Bank selection signal control circuit for use in semiconductor memory device, and bank selection control method
First Claim
1. A bank selection signal control circuit for a semiconductor memory device, the circuit comprising:
- a bank switch control unit that receives memory bank selection signals and outputs corresponding memory bank selection control signals to selectively connect memory banks to a global data input/output line according to a predetermined sequence, wherein for each selected memory bank in the predetermined sequence which is selected prior to a last selected memory bank, the bank switch control unit outputs memory bank selection control signals that are enabled for a first time period P1, and wherein for the last selected memory bank in the predetermined sequence, the bank switch control unit outputs a memory bank selection control signal that is enabled for a second time period P2, wherein P2 is greater than P1; and
a switching unit for sequentially connecting each selected memory bank to the global data input/output line according to the predetermined sequence, and for a predetermined period P1 or P2, in response to the corresponding bank selection control signals.
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Accused Products
Abstract
Memory bank selection control circuits and methods are provided which improve the data sensing margin for data sense amplifiers in a multi-bank semiconductor memory structure. In one aspect, a bank selection signal control circuit includes a bank switch control unit that receives memory bank selection signals and outputs corresponding memory bank selection control signals to selectively connect memory banks to a global data input/output line according to a predetermined sequence. For memory bank selected prior to a last selected memory bank in the predetermined sequence, the bank switch control unit outputs memory bank selection control signals that are enabled for a first time period P1, and for the last selected memory bank, the bank switch control unit outputs a memory bank selection control signal that is enabled for a second time period P2, wherein P2 is greater than P1. A switching unit sequentially connects each selected memory bank to the global data input/output line according to the predetermined sequence, and for a predetermined period P1 or P2, in response to the corresponding bank selection control signals.
102 Citations
20 Claims
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1. A bank selection signal control circuit for a semiconductor memory device, the circuit comprising:
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a bank switch control unit that receives memory bank selection signals and outputs corresponding memory bank selection control signals to selectively connect memory banks to a global data input/output line according to a predetermined sequence, wherein for each selected memory bank in the predetermined sequence which is selected prior to a last selected memory bank, the bank switch control unit outputs memory bank selection control signals that are enabled for a first time period P1, and wherein for the last selected memory bank in the predetermined sequence, the bank switch control unit outputs a memory bank selection control signal that is enabled for a second time period P2, wherein P2 is greater than P1; and
a switching unit for sequentially connecting each selected memory bank to the global data input/output line according to the predetermined sequence, and for a predetermined period P1 or P2, in response to the corresponding bank selection control signals. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor memory device, comprising:
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a plurality of memory banks;
a global data input/output line shared by the plurality of memory banks;
a data sense amplifier connected to the global data input/output line;
a multiplexer for selectively connecting the memory banks to the global data input/output line in response to bank selection control signals; and
a bank selection signal control circuit for generating the bank selection control signals to control the multiplexer, wherein at least one bank selection control signal for selectively connecting one of the memory banks with the global data input/output line is enabled for a time period P2 which is greater than a time period P1 for which all other bank selection control signals are enabled. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A method for performing a bank interleaving operation in a semiconductor memory device having a plurality of memory banks, the method comprising:
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receiving a sequence of bank selection signals for selecting a plurality of memory banks;
outputting a sequence of bank selection control signals in response to the sequence of bank selection signals to selectively connect the memory banks to a global data input/output line according to a predetermined sequence, wherein at least one of the bank selection control signals is enabled for a time period P2 which is greater than a time period P1 for which all other bank selection control signals are enabled. - View Dependent Claims (18, 19, 20)
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Specification