Methods for forming layers within a MEMS device using liftoff processes to achieve a tapered edge

• US 20070041703A1
• Filed: 08/18/2006
• Published: 02/22/2007
• Est. Priority