RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor

  • US 20060088655A1
  • Filed: 10/23/2004
  • Published: 04/27/2006
  • Est. Priority Date: 10/23/2004
  • Status: Active Grant
First Claim
Patent Images

1. A method of measuring an ion dose-related quantity in a plasma immersion ion implantation reactor during ion implantation of a selected species into a workpiece, comprising:

  • placing said workpiece on a pedestal in said reactor and feeding into said reactor a process gas comprising a species to be implanted into said workpiece;

    coupling RF plasma source power to a plasma in said reactor;

    coupling RF bias power to said workpiece by an RF bias power generator that is coupled to said workpiece through a bias feedpoint of said reactor;

    measuring RF current at a measurement point at or displaced from said feedpoint to generate a current-related quantity; and

    computing the ion dose-related quantity from said current-related.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×