Process for depositing low dielectric constant materials
First Claim
1. An alkoxysilylmethane of the formula (R2O)4-c-b(H3Si)bCR1c where R2 is methyl, ethyl or propyl, R1 is H or D, c is 0, 1, or 2, b is 1, 2, or 3, and c+b=1, 2, or 3.
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Abstract
Chemical vapor deposition processes result in films having low dielectric constants when suitable chemical precursors are utilized. Preferred chemical precursors include siloxanes, (fluoroalkyl)fluorosiloxanes, (fluoroalkyl)silanes, (alkyl)fluorosilanes, (fluoroalkyl)fluorosilanes, alkylsiloxysilanes, alkoxysilanes, alkylalkoxysilanes, silylmethanes, alkoxysilylmethanes, alkylalkoxysilylmethanes, alkoxymethanes, alkylalkoxymethanes, and mixtures thereof. The precursors are particularly suited to thermal CVD for producing low dielectric constant films at relatively low temperatures, particularly without the use of additional oxidizing agents. Such films are useful in the microelectronics industry.
43 Citations
20 Claims
- 1. An alkoxysilylmethane of the formula (R2O)4-c-b(H3Si)bCR1c where R2 is methyl, ethyl or propyl, R1 is H or D, c is 0, 1, or 2, b is 1, 2, or 3, and c+b=1, 2, or 3.
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11. An alkylalkoxysilylmethane of the formula (R2O)4-x-y-zR2z(H3Si)yCR1x where each R2 is independently methyl, ethyl or propyl, R1 is H or D, x is 0 or 1, y is 1 or 2;
- z is 1 or 2, and x+y+z=2 or 3.
- View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
Specification