Filter function-equipped optical sensor and flame sensor

• US 20070008539A1
• Filed: 03/23/2004
• Published: 01/11/2007
• Est. Priority Date: 03/25/2003
• Status: Active Grant

• Current Assignee: UV Craftory Co., Ltd. (Nikkiso Company Limited)
• Original Assignee: UV Craftory Co., Ltd. (Nikkiso Company Limited)
• Inventors: Amano, Hiroshi, Kamiyama, Satoshi, Hirano, Akira, Akasaki, Isamu
• Granted Patent: US 7,361,948 B2
• Time in Patent Office: Days
• US Class Current: 356/432
• CPC Class Codes: G02B 5/284 of etalon type comprising a resonant cavity other than a thin solid film, e.g. gas, air, solid plates etalons for fibre optic multiplexing G02B6/29358; etalons for spectral measurement G01J3/26

Abstract

In order to provide a filter device capable of maintaining stable optical characteristics for an extended period of time and to provide also a photosensor using the filter device, a photosensor having a filter function includes a filter device having a colored glass filter and configured for permitting transmission of light of a predetermined wavelength range including a detection target wavelength range and a light receiving device for receiving the light transmitted through the filter device. The filter device includes a first interference filter structure comprised of a plurality of light transmitting layers stacked on each other, the first interference filter structure being deposited on a face of the colored glass filter. The light receiving device includes a semiconductor photodetector structure having one or more semiconductor layers, a light receiving area being formed in the one or more semiconductor layers within the semiconductor photodetector structure. The one or more semiconductor layers forming the semiconductor photodetector structure contain In_xAl_yGa_1-x-yN (0≦x≦0.21, 0≦y≦1).

Claims

1-9. -9. (canceled)

10. A photosensor having a filter function, comprising:

a filter device having a colored glass filter and configured for permitting transmission of light of a predetermined wavelength range including a detection target wavelength range; and

a light receiving device for receiving the light transmitted through the filter device;

wherein said filter device includes a first interference filter structure comprised of a plurality of light transmitting layers stacked on each other, the first interference filter structure being deposited on a face of the colored glass filter;

said light receiving device includes a semiconductor photodetector structure having one or more semiconductor layers, a light receiving area being formed in the one or more semiconductor layers within the semiconductor photodetector structure; and

said one or more semiconductor layers forming the semiconductor photodetector structure contain In_xAl_yGa_1-x-yN (0≦

x≦

0.21, 0≦

y≦

1)

11. The photosensor having a filter function according to claim 10, wherein said filter device further includes a second interference filter structure comprised of a plurality of light transmitting layers stacked on each other, the second interference filter structure being deposited on another face of the colored glass filter opposite to the one face on which said first interference structure is deposited.

12. The photosensor having a filter function according to claim 10, wherein said interference filter structure contains at least one of SiO₂ and HfO₂, with an exposed surface of the interference filter structure being formed of the oxide.

13. The photosensor having a filter function according to claim 10, wherein a longer wavelength end wavelength of said detection target wavelength range corresponding to an absorption end wavelength of said light receiving area is set near a longer wavelength end wavelength of a light transmission wavelength range of said filter device;

and

a first sensitivity for a predetermined first wavelength included within said detection target wavelength range has a value 10,000 times or more greater than a value of a second sensitivity for a second wavelength which is outside said detection target wavelength range and which is 50 nm longer than said first wavelength.

14. The photosensor having a filter function according to claim 13, wherein said longer wavelength end wavelength of said detection target wavelength range is 400 mm±

20 nm.

15. The photosensor having a filter function according to claim 13, wherein said longer wavelength end wavelength of said detection target wavelength range is 365 nm±

20 nm.

16. The photosensor having a filter function according to claim 13, wherein said longer wavelength end wavelength of said detection target wavelength range is 315 nm±

20 nm.

17. The photosensor having a filter function according to claim 13, wherein said longer wavelength end wavelength of said detection target wavelength range is 280 nm±

20 nm.

18. A flame sensor comprising the photosensor having a filter function according to claim 10, the photosensor being sealed with nitrogen gas or inert gas.

19. A flame sensor comprising the photosensor having a filter function according to claim 11, the photosensor being sealed with nitrogen gas or inert gas.

20. A flame sensor comprising the photosensor having a filter function according to claim 12, the photosensor being sealed with nitrogen gas or inert gas.

21. A flame sensor comprising the photosensor having a filter function according to claim 13, the photosensor being sealed with nitrogen gas or inert gas.

22. A flame sensor comprising the photosensor having a filter function according to claim 14, the photosensor being sealed with nitrogen gas or inert gas.

23. A flame sensor comprising the photosensor having a filter function according to claim 15, the photosensor being sealed with nitrogen gas or inert gas.

24. A flame sensor comprising the photosensor having a filter function according to claim 16, the photosensor being sealed with nitrogen gas or inert gas.

25. A flame sensor comprising the photosensor having a filter function according to claim 17, the photosensor being sealed with nitrogen gas or inert gas.