Manufacturing a semiconductor device

• US 20070004109A1
• Filed: 09/11/2006
• Published: 01/04/2007
• Est. Priority Date: 09/27/2001
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Suzuki, Noriyoshi, Asami, Taketomi, Ichijo, Mitsuhiro
• Granted Patent: US 7,442,592 B2
• Time in Patent Office: Days
• US Class Current: 438/162
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/02422 Non-crystalline insulating materials, e.g. glass, polymers
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02592 amorphous
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02672 using crystallisation enhancing elements
• CPC Class Codes: H01L 21/02686 Pulsed laser beam
• CPC Class Codes: H01L 21/3221 of silicon bodies, e.g. for gettering
• CPC Class Codes: H01L 21/3223 using cavities formed by hydrogen or noble gas ion implantation
• CPC Class Codes: H01L 27/1277 using a crystallisation promoting species, e.g. local introduction of Ni catalyst

Abstract

A technique of reducing fluctuation between elements is provided in which a semiconductor film having a crystal structure is obtained by using a metal element that accelerates crystallization of a semiconductor film and then the metal element remaining in the film is removed effectively. A barrier layer is formed on a semiconductor film having a crystal structure by plasma CVD from monosilane and nitrous oxide as material gas. In a step of forming a gettering site, a semiconductor film having an amorphous structure and containing a high concentration of noble gas element, specifically, 1×10²⁰ to 1×10²¹/cm³, is formed by plasma CVD. The film is typically an amorphous silicon film. Then gettering is conducted.

Claims

1. A method of manufacturing a semiconductor device, comprising:

forming on an insulating surface a first semiconductor film having an amorphous structure;

providing the first semiconductor film with a material comprising a metal element;

heating the first semiconductor film to crystallize the first semiconductor film after providing said material;

irradiating the crystallized first semiconductor film with laser in an oxidizing atmosphere;

removing an oxide from the crystallized first semiconductor film after the irradiation of the laser;

forming a barrier layer on the crystallized first semiconductor film;

forming a second semiconductor film on the barrier layer;

removing at least a portion of the metal element from the crystallized first semiconductor film by gettering the metal element into the second semiconductor film;

removing the second semiconductor film; and

removing the barrier layer.

2. A method of manufacturing a semiconductor device according to claim 1, wherein the barrier layer is a silicon oxynitride film with a thickness of 1 to 10 nm.

3. A method of manufacturing a semiconductor device according to claim 1, wherein the metal element is one or more kinds of elements selected from the group consisting of Fe, Ni, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au.

4. A method of manufacturing a semiconductor device according to claim 1, wherein the barrier layer is formed by plasma CVD.

5. A method of manufacturing a semiconductor device, comprising:

forming on an insulating surface a first semiconductor film having an amorphous structure;

providing the first semiconductor film with a material comprising a metal element;

heating the first semiconductor film to crystallize the first semiconductor film after providing said material;

irradiating the crystallized first semiconductor film with laser in an oxidizing atmosphere;

forming a barrier layer on the crystallized first semiconductor film;

forming a second semiconductor film containing a noble gas element on the barrier layer;

removing at least a portion of the metal element from the crystallized first semiconductor film by gettering the metal element into the second semiconductor film;

removing the second semiconductor film; and

removing the barrier layer.

6. A method of manufacturing a semiconductor device according to claim 5, wherein the barrier layer is a silicon oxynitride film with a thickness of 1 to 10 nm.

7. A method of manufacturing a semiconductor device according to claim 5, wherein the metal element is one or more kinds of elements selected from the group consisting of Fe, Ni, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au.

8. A method of manufacturing a semiconductor device according to claim 5, wherein the noble gas element is one or more kinds of elements selected from the group consisting of He, Ne, Ar, Kr, and Xe.

9. A method of manufacturing a semiconductor device according to claim 5, wherein the barrier layer is formed by plasma CVD.

10. A method of manufacturing a semiconductor device, comprising:

forming on an insulating surface a first semiconductor film having an amorphous structure;

providing the first semiconductor film with a material comprising a metal element;

heating the first semiconductor film to crystallize the first semiconductor film after providing said material;

irradiating the crystallized first semiconductor film with laser in an oxidizing atmosphere;

forming a barrier layer on the crystallized first semiconductor film;

forming a second semiconductor film containing argon at a concentration of 1×

10¹⁸/cm³ to 1×

10²²/cm³ on the barrier layer;

removing at least a portion of the metal element from the crystallized first semiconductor film by gettering the metal element into the second semiconductor film;

removing the second semiconductor film; and

removing the barrier layer.

