METHOD FOR FORMING INSULATION FILM

• US 20070004204A1
• Filed: 08/18/2006
• Published: 01/04/2007
• Est. Priority Date: 02/05/1998
• Status: Active Grant

• Current Assignee: ASM Japan K.K. (ASM International NV)
• Original Assignee: ASM Japan K.K. (ASM International NV)
• Inventors: Matsuki, Nobuo, Fukazawa, Atsuki, Umemoto, Seijiro
• Granted Patent: US 7,354,873 B2
• Time in Patent Office: Days
• US Class Current: 438/680
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02214 the compound comprising silicon and oxygen
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/02348 treatment by exposure to UV light
• CPC Class Codes: H01L 21/31612 on a silicon body
• CPC Class Codes: H01L 2924/12044 OLED

Abstract

A method for forming an insulation film having filling property on a semiconductor substrate by plasma reaction includes: vaporizing a silicon-containing hydrocarbon having a Si—O bond compound to provide a source gas; introducing the source gas and a carrier gas without an oxidizing gas into a reaction space for plasma CVD processing; and forming an insulation film constituted by Si, O, H, and optionally C or N on a substrate by plasma reaction using a combination of low-frequency RF power and high-frequency RF power in the reaction space. The plasma reaction is activated while controlling the flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction space.

Claims

1. A method for forming an insulation film on a semiconductor substrate by plasma reaction, comprising the steps of:

vaporizing a silicon-containing hydrocarbon compound to provide a source gas, said silicon-containing hydrocarbon compound comprising a Si—

O bond in a molecule;

introducing a reaction gas comprising the source gas and a carrier gas into a reaction space for plasma CVD processing wherein a semiconductor substrate is placed; and

forming an insulation film constituted by Si, O, H, and optionally C or N on the substrate by plasma reaction using a combination of low-frequency RF power and high-frequency RF power in the reaction space, wherein the plasma reaction is activated while controlling the flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction space, wherein 100 msec≦

Rt,

Rt[s]9.42×

10⁷(Pr·

Ts/Ps·

Tr)r_w²d/F

wherein;

Pr;

reaction space pressure (Pa)

Ps;

standard atmospheric pressure (Pa)

Tr;

average temperature of the reaction (K)

Ts;

standard temperature (K)

r_w;

radius of the silicon substrate (m)

d;

space between the silicon substrate and the upper electrode (m)

F;

total flow volume of the reaction gas (sccm).

2. The method according to claim 1, wherein said reactive group is selected from the group consisting of alkoxy group, vinyl group, amino group, and acid radical.

3. The method according to claim 2, wherein said silicon-containing hydrocarbon compound has the formula Si_α

O<sub>α

−

1</sub>R<sub>2α

β

+2</sub>(OR′

)_β

wherein α

is an integer of 1-3, β

is 0, 1, or 2, R is H or C_1-6 hydrocarbon attached to Si, and R′

is H or C_1-6 hydrocarbon unattached to Si.

4. The method according to claim 1, further comprising adding to the reaction gas an additive gas selected from the group consisting of H₂ gas and a gas of CxHyOz wherein x=1-10, y=a natural number, and z=0, 1, or 2.

5. The method according to claim 4, wherein the additive gas is introduced at a flow rate of 10 sccm to 900 sccm.

6. The method according to claim 4, wherein the additive gas is CxHyOz wherein x=1-5, y=2x or 2x+2, and z=0 or 1 and introduced at a flow rate greater than that of the source gas.

7. The method according to claim 4, wherein the additive gas is CxHyOz which has a viscosity of 0.2-2.3 mPa·

s as measured at 20°

C.

8. The method according to claim 1, further comprising adding to the reaction gas an oxidizing gas.

9. The method according to claim 1, wherein the average temperature of the reaction (Tr) is in a range of 223K to 373K.

10. The method according to claim 1, wherein the insulation film is a silicon carbide film doped with oxygen.

11. The method according to claim 1, wherein the insulation film contains N.

12. The method according to claim 11, further comprising adding to the reaction gas an additive gas which is at least one selected from the group consisting of N₂, NH₃, and N₂O.

13. The method according to claim 12, wherein the additive gas is introduced at a flow rate of 50 sccm to 3,000 sccm.

14. The method according to claim 1, wherein the substrate has an exposed surface on which the insulation film is to be deposited, which surface has a three-dimensional structure of aluminum, tungsten, or tungsten silicon.

15. The method according to claim 14, wherein the insulation film has a thickness of 25 nm to 70 nm.

16. The method according to claim 1, wherein the insulation film has a density of 1.3 g/cm³ or higher.

17. The method according to claim 1, wherein the space between the silicon substrate and the upper electrode (d) is less than 0.014 m.

