Etching method

  • US 20060219660A1
  • Filed: 03/31/2006
  • Published: 10/05/2006
  • Est. Priority Date: 03/31/2005
  • Status: Active Grant
First Claim
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1. A method for etching an insulation film through a patterned mask, comprising:

  • a first process of etching the insulation film until just before an underlayer is about to be exposed by applying a first plasma of a first processing gas;

    a second process of modifying a quality of a remaining film of the insulation film by applying a second plasma of a second processing gas, the second plasma being different from the first plasma; and

    a third process of removing the insulation film having a modified film quality with a liquid chemical.

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