Semiconductor device, electronic device, and method of manufacturing semiconductor device

• US 20060170111A1
• Filed: 01/17/2006
• Published: 08/03/2006
• Est. Priority Date: 01/28/2005
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kawamata, Ikuko, Fujii, Gen, Isa, Toshiyuki, Morisue, Masafumi
• Granted Patent: US 7,635,889 B2
• Time in Patent Office: Days
• US Class Current: 257/775
• CPC Class Codes: H01L 21/02672 using crystallisation enhancing elements
• CPC Class Codes: H01L 21/288 from a liquid, e.g. electrolytic deposition
• CPC Class Codes: H01L 21/76838 characterised by the formation and the after-treatment of the conductors etching for patterning the conductors H01L21/3213
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 27/1292 using liquid deposition, e.g. printing
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H10K 59/123 Connection of the pixel electrodes to the thin film transistors [TFT]
• CPC Class Codes: H10K 59/131 Interconnections, e.g. wiring lines or terminals
• CPC Class Codes: H10K 71/236 using printing techniques, e.g. applying the etch liquid using an ink jet printer
• CPC Class Codes: H10K 71/611 using printing deposition, e.g. ink jet printing
• CPC Class Codes: H10K 71/621 Providing a shape to conductive layers, e.g. patterning or selective deposition
• CPC Class Codes: Y02P 80/30 Reducing waste in manufacturing processes; Calculations of released waste quantities

Abstract

Conductive layers having knots are adjacently formed with uniform distance therebetween. Droplets of the conductive layers are discharged to stagger centers of the droplets in a length direction of wirings so that the centers of the discharged droplets are not on the same line in a line width direction between the adjacent conductive layers. Since the centers of the droplets are staggered, parts of the conductive layers each having a widest line width (the widest width of knot) are not connected to each other, and the conductive layers can be formed adjacently with a shorter distance therebetween.

Claims

1. A semiconductor device comprising:

a first wiring having a plurality of line widths and curving in at least one portion, and

a second wiring having a plurality of line widths and curving in at least one portion,

wherein the first wiring is symmetrical along a centerline of the first wiring,

wherein the second wiring is symmetrical along a centerline of the second wiring, and

wherein a distance between the first and the second wirings is uniform.

2. An electronic device according to claim 1, wherein the semiconductor device is a display device, a video camera, a digital camera, a personal computer, or a portable information terminal.

3. A semiconductor device comprising:

a first conductive layer in which line width is continuously varied, and

a second conductive layer in which line width is continuously varied,

wherein side portions of the first and the second conductive layers each have a continuous wave shape, and

wherein a distance between the first and the second conductive layers is uniform.

4. An electronic device according to claim 3, wherein the semiconductor device is a display device, a video camera, a digital camera, a personal computer, or a portable information terminal.

5. A semiconductor device comprising:

a first conductive layer in which line width is continuously varied, and

a second conductive layer in which line width is continuously varied,

wherein side portions of the first and the second conductive layers each have a continuous wave shape, and

wherein portions of the first conductive layer having widest widths are aligned with portions of the second conductive layer having narrowest widths in a line width direction of the first and second conductive layers.

6. A semiconductor device according to claim 5 wherein portions of the first conductive layer having narrowest widths are aligned with portions of the second conductive layer having widest widths in a line width direction of the first and second conductive layers.

7. An electronic device according to claim 5, wherein the semiconductor device is a display device, a video camera, a digital camera, a personal computer, or a portable information terminal.

8. A semiconductor device comprising:

a gate electrode layer;

a gate insulating layer;

a semiconductor layer;

a source electrode layer; and

a drain electrode layer,

wherein the source and the drain electrode layers have a plurality of line widths and curve in at least one portion;

the source electrode layer is symmetrical along a centerline;

the drain electrode layer is symmetrical along a centerline; and

distance between the source and the drain electrode layers is uniform.

9. An electronic device according to claim 8, wherein the semiconductor device is a display device, a video camera, a digital camera, a personal computer, or a portable information terminal.

10. A semiconductor device comprising:

a gate electrode layer;

a gate insulating layer;

a semiconductor layer;

a source electrode layer; and

a drain electrode layer,

wherein line widths of the source and the drain electrode layers are continuously varied;

side portions of the first and the second conductive layers each have a continuous wave shape; and

distance between the source and the drain electrode layers is uniform.