18. The method according to claim 1, wherein the substrate has a via and/or trench is formed wherein the insulation film is to be formed on a surface of the via and/or trench.

19. The method according to claim 1, wherein the substrate has an exposed surface on which the insulation film is to be formed, which surface has an aspect ratio of about 1/3 to about 1/10.

20. The method according to claim 1, wherein the average temperature of the reaction (Tr) is in a range of 323K to 373K.

21. The method according to claim 1, wherein the average temperature of the reaction (Tr) is in a range of 223K to 323K.

22. The method according to claim 1, further comprising, as a preliminary treatment, introducing an auxiliary gas selected from the group consisting of He, 02, and a gas constituted by C, H, and optionally O into the reaction space for plasma treatment of the semiconductor substrate before introducing the reaction gas.

23. The method according to claim 22, wherein the auxiliary gas is He or a combination of He and isopropyl alcohol or acetone.

24. The method according to claim 1, further comprising annealing the substrate having the insulation film, thereby curing the insulation film.

25. The method according to claim 2, wherein said silicon-containing hydrocarbon compound has the formula SiR(OR′

)₃ or (Si—

O)₃R₆ wherein R and R′

are independently H or C_1-6 hydrocarbon attached to Si.

26. A method for forming an interconnect structure, comprising the steps of:

forming a three-dimensional structure for interconnect in a substrate; and

forming an insulation layer on a surface of the three-dimensional structure using the method of claim 1.

27. The method according to claim 26, wherein the step of forming a three-dimensional structure comprises forming a layer of aluminum, tungsten, or tungsten silicon as a wiring layer and etching the layer in a pattern.

28. A method for forming an insulation film on a semiconductor substrate by plasma reaction, comprising the steps of:

performing, as a preliminary treatment, plasma treatment of a semiconductor substrate which is placed in a reaction space for plasma CVD processing, using an auxiliary gas selected from the group consisting of He, O₂, and a gas constituted by C, H, and optionally O;

vaporizing a silicon-containing hydrocarbon compound to provide a source gas;

introducing a reaction gas comprising the source gas, a carrier gas, and an additive gas into the reaction space, said additive gas being selected from the group consisting of H₂ gas and a gas of CxHyOz wherein x=1-10, y=a natural number, and z=0, 1, or 2, into the reaction space; and

forming an insulation film constituted by Si, O, H, and optionally C or N on the substrate by plasma reaction using a combination of low-frequency RF power and high-frequency RF power in the reaction space, wherein the plasma reaction is activated while controlling the flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction space, wherein 100 msec≦

Rt,

Rt[s]9.42×

10⁷(Pr·

Ts/Ps·

Tr)r_w²d/F

wherein;

Pr;

reaction space pressure (Pa)

Ps;

standard atmospheric pressure (Pa)

Tr;

average temperature of the reaction (K)

Ts;

standard temperature (K)

r_w;

radius of the silicon substrate (m)

d;

space between the silicon substrate and the upper electrode (m)

F;

total flow volume of the reaction gas (sccm).

29. The method according to claim 28, wherein the auxiliary gas is He or a combination of He and isopropyl alcohol or acetone.

30. The method according to claim 28, wherein said silicon-containing hydrocarbon compound has a formula of Si_mR_2m+2 wherein m is an integer of 1 or 2, R is H or C_1-6 hydrocarbon.

31. The method according to claim 30, wherein said silicon-containing hydrocarbon compound contains at least one reactive group selected from the group consisting of alkoxy group, vinyl group, amino group, and acid radical.

32. The method according to claim 28, wherein the additive gas is CxHyOz which has a viscosity of 0.2-2.3 mPa·

s as measured at 20°

C.

33. The method according to claim 32, wherein the additive gas is introduced at a flow rate of 10 sccm to 900 sccm.

34. The method according to claim 28, further adding an oxidizing gas to the reaction gas.

35. The method according to claim 28, wherein the average temperature of the reaction (Tr) is in a range of 223K to 373K.

36. The method according to claim 28, wherein the substrate has an exposed surface on which the insulation film is to be deposited, which surface has a three-dimensional structure of aluminum, tungsten, or tungsten silicon.

37. The method according to claim 28, wherein the substrate has a via and/or trench is formed wherein the insulation film is to be formed on a surface of the via and/or trench.

38. The method according to claim 28, further comprising annealing the substrate having the insulation film, thereby curing the insulation film.

39. A method for forming an interconnect structure, comprising the steps of:

forming a three-dimensional structure for interconnect in a substrate; and

forming an insulation layer on a surface of the three-dimensional structure using the method of claim 28.

40. The method according to claim 39, wherein the step of forming a three-dimensional structure comprises forming a layer of aluminum, tungsten, or tungsten silicon as a wiring layer and etching the layer in a pattern.