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Semiconductor device and method for manufacturing the same, and electric appliance

  • US 20060099738A1
  • Filed: 09/16/2005
  • Published: 05/11/2006
  • Est. Priority Date: 09/24/2004
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device comprising the steps of:

  • selectively forming a release layer over a first substrate;

    forming a first insulating layer over the first substrate with the release layer interposed therebetween;

    forming a plurality of thin film transistors over the first insulating layer;

    forming a second insulating layer over the first insulating layer;

    forming a first opening portion in the first insulating layer and the second insulating layer so that a portion of the first substrate is exposed;

    forming a second opening portion in the second insulating layer so that at least one of the source and drain regions of the plurality of thin film transistors is exposed;

    forming a first conductive layer for filling the first opening portion and a second conductive layer for filling the second opening portion;

    forming a third opening portion in the first insulating layer and the second insulating layer to expose a portion of the release layer is exposed;

    removing the release layer by introducing etchant into the third opening portion;

    attaching the plurality of thin film transistors to a second substrate so that the second conductive layer is connected to a third conductive layer provided over the second substrate;

    separating the plurality of thin film transistors from the first substrate; and

    attaching the plurality of thin film transistors to a third substrate so that the first conductive layer is connected to a fourth conductive layer provided over the third substrate.

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