Silicon thin film transistor and method of manufacturing the same

• US 20060284179A1
• Filed: 06/19/2006
• Published: 12/21/2006
• Est. Priority Date: 06/18/2005
• Status: Abandoned Application

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kim, Do-Young, Jung, Ji-sim, Kwon, Jang-yeon, Noguchi, Takashi, Kim, Jong-man
• Application Number:
  US11/455,559
• Publication Number:
  US 20060284179A1
• Time in Patent Office: Days
• US Class Current: 257/59
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence

Abstract

A silicon thin film transistor (“TFT”) and method of manufacturing the same are provided where the silicon TFT includes buffer layers deposited on both surfaces of a substrate, respectively, and a silicon channel is deposited on one of the buffer layers. A gate insulator is deposited on the silicon channel, and a gate is deposited on the gate insulator. Because of the buffer layers deposited on both surfaces of the substrate, the bending of the substrate is prevented and the silicon TFT has good operating performance.

Claims

1. A silicon thin film transistor comprising:

a plastic substrate having a first surface and a second surface on an opposite side from the first surface;

a first buffer layer and a second buffer layer deposited on the first and second surfaces of the plastic substrate, respectively;

a silicon channel deposited on the first buffer layer;

a gate insulator deposited on the silicon channel; and

a gate deposited on the gate insulator.

2. The silicon thin film transistor of claim 1, wherein the silicon channel is formed of poly crystalline silicon.

3. The silicon thin film transistor of claim 1, wherein each of the first and second buffer layers has a thickness of 4000 Å

or more.

4. The silicon thin film transistor of claim 3, wherein each of the first and second buffer layers has a roughness of 40 Å

or less.

5. The silicon thin film transistor of claim 1, wherein each of the first and second buffer layers has a roughness of 40 Å

or less.

6. The silicon thin film transistor of claim 1, wherein the first and second buffer layers are formed using a same material and are formed with a same thickness.

7. The silicon thin film transistor of claim 6, wherein the first and second buffer layers are formed of one material selected from a group consisting of SiO₂, SiN, and SiON.

8. The silicon thin film transistor of claim 1, wherein the plastic substrate is disposed between the first buffer layer and the second buffer layer.

9. The silicon thin film transistor of claim 1, wherein the plastic substrate does not bend after deposition of the first buffer layer and the second buffer layer thereon.

10. The silicon thin film transistor of claim 9, wherein the plastic substrate is flexible prior to deposition of the first buffer layer and the second buffer layer thereon.

11. A thin film transistor comprising:

a substrate formed from a flexible material and having a first surface and an opposite second surface;

a first buffer layer deposited on the first surface; and

,

a second buffer layer deposited on the second surface, the plastic substrate disposed between the first buffer layer and the second buffer layer;

wherein the first buffer layer and the second buffer layer are formed of a material preventing the substrate from bending.

12. The thin film transistor of claim 11, further comprising a silicon layer formed on the first buffer layer.

13. The thin film transistor of claim 11, wherein the material of the first buffer layer and the second buffer layer prevents the substrate from deforming due to thermal processes.

14. The thin film transistor of claim 11, wherein the substrate is plastic and the first and second buffer layers are formed on one material selected from a group consisting of SiO₂, SiN, and SiON.

15. A method of manufacturing a silicon thin film transistor including a substrate having a first surface and a second surface on an opposite side from the first surface, a silicon thin layer deposited on the substrate, a gate corresponding to the silicon thin layer, and a gate insulator interposed between the silicon thin layer and the gate, the method comprising:

forming first and second buffer layers on the first and second surfaces of the substrate, respectively, before forming the silicon thin layer; and

forming the silicon thin layer on the first buffer layer formed on the first surface of the substrate.

16. The method of claim 15, wherein forming the first and second buffer layers includes forming each of the first and second buffer layers to a thickness of 4000 Å

or more.

17. The method of claim 16, wherein forming the first and second buffer layers includes forming each of the first and second buffer layers to a roughness of 40 Å

or less.

18. The method of claim 15, wherein forming the first and second buffer layers includes forming each of the first and second buffer layers to a roughness of 40 Å

or less.

19. The method of claim 15, wherein forming the silicon thin layer comprises:

forming an amorphous silicon layer on the first buffer layer; and

poly-crystallizing the amorphous silicon layer through a thermal process.

20. The method of claim 19, wherein forming the first and second buffer layers includes forming the first and second buffer layers using a same material.

21. The method of claim 20, wherein the first and second buffer layers are formed of one material selected from a group consisting of SiO₂, SiN, and SiON.

22. The method of claim 15, wherein forming the first and second buffer layers includes forming buffer layers using a same material.

23. The method of claim 22, wherein the first and second buffer layers are formed of one material selected from a group consisting of SiO₂, SiN, and SiON.

24. The method of claim 15, wherein the first and second buffer layers are formed of one material selected from a group consisting of SiO₂, SiN, and SiON.

25. The method of claim 15, wherein the substrate is flexible prior to forming the first and second buffer layers thereon, and wherein forming the first and second buffer layers on the first and second surfaces of the substrate prevents the substrate from bending.