Method and apparatus for providing flexible photodetector binning

• US 20060249657A1
• Filed: 05/09/2005
• Published: 11/09/2006
• Est. Priority Date: 05/09/2005
• Status: Active Grant

• Current Assignee: Sensors Unlimited Inc. (Raytheon Technologies Corporation d/b/a RTX)
• Original Assignee: Sensors Unlimited Inc. (Raytheon Technologies Corporation d/b/a RTX)
• Inventors: O'Grady, Matthew T.
• Granted Patent: US 7,365,299 B2
• Time in Patent Office: Days
• US Class Current: 250/214.R
• CPC Class Codes: H01L 27/14603 Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H04N 25/40 Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
• CPC Class Codes: H04N 25/46 by combining or binning pixels

Abstract

A method and apparatus for providing flexible photodetector binning are provided. A photodetector having multiple pixels, such as a charged coupled device (CCD), a focal plane array (FPA), an active pixel sensor (APS), or other suitable detector, is provided. A desired bin area is produced in the array by setting at least one of the pixels of the array to a low input impedance level and remaining pixels to a high input impedance level, so that charges generated at the high input impedance pixels diffuse through the detector array to adjacent, low input impedance pixels. The charge is collected at the low input impedance pixels, and corresponds to light detected in the bin area. The impedances of the pixels can be varied to provide bins of desired shapes and/or geometries. The bin areas can extend partially over one or more pixels.

Claims

1. A photodetector for providing flexible binning comprising:

an array of pixels;

means for individually controlling input impedance levels of each of the pixels; and

a bin area within the array of pixels for detecting photons, wherein shape of the bin area is adjustable by the means for individually controlling the input impedance levels of the pixels.

2. The photodetector of claim 1, wherein the array of pixels comprises a charge coupled device (CCD) photodetector.

3. The photodetector of claim 1, wherein the array of pixels comprises a focal plane array (FPA).

4. The photodetector of claim 1, wherein the array of pixels comprises an active pixel sensor (APS).

5. The photodetector of claim 1, wherein the means for individually controlling input impedance levels comprises a plurality of transistors connected to the array of pixels.

6. The photodetector of claim 5, wherein each of transistors are settable to high or low input impedance levels.

7. The photodetector of claim 1, wherein the means for individually controlling input impedance levels comprises control signals propagated through rows and columns of the array of pixel for controlling pixel input impedance levels.

8. The photodetector of claim 1, wherein the array of pixels comprises at least one high input impedance pixel and at least one low input impedance pixel.

9. The photodetector of claim 8, wherein charges generated by photons received within the bin area are collectable at the low input impedance pixel.

10. The photodetector of claim 9, wherein charge carriers generated in the high input impedance pixel migrate to the low input impedance pixel.

11. The photodetector of claim 1, wherein the shape of the bin area is adjustable by switching input impedance levels of pixels of the array.

12. The photodetector of claim 11, wherein the bin area is rectangular in shape.

13. The photodetector of claim 11, wherein the bin area is square in shape.

14. The photodetector of claim 11, wherein the bin area is triangular in shape.

15. The photodetector of claim 11, wherein the bin area is generally circular in shape.

16. The photodetector of claim 1, wherein the bin area extends over partial pixel areas.

17. A method for providing flexible photodetector binning comprising:

providing a photodetector array;

producing a bin area within the photodetector array by setting at least one pixel within the bin area to a low input impedance level and setting remaining pixels within the bin area to high input impedance level;

receiving photons with the photodetector array, the photons generating charges within the pixels of the array;

allowing charges generated at high input impedance pixels to migrate to at least one low input impedance pixel; and

collecting charges at the at least one low input impedance pixel, the charges corresponding to photons received by the bin area.

18. The method of claim 17, wherein the step of providing a photodetector comprises providing a charge coupled device (CCD) photodetector.

19. The method of claim 17, wherein the step of providing a photodetector comprises providing a focal plane array (FPA).

20. The method of claim 17, wherein the step of providing a photodetector comprises providing an active pixel sensor (APS).

21. The method of claim 17, wherein the step of producing the bin area comprises selectively setting transistors connected to the pixels to high or low input impedance settings.

22. The method of claim 17, wherein the step of producing the bin area comprises sending input impedance control signals through rows and columns of the array to selectively set the pixels to high or low input impedance settings.

23. The method of claim 17, further comprising:

altering input impedance levels of one or more pixels in the array to produce a new bin area;

receiving photons with the new bin area; and

collecting charges from at least one low input impedance pixel within the new bin area, the charges corresponding to photons received by the new bin area.