Process to make high-K transistor dielectrics
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Abstract
A method of reducing impurities in a high-k dielectric layer comprising the following steps. A substrate is provided. A high-k dielectric layer having impurities is formed over the substrate. The high-k dielectric layer being formed by an MOCVD or an ALCVD process. The high-k dielectric layer is annealed to reduce the impurities within the high-k dielectric layer.
76 Citations
56 Claims
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1-18. -18. (canceled)
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19. A method of reducing impurities in a high-k dielectric layer, comprising the steps of:
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providing a substrate;
forming a high-k dielectric layer having impurities therein;
the high-k dielectric layer being formed by an MOCVD or an ALCVD process;
annealing the high-k dielectric layer to reduce the impurities within the high-k dielectric layer; and
forming a gate layer upon the annealed high-k dielectric layer. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37)
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38. A method of reducing impurities in a high-k dielectric layer, comprising the steps of:
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providing a substrate having STIs formed therein;
forming a high-k dielectric layer between the STIs;
the high-k dielectric layer having impurities therein and being formed by an MOCVD or an ALCVD process;
annealing the high-k dielectric layer to reduce the impurities within the high-k dielectric layer without additional oxidation of the high-k dielectric layer; and
forming a gate layer upon the annealed high-k dielectric layer. - View Dependent Claims (39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56)
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Specification