×

Process for depositing low dielectric constant materials

  • US 20070032676A1
  • Filed: 10/16/2006
  • Published: 02/08/2007
  • Est. Priority Date: 02/08/2000
  • Status: Active Grant
First Claim
Patent Images

1. An alkoxysilylmethane of the formula (R2O)4-c-b(H3Si)bCR1c where R2 is methyl, ethyl or propyl, R1 is H or D, c is 0, 1, or 2, b is 1, 2, or 3, and c+b=1, 2, or 3.

View all claims
  • 0 Assignments
Timeline View
Assignment View
    ×
    ×