Methods of and apparatuses for controlling process profiles
First Claim
1. A method of adjusting a profile of process conditions of a substrate during processing, the method being performed using a process apparatus and a controller, the controller and process apparatus being coupled so the controller is capable of controlling the profile of process conditions experienced by the substrate, the controller being capable of using at least one control parameter, the method comprising the steps of:
- i. constructing a perturbation model that relates changes in the at least one control parameter to resulting changes in the profile of process conditions;
ii. using the perturbation model with at least one of a performance objective and a constraint
to derive optimized control parameters; and
iii. operating the controller with the optimized control parameters.
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Accused Products
Abstract
Presented are methods and apparatus for controlling the processing of a substrate during a process step that is sensitive to one or more process conditions. One embodiment includes a method performed with corresponding apparatus that includes a controller. One step includes constructing a perturbation model relating changes in control parameters for the apparatus to one or more resulting changes in the process. The method also includes the step of using the perturbation model with at least one of a performance objective and a constraint to derive optimized control parameters for the controller. Another step in the method includes operating the controller with the optimized control parameters. Another embodiment includes an apparatus for processing substrates where the apparatus comprises optimized control parameters.
65 Citations
31 Claims
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1. A method of adjusting a profile of process conditions of a substrate during processing, the method being performed using a process apparatus and a controller, the controller and process apparatus being coupled so the controller is capable of controlling the profile of process conditions experienced by the substrate, the controller being capable of using at least one control parameter, the method comprising the steps of:
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i. constructing a perturbation model that relates changes in the at least one control parameter to resulting changes in the profile of process conditions;
ii. using the perturbation model with at least one of a performance objective and a constraint
to derive optimized control parameters; and
iii. operating the controller with the optimized control parameters. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method of adjusting a spatial and temporal profile of process conditions of a substrate during processing, the method being performed using a process apparatus and a controller, the controller and process apparatus being coupled so the controller is capable of controlling the spatial or temporal profile of process conditions experienced by the substrate, the controller being configured for using at least one control parameter, the method comprising the steps of:
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i. constructing a perturbation model that relates changes in the at least one control parameter to resulting changes in a metric;
ii. using the perturbation model with at least one of a performance objective and a constraint
to derive optimized control parameters; and
iii. operating the controller with the optimized control parameters. - View Dependent Claims (19, 20, 21, 22, 23, 24)
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25. A method of controlling or adjusting critical dimensions of substrates for semiconductor device manufacturing, the method being performed using a controller that includes at least one control parameter and a process apparatus, the controller and process apparatus being coupled so the controller is capable of controlling spatial profiles or temporal profiles of at least one process condition of the substrate using the at least one control parameter, the method comprising the steps of:
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i. constructing a perturbation model that relates changes in the at least one control parameter to resulting changes in the critical dimensions;
ii. using the perturbation model with at least one of a performance objective and a constraint
to derive at least one optimized control parameter; and
iii. operating the controller with the at least one optimized control parameter. - View Dependent Claims (26, 27, 28, 29)
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30. A computer program product for deriving at least one optimized control parameter for controlling at least one process condition for processing a substrate, the computer program product comprising:
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executable code for a perturbation model configured for relating changes in the at least one control parameter to resulting changes in a spatial or a temporal profile of the at least one process condition for the substrate;
executable code for receiving or storing at least one of a performance objective and a constraint; and
executable code for deriving the at least one optimized control parameter using the perturbation model and the at least one of the performance objective and the constraint.
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31. A computer program product for deriving at least one optimized control parameter for controlling critical dimension uniformity for a semiconductor wafer, the computer program product comprising:
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executable code for a perturbation model configured for relating changes in the at least one control parameter to resulting changes in the critical dimension uniformity for the wafer;
executable code for receiving or storing at least one of a performance objective that includes a critical dimension uniformity and a constraint that includes a critical dimension uniformity; and
executable code for deriving the at least one optimized control parameter using the perturbation model and the at least one of the performance objective and the constraint.
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Specification