11. A method of manufacturing a semiconductor device according to claim 10, wherein the barrier layer is a silicon oxynitride film with a thickness of 1 to 10 nm.

12. A method of manufacturing a semiconductor device according to claim 10, wherein the metal element is one or more kinds of elements selected from the group consisting of Fe, Ni, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au.

13. A method of manufacturing a semiconductor device according to claim 10, wherein the barrier layer is formed by plasma CVD.

14. A method of manufacturing a semiconductor device, comprising:

forming on an insulating surface a first semiconductor film having an amorphous structure;

providing the first semiconductor film with a material comprising a metal element;

heating the first semiconductor film to crystallize the first semiconductor film after providing said material;

irradiating the crystallized first semiconductor film with laser in an oxidizing atmosphere;

removing an oxide from the crystallized first semiconductor film after the irradiation of the laser;

forming a barrier layer on the crystallized first semiconductor film;

forming a second semiconductor film on the barrier layer without exposing the barrier layer to the air;

removing at least a portion of the metal element from the crystallized first semiconductor film by gettering the metal element into the second semiconductor film;

removing the second semiconductor film; and

removing the barrier layer.

15. A method of manufacturing a semiconductor device according to claim 14, wherein the barrier layer is a silicon oxynitride film with a thickness of 1 to 10 nm.

16. A method of manufacturing a semiconductor device according to claim 14, wherein the metal element is one or more kinds of elements selected from the group consisting of Fe, Ni, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au.

17. A method of manufacturing a semiconductor device according to claim 14, wherein the barrier layer is formed by plasma CVD.

18. A method of manufacturing a semiconductor device, comprising:

forming on an insulating surface a first semiconductor film having an amorphous structure;

providing the first semiconductor film with a material comprising a metal element;

heating the first semiconductor film to crystallize the first semiconductor film after providing said material;

irradiating the crystallized first semiconductor film with laser in an oxidizing atmosphere;

forming a barrier layer on the crystallized first semiconductor film;

forming a second semiconductor film containing a noble gas element on the barrier layer without exposing the barrier layer to the air;

removing at least a portion of the metal element from the crystallized first semiconductor film by gettering the metal element into the second semiconductor film;

removing the second semiconductor film; and

removing the barrier layer.

19. A method of manufacturing a semiconductor device according to claim 18, wherein the barrier layer is a silicon oxynitride film with a thickness of 1 to 10 nm.

20. A method of manufacturing a semiconductor device according to claim 18, wherein the metal element is one or more kinds of elements selected from the group consisting of Fe, Ni, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au.

21. A method of manufacturing a semiconductor device according to claim 18, wherein the noble gas element is one or more kinds of elements selected from the group consisting of He, Ne, Ar, Kr, and Xe.

22. A method of manufacturing a semiconductor device according to claim 18, wherein the barrier layer is formed by plasma CVD.

23. A method of manufacturing a semiconductor device, comprising:

forming on an insulating surface a first semiconductor film having an amorphous structure;

providing the first semiconductor film with a material comprising a metal element;

heating the first semiconductor film to crystallize the first semiconductor film after providing said material;

irradiating the crystallized first semiconductor film with laser in an oxidizing atmosphere;

forming a barrier layer on the crystallized first semiconductor film;

forming a second semiconductor film containing argon at a concentration of 1×

10¹⁸/cm³ to 1×

10²²/cm³ on the barrier layer without exposing the barrier layer to the air;

removing at least a portion of the metal element from the crystallized first semiconductor film by gettering the metal element into the second semiconductor film;

removing the second semiconductor film; and

removing the barrier layer.

24. A method of manufacturing a semiconductor device according to claim 23, wherein the barrier layer is a silicon oxynitride film with a thickness of 1 to 10 nm.

25. A method of manufacturing a semiconductor device according to claim 23, wherein the metal element is one or more kinds of elements selected from the group consisting of Fe, Ni, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au.

26. A method of manufacturing a semiconductor device according to claim 23, wherein the barrier layer is formed by plasma CVD.