Abrasive, method of polishing target member and process for producing semiconductor device
First Claim
1. An abrasive comprising a slurry including a medium and cerium oxide particles dispersed in said medium, said cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries.
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Abstract
To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.
38 Citations
29 Claims
- 1. An abrasive comprising a slurry including a medium and cerium oxide particles dispersed in said medium, said cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries.
- 24. An abrasive comprising a slurry including a medium and abrasive grains having pores which are dispersed in said medium.
- 28. An abrasive comprising a slurry including a medium and dispersed therein cerium oxide particles having a bulk density not higher than 6.5 g/cm3.
Specification