11. An electronic device according to claim 10, wherein the semiconductor device is a display device, a video camera, a digital camera, a personal computer, or a portable information terminal.

12. A method of manufacturing a semiconductor device comprising the steps of:

discharging first droplets having centers on a first line over the substrate, and second droplets having centers on a second line parallel to the first line;

discharging third droplets having centers on the first line between the first droplets to form a first conductive layer which is line symmetrical along the first line and has a plurality of line widths; and

discharging fourth droplets having centers on the second line between the second droplets to form a second conductive layer which is line symmetrical along the second line and has a plurality of line widths,

wherein the first droplets, the second droplets, the third droplets and the fourth droplets are made of a composition containing a conductive material, and

wherein the first and the second conductive layers are formed with uniform distance therebetween.

13. A method of manufacturing a semiconductor device according to claim 12, further comprising a step of performing a treatment of controlling wettability of a region, where the plurality of droplets made of the composition containing a conductive material is attached, with respect to the composition containing a conductive material.

14. A method of manufacturing a semiconductor device according to claim 13, wherein the treatment controlling the wettability comprises a step of forming a substance containing a fluorocarbon group or a substance containing a silane coupling agent.

15. A method of manufacturing a semiconductor device comprising the steps of:

discharging, over a substrate, first droplets having centers on a first line over the substrate and second droplets having centers on a second line parallel to the first line;

discharging third droplets having centers on the first line between the first droplets to form a first conductive layer which has a continuous wave shape at a side portion and a continuously varying line width;

discharging fourth droplets having centers on the second line between the second droplets to form a second conductive layer which has a continuous wave shape at a side portion and a continuously varying line width,

wherein the first droplets, the second droplets, the third droplets and the fourth droplets are made of a composition containing a conductive material, and

wherein the first and the second conductive layers are formed with uniform distance therebetween.

16. A method of manufacturing a semiconductor device according to claim 15, further comprising a step of performing a treatment of controlling wettability of a region, where the plurality of droplets made of the composition containing a conductive material is attached, with respect to the composition containing a conductive material.

17. A method of manufacturing a semiconductor device according to claim 16, wherein the treatment controlling the wettability comprises a step of forming a substance containing a fluorocarbon group or a substance containing a silane coupling agent.

18. A method of manufacturing a semiconductor device comprising the steps of:

forming a conductive film over a substrate;

discharging, over the conductive film, first droplets having centers on a first line over the substrate and second droplets having centers on a second line parallel to the first line;

discharging third droplets having a center on the first line between the first droplets to form a first mask layer which is symmetrical along the first line and has a plurality of line widths;

discharging fourth droplets having centers on the second line between the second droplets to form a second mask layer which is symmetrical along the second line and has a plurality of line widths; and

processing the conductive film using the first and the second mask layers to form first and second conductive layers with uniform distance therebetween,

wherein the first droplets, the second droplets, the third droplets and the fourth droplets are made of a composition containing a mask layer material.

19. A method of manufacturing a semiconductor device according to claim 18, further comprising a step of performing a treatment of controlling wettability of the conductive film with respect to the composition containing a mask layer material.

20. A method of manufacturing a semiconductor device according to claim 19, wherein the treatment controlling the wettability comprises a step of forming a substance containing a fluorocarbon group or a substance containing a silane coupling agent.

21. A method of manufacturing a semiconductor device comprising the steps of:

forming a conductive film over a substrate;

discharging first droplets having centers on a first line over the substrate and second droplets having centers on a second line parallel to the first line;

discharging third droplets having centers on the first line between the first droplets to form a first mask layer which has a continuous wave shape at a side portion and a continuously varying line width;

discharging fourth droplets having centers on the second line between the second droplets to form a second mask layer which has a continuous wave shape at a side portion and a continuously varying line width; and

processing the conductive film using the first and the second mask layers to form first and second conductive layers with uniform distance therebetween,

wherein the first droplets, the second droplets, the third droplets and the fourth droplets are made of a composition containing a mask layer material.

22. A method of manufacturing a semiconductor device according to claim 21, further comprising a step of performing a treatment of controlling wettability of the conductive film with respect to the composition containing a mask layer material.

23. A method of manufacturing a semiconductor device according to claim 22, wherein the treatment controlling the wettability comprises a step of forming a substance containing a fluorocarbon group or a substance containing a silane coupling agent.