claim 1 further comprising introducing a non-reactive species gas into said remote plasma source chamber.

5. The method of claim 19 wherein said plasma-generated species comprise at least one of:

radicals, ions, electrons.

6. A method of processing a workpiece, comprising:

placing the workpiece on a workpiece support pedestal in a main chamber with a gas distribution showerhead;

introducing a process gas into a remote plasma source chamber and generating a plasma in the remote plasma source chamber;

transporting plasma-generated species from said remote plasma source chamber to said gas distribution showerhead so as to distribute said plasma-generated species into said main chamber through said gas distribution showerhead; and

applying plasma RF power into said main chamber.

7. The method of claim 6 wherein the step of applying plasma RF power into said main chamber comprises applying plasma RF bias power.

8. The method of claim 6 wherein the step of applying plasma RF power into said main chamber comprises applying plasma RF source power.

9. The method of claim 6 further comprising introducing a non-reactive species gas into said remote plasma source chamber.

10. The method of claim 6 wherein said plasma-generated species comprise at least one of:

radicals, ions, electrons.

11. The method of claim 6 wherein the step of applying plasma RF power comprises applying pulsed RF power.

12. The method of claim 7 wherein the step of applying plasma RF bias power comprises applying pulsed RF bias power.