Semiconductor Device Including Regions of Band-Engineered Semiconductor Superlattice to Reduce Device-On Resistance
First Claim
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1. A semiconductor device comprising:
- a substrate;
spaced apart source and drain regions defining a channel region therebetween in said substrate;
said substrate having a plurality of spaced apart superlattices in the drain region;
each superlattice comprising a plurality of stacked groups of layers with each group comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer thereon, and with the at least one non-semiconductor monolayer being constrained within a crystal lattice of adjacent base semiconductor portions.
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Abstract
A semiconductor device may include a substrate and spaced apart source and drain regions defining a channel region therebetween in the substrate. The substrate may have a plurality of spaced apart superlattices in the channel and/or drain regions. Each superlattice may include a plurality of stacked groups of layers, with each group including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer thereon. The at least one non-semiconductor monolayer may be constrained within a crystal lattice of adjacent base semiconductor portions.
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Citations
27 Claims
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1. A semiconductor device comprising:
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a substrate;
spaced apart source and drain regions defining a channel region therebetween in said substrate;
said substrate having a plurality of spaced apart superlattices in the drain region;
each superlattice comprising a plurality of stacked groups of layers with each group comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer thereon, and with the at least one non-semiconductor monolayer being constrained within a crystal lattice of adjacent base semiconductor portions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A semiconductor device comprising:
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a substrate;
spaced apart source and drain regions defining a channel region therebetween in said substrate;
said substrate having a plurality of spaced apart superlattices in the channel region; and
each superlattice comprising a plurality of stacked groups of layers with each group comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer thereon, and with the at least one non-semiconductor monolayer being constrained within a crystal lattice of adjacent base semiconductor portions. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27)
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Specification