Thin film transistor panel

• US 20060192204A1
• Filed: 02/16/2006
• Published: 08/31/2006
• Est. Priority Date: 02/28/2005
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Casio Computer Company Limited
• Inventors: Yamaguchi, Ikuhiro, Takei, Manabu, Yoshida, Motohiko
• Granted Patent: US 7,795,621 B2
• Time in Patent Office: Days
• US Class Current: 257/72
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A thin film transistor panel including: a transparent substrate; scanning lines made of a light blocking electroconductive material to be formed on the transparent substrate; data lines formed on the transparent substrate to be perpendicular to the scanning lines and made of a light blocking electroconductive material; thin film transistors, each provided with a transparent gate electrode connected to one of the scanning lines, a transparent drain electrode connected to one of the data lines, a transparent source electrode and a transparent semiconductor thin film; and transparent pixel electrodes connected to the thin film transistors, wherein each of the pixel electrodes is formed to cover at least a part of the gate electrode of each of the thin film transistors.

Claims

1. A thin film transistor panel comprising:

a transparent substrate;

scanning lines made of a light blocking electroconductive material to be formed on the transparent substrate;

data lines formed on the transparent substrate to be perpendicular to the scanning lines and made of a light blocking electroconductive material;

thin film transistors, each provided with a transparent gate electrode connected to one of the scanning lines, a transparent drain electrode connected to one of the data lines, a transparent source electrode and a transparent semiconductor thin film; and

transparent pixel electrodes connected to the thin film transistors,

wherein each of the pixel electrodes is formed to cover at least a part of the gate electrode of each of the thin film transistors.

2. The thin film transistor panel according to claim 1, wherein each of the pixel electrodes is formed to cover each of the thin film transistors.

3. The thin film transistor panel according to claim 1, wherein each of the thin film transistors is provided with the semiconductor thin film made of a metal oxide, the drain electrode made of a metal oxide including impurities, the source electrode and the gate electrode.

4. The thin film transistor panel according to claim 3, wherein the drain electrode and the source electrode are formed on the semiconductor thin film.

5. The thin film transistor panel according to claim 3, wherein the gate electrode of each of the thin film transistors is formed with a metal oxide including p type impurities.

6. The thin film transistor panel according to claim 3, wherein one end portion of the gate electrode is laminated on the scanning line and one end portion of the drain electrode is laminated on the data line.

7. The thin film transistor panel according to claim 6, wherein a transparent metal oxide film is formed on at least either of the top face and the under face of each of the scanning line and the data line.

8. The thin film transistor panel according to claim 1, wherein each of the pixel electrodes is formed with a transparent metal oxide and functions also as each of the source electrodes.

9. The thin film transistor panel according to claim 8, further comprising:

transparent anode electrodes electrically connected to the pixel electrodes;

organic EL layers; and

a cathode electrode.

10. The thin film transistor panel according to claim 9, wherein the anode electrodes are formed on the pixel electrodes.

11. The thin film transistor panel according to claim 9, wherein the anode electrodes, the organic EL layers and the cathode electrode are laminated in the order from the side of the pixel electrodes.

12. The thin film transistor panel according to claim 11, wherein the cathode electrode is a reflecting electrode.