Measuring overlay and profile asymmetry using symmetric and anti-symmetric scatterometry signals

• US 20060274310A1
• Filed: 01/04/2006
• Published: 12/07/2006
• Est. Priority Date: 06/06/2005
• Status: Active Grant

• Current Assignee: Kla-Tencor Technologies Corporation (KLA Corporation)
• Original Assignee: Kla-Tencor Technologies Corporation (KLA Corporation)
• Inventors: Fu, Jiyou, Friedmann, Michael, Kandel, Daniel, Krishnan, Shankar, Golovanevsky, Boris, Gross, Kenneth P.
• Granted Patent: US 7,277,172 B2
• Time in Patent Office: Days
• US Class Current: 356/369
• CPC Class Codes: G01N 21/211 Ellipsometry optical thickness measurement G01B11/06
• CPC Class Codes: G01N 21/9501 Semiconductor wafers manufacturing processes per se of semiconductor devices implementing a measuring step H01L22/10
• CPC Class Codes: G01N 21/956 Inspecting patterns on the surface of objects contactless testing of electronic circuits G01R31/308; testing currency G07D; manufacturing processes per se of semiconductor devices implementing a measuring step H01L22/10
• CPC Class Codes: G03F 7/70633 Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching

Abstract

Systems and methods are disclosed for using ellipsometer configurations to measure the partial Mueller matrix and the complete Jones matrix of a system that may be isotropic or anisotropic. In one embodiment two or more signals, which do not necessarily satisfy any symmetry assumptions individually, are combined into a composite signal which satisfies a symmetry assumption. The individual signals are collected at two or more analyzer angles. Symmetry properties of the composite signals allow easy extraction of overlay information for any relative orientation of the incident light beam with respect to a ID grating target, as well as for targets comprising general 2D gratings. Signals of a certain symmetry property also allow measurement of profile asymmetry in a very efficient manner. In another embodiment a measurement methodology is defined to measure only signals which satisfy a symmetry assumption. An optional embodiment comprises a single polarization element serving as polarizer and analyzer. Another optional embodiment uses an analyzing prism to simultaneously collect two polarization components of reflected light.

Claims

1. An ellipsometry method for estimating overlay between a plurality of first structures in a first layer of a sample and a plurality of second structures in a second layer of the sample, the method comprising:

providing a plurality of cells that each include a portion of the first and second structures, wherein each cell is designed to have an offset between its first and second structures portions;

illuminating the cells with electromagnetic radiation using a rotating polarizer;

obtaining measurements with an analyzer set at a plurality of polarization angles, wherein the measurements include reflected radiation intensities with the analyzer set at the plurality of polarization angles;

combining the measurements into combinational signals for each of the cells so that the combinational signals are even or odd functions of a total shift between the first and second structures; and

estimating any overlay error between the first structures and the second structures based on the combinational signals.

2. The method of claim 1, wherein the measurements are obtained with a continuously rotating analyzer.

3. The method of claim 2, wherein the analyzer rotates in the same direction as the polarizer.

4. The method of claim 2, wherein the analyzer rotates in the opposite direction of the polarizer.

5. The method of claim 2, wherein stepper motors or servo motors are used to rotate the polarizer and the analyzer.

6. The method of claim 5, wherein synchronization between motors allows a rotation phase control between the polarizer and the analyzer, and wherein the analyzer and the polarizer are rotated in the same direction or in opposite directions.

7. The method of claim 2, wherein the ratio between the rotation rates of the polarizer and the analyzer is adjustable.

8. The method of claim 2, wherein the polarizer and analyzer form a same element that rotate together.

9. The method of claim 1, wherein the cells include three or more cells and the combinational signals are each odd functions of the total shift between the first and second structures.

10. The method of claim 1, wherein the cells include four or more cells and the combinational signals are each even functions of the total shift between the first and second structures.

11. The method of claim 1, wherein the estimating any overlay error comprises:

determining a first difference signal Sig₁-Sig₂ between a first combinational signal from a first cell and a second combinational signal from a second cell;

determining a second difference signal Sig₃-Sig₄ between a third combinational signal from a third cell and a fourth combinational signal from a fourth cell;

determining any overlay error by performing a linear approximation based on the first and second difference signals.

12. The method of claim 1, wherein the measurements comprise one or more elements of the Jones matrix or the Mueller matrix of the sample.

13. The method of claim 1, wherein the sample is in a semiconductor wafer, and the first and second plurality of structures comprise semiconductor devices.

14. The method of claim 1, wherein the plurality of angles consist of a first angle A and a second angle −

A and the measurements are obtained with the analyzer at the angles A and −

A.

15. The method of claim 1, wherein each measurement comprises a sum of measurements taken over a range of specific ones of the plurality of angles.

16. The method of claim 15, wherein there are eight measurement sums that are obtained over eight different angle ranges.

17. The method of claim 15, wherein there are sixteen measurement sums that are obtained over sixteen different angle ranges.

18. The method of claim 1, wherein the measurements are obtained by using the ordinary and extra-ordinary beams from a Rochon prism analyzer to obtain signals from two analyzer angles simultaneously.

19. A system for estimating overlay between a plurality of first structures in a first layer of a sample and a plurality of second structures in a second layer of the sample, comprising:

an ellipsometry module for;

illuminating the cells with electromagnetic radiation using a rotating polarizer;

obtaining measurements with an analyzer set at a plurality of polarization angles, wherein the measurements include reflected radiation intensities with the analyzer set at the plurality of polarization angles; and

combining the measurements into combinational signals for each of the cells so that the combinational signals are even or odd functions of a total shift between the first and second structures; and

a processor operable for estimating any overlay error between the first structures and the second structures based on the combinational signals.

20. The system of claim 19, wherein the measurements are obtained with a continuously rotating analyzer.

21. The system of claim 20, wherein the polarizer and analyzer form a same element that rotate together.

22. The system of claim 19, wherein the cells include three or more cells and the combinational signals are each odd functions of the total shift between the first and second structures.

23. The system of claim 19, wherein the cells include four or more cells and the combinational signals are each even functions of the total shift between the first and second structures.

24. The method of claim 19, wherein the estimating any overlay error comprises:

determining a first difference signal Sig₁-Sig₂ between a first combinational signal from a first cell and a second combinational signal from a second cell;

determining a second difference signal Sig₃-Sig₄ between a third combinational signal from a third cell and a fourth combinational signal from a fourth cell;

determining any overlay error by performing a linear approximation based on the first and second difference signals.

25. An ellipsometry method for measuring profile asymmetry of a structure of a sample, the method comprising:

(a) illuminating a structure with electromagnetic radiation using a rotating polarizer;

(b) obtaining a plurality of measurements with an analyzer set at a plurality of polarization angles, wherein the measurements include reflected radiation intensities with the analyzer set at the plurality of polarization angles;

(c) combining the measurements into a combinational signal so that the combinational signals is an odd functions; and

(d) determining a degree of profile asymmetry of the structure based on the combinational signal.

26. The method of claim 25, wherein operations (a) through (d) are performed for a plurality of cells that each include a portion of a first structure on a first layer and a second structure on a second layer and wherein each cell is designed to have an offset between its first and second structures, and wherein determining the degree of profile asymmetry comprises separating a contribution of profile asymmetry to the measurements from a contribution of overlay to the measurements.

27. The method of claim 26, further comprising:

estimating any overlay error between the first structures and the second structures based on the signals and the determined profile asymmetry.