Pattern generator using a dual phase step element and method of using same

• US 20060109576A1
• Filed: 11/24/2004
• Published: 05/25/2006
• Est. Priority Date: 11/24/2004
• Status: Active Grant

• Current Assignee: ASML Holding NV
• Original Assignee: ASML Holding NV
• Inventors: Baba-Ali, Nabila
• Granted Patent: US 7,643,192 B2
• Time in Patent Office: Days
• US Class Current: 359/879
• CPC Class Codes: G02B 26/0833 the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD G02B26/0825 takes precedence; micromechanical devices in general B81B
• CPC Class Codes: G03F 7/70283 Mask effects on the imaging process
• CPC Class Codes: G03F 7/70291 Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices

Abstract

A system and method are used to pattern light using an illumination system, an array of individually controllable components, and a projection system. The illumination system supplies a beam of radiation. The array of individually controllable elements patterns the beam. The array of individually controllable elements comprises mirrors having first and second steps on opposite edges. The projection system projects the patterned beam onto a target portion of an object. In various examples, the object can be a display, a semiconductor substrate or wafer, a flat panel display glass substrate, or the like, as is discussed in more detail below.

Claims

1. A system, comprising:

an illumination system that supplies a beam of radiation;

an array of individually controllable elements that patterns the beam, the array of individually controllable elements comprising mirrors having first and second steps on opposite edges; and

a projection system that projects the patterned beam onto a target portion of an object.

2. The system of claim 1, wherein a height and a width of the first and second steps of each respective one of the mirrors are sized to produce substantially equal positive and negative maximum amplitudes at the target portion over a complete range of tilt angles of the mirror.

3. The system of claim 1, wherein default positions of the mirrors are their ON states.

4. The system of claim 1, wherein default positions of the mirrors are their OFF states.

5. The system of claim 1, wherein a height and a width of the first and second steps of each respective one of the mirrors are sized so that the array of individually controllable elements emulates a binary reticle.

6. The system of claim 1, wherein a height and a width of the first and second steps of each respective one of the mirrors are sized so that the array of individually controllable elements emulates an attenuating phase shift reticle.

7. The system of claim 1, wherein a height and a width of the first and second steps of each respective one of the mirrors are sized so that the array of individually controllable elements emulates an alternating phase shift reticle.

8. The system of claim 1, wherein:

a height of the first and second steps on each respective one of the mirrors is approximately λ

/4, wherein λ

is wavelength of the beam of radiation supplied by the illumination system; and

9. The system of claim 1, wherein a width of the first and second steps on each respective one of the mirrors is approximately 5 nm to 12 nm.

10. The system of claim 1, wherein the object is a substrate.

11. The system of claim 1, wherein the object is a semiconductor substrate.

12. The system of claim 1, wherein the object is a flat panel display glass substrate.

13. The system of claim 1, wherein the object is a projection display.

30. The system of claim 1, wherein a width of the first and second steps on each respective one of the mirrors achieves equal maximum positive and negative amplitudes.

14. A patterning device, comprising:

an array of first reflective components, each of the first reflecting components having a first width and a first length;

an array of second reflective components, wherein respective ones of the array of second reflective components are coupled to a central portion of respective ones of the array of first reflective components, each of the second reflective components having a second width, which is substantially equal to the first width, and a second length, which is smaller than the first length, such that first steps are formed between first edges of respective ones of the coupled together first and second reflective components and second steps are formed between second edges of respective ones of the coupled together first and second reflective components; and

an array of controllers coupled to respective ones of the coupled together first and second reflective components, each of the controllers controlling the movement of each of the respective ones of the coupled together first and second reflective components.

15. The patterning device of claim 14, wherein a height and a width of each of the first and second steps of each of the coupled together first and second reflective component are sized to produce substantially equal positive and negative maximum intensities of reflected light over a range of tilt angles of each of the coupled together first and second reflective components.

