Electrostatic chuck, wafer processing apparatus and plasma processing method
First Claim
1. An electrostatic chuck used in a wafer processing apparatus which processes a semiconductor wafer by use of a plasma, comprising:
- a base material in which multiple coolant grooves are formed;
a high resistance layer which is formed on the base material;
multiple heaters which are formed by thermally spraying conductors within the high resistance layer; and
multiple electrostatic chuck electrodes which are formed similarly by thermally spraying conductors within the high resistance layer.
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Accused Products
Abstract
An electrostatic chuck which is built in a heater and can change, at a high speed, the temperature distribution of a wafer being processed by a plasma is provided at low cost. Also, there is provided a processing method which realizes uniform etching by suppressing CD variations in the plane of the wafer even when etching conditions change. The electrostatic chuck includes a base material in which multiple coolant grooves are formed, a high resistance layer which is formed on the base material, multiple heaters which are formed by thermally spraying conductors within the high resistance layer, multiple electrostatic chuck electrodes which are formed similarly by thermally spraying conductors within the high resistance layer, and temperature measuring means, and adjusts outputs of the heaters on the basis of temperature information of the temperature measuring means.
30 Citations
14 Claims
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1. An electrostatic chuck used in a wafer processing apparatus which processes a semiconductor wafer by use of a plasma, comprising:
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a base material in which multiple coolant grooves are formed;
a high resistance layer which is formed on the base material;
multiple heaters which are formed by thermally spraying conductors within the high resistance layer; and
multiple electrostatic chuck electrodes which are formed similarly by thermally spraying conductors within the high resistance layer. - View Dependent Claims (2, 3, 4, 5, 6)
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7. An electrostatic chuck used in a wafer processing apparatus which processes a semiconductor wafer by use of a plasma, comprising:
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a base material in which multiple coolant grooves are formed;
a high resistance layer which is formed on the base material;
a heater which is formed by thermally spraying conductors within the high resistance layer; and
multiple electrostatic chuck electrodes which are formed similarly by thermally spraying conductors within the high resistance layer, wherein the heater is formed on a circumference, the heater has, on both ends thereof, connection terminals which are connected to a power source, the connection terminals are disposed in a row along a radial direction of the base material, and a heater line which connects the connection terminals together is formed so as to have a turnaround point near places where the connection terminals are disposed.
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8. An electrostatic chuck used in a wafer processing apparatus which processes a semiconductor wafer by use of a plasma, comprising:
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a base material in which multiple coolant grooves are formed;
a high resistance layer which is formed on the base material;
a heater which is formed by thermally spraying conductors within the high resistance layer; and
multiple electrostatic chuck electrodes which are formed similarly by thermally spraying conductors within the high resistance layer, wherein the heater is formed on a circumference, the heater has, on both ends thereof, connection terminals which are connected to a power source, and a heater line which connects the connection terminals together is formed in sine wave form.
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9. A wafer processing apparatus which processes a semiconductor wafer by use of a plasma and has an electrostatic chuck for placing the semiconductor wafer thereon,
wherein the electrostatic chuck comprises a base material in which multiple coolant grooves through which a coolant is flowed are formed, a high resistance layer which is formed on the base material, multiple heaters which are formed by thermally spraying conductors within the high resistance layer, multiple electrostatic chuck electrodes which are formed similarly by thermally spraying conductors within the high resistance layer, and temperature measuring means, wherein the electrostatic chuck further comprises temperature adjusting means which adjusts outputs of the heaters on the basis of information on temperatures measured by the temperature measuring means.
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12. A plasma processing method which uses a plasma processing apparatus having an electrostatic chuck for placing a semiconductor wafer thereon, which comprises a base material in which multiple coolant grooves through which a coolant is flowed are formed, a high resistance layer which is formed on the base material, multiple heaters which are formed by thermally spraying conductors within the high resistance layer, multiple electrostatic chuck electrodes which are formed similarly by thermally spraying conductors within the high resistance layer, and temperature measuring means,
wherein power applied to the heaters, flow rate of the cooling gas and power applied to the electrostatic chuck electrodes are adjusted according to a film layer of the semiconductor wafer.
Specification