High-voltage transistor and fabricating method thereof

  • US 20060138549A1
  • Filed: 12/22/2005
  • Published: 06/29/2006
  • Est. Priority Date: 12/29/2004
  • Status: Abandoned Application
First Claim
Patent Images

1. A high-voltage transistor, comprising:

  • a substrate;

    a shallow-trench isolation layer in the shallow trench provided to an upper part of the substrate to a prescribed depth to define an active area;

    an extended drain region enclosing the shallow-trench isolation layer;

    a source region provided to an upper part of the substrate to be spaced apart from the extended drain region by a channel area;

    a drain region at a level below the shallow-trench isolation layer within the extended drain region;

    a gate insulating layer pattern provided on the channel area; and

    a gate conductive layer pattern provided on the gate insulating layer pattern.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×