16. The patterning device of claim 14, wherein default positions of each of the coupled together first and second reflective components are their ON states.

17. The patterning device of claim 14, wherein default positions of each of the coupled together first and second reflective components are their OFF states.

18. The patterning device of claim 14, wherein a height and a width of each of the first and second steps of each of the coupled together first and second reflective components are sized so that the patterning device emulates a binary reticle.

19. The patterning device of claim 14, wherein a height and a width of each of the first and second steps of each of the coupled together first and second reflective components are sized so that the patterning device emulates an attenuating phase shift reticle.

20. The patterning device of claim 14, wherein a height and a width of each of the first and second steps of each of the coupled together first and second reflective components are sized so that the patterning device emulates an alternating phase shift reticle.

21. The patterning device of claim 14, wherein:

a height of each of the first and second steps of each of the coupled together first and second reflective components is approximately λ

/4, wherein λ

is wavelength of the beam of radiation of the illumination system; and

22. The patterning device of claim 14, wherein a width of the first and second steps of each of the coupled together first and second reflective components is approximately 5 nm to 12 nm.

31. The patterning device of claim 14, wherein a width of the first and second steps on each respective one of the mirrors achieves equal maximum positive and negative amplitudes.

23. A method, comprising:

patterning a beam of radiation using an array of individually controllable elements, each element in the array having first and second steps on opposite edges; and

projecting the patterned beam onto a target portion of an object.

24. The method of claim 23, wherein the projecting step comprises using a substrate as the object.

25. The method of claim 23, wherein the projecting step comprises using a display device as the object.

26. The method of claim 23, wherein each element produces substantially equal positive and negative maximum amplitudes of reflected light over a complete range of tilt angles.

27. The method of claim 23, further comprising emulating a binary reticle using the array of individually controllable elements.

28. The method of claim 23, further comprising emulating an attenuating phase shift reticle using the array of individually controllable elements.

29. The method of claim 23, further comprising emulating an alternating phase shift reticle using the array of individually controllable elements.

32. A patterning device, comprising:

an array of first reflective components, each of the first reflecting components having a first width and a first length;

an array of second reflective components, wherein respective ones of the array of second reflective components are coupled to a peripheral portion of respective ones of the array of first reflective components, each of the second reflective components having a second width, which is substantially equal to the first width, and a second length, which is smaller than the first length, such that first steps are formed between first edges of respective ones of the coupled together first and second reflective components and second steps are formed between second edges of respective ones of the coupled together first and second reflective components; and

an array of controllers coupled to respective ones of the coupled together first and second reflective components, each of the controllers controlling the movement of each of the respective ones of the coupled together first and second reflective components.

33. The patterning device of claim 32, wherein a height and a width of each of the first and second steps of each of the coupled together first and second reflective component are sized to produce substantially equal positive and negative maximum intensities of reflected light over a range of tilt angles of each of the coupled together first and second reflective components.

34. The patterning device of claim 32, wherein default positions of each of the coupled together first and second reflective components are their ON states.

35. The patterning device of claim 32, wherein default positions of each of the coupled together first and second reflective components are their OFF states.

36. The patterning device of claim 32, wherein a height and a width of each of the first and second steps of each of the coupled together first and second reflective components are sized so that the patterning device emulates a binary reticle.

37. The patterning device of claim 32, wherein a height and a width of each of the first and second steps of each of the coupled together first and second reflective components are sized so that the patterning device emulates an attenuating phase shift reticle.

38. The patterning device of claim 32, wherein a height and a width of each of the first and second steps of each of the coupled together first and second reflective components are sized so that the patterning device emulates an alternating phase shift reticle.

39. The patterning device of claim 32, wherein:

a height of each of the first and second steps of each of the coupled together first and second reflective components is approximately λ

/4, wherein λ

is wavelength of the beam of radiation of the illumination system; and

40. The patterning device of claim 32, wherein a width of the first and second steps of each of the coupled together first and second reflective components is approximately 5 nm to 12 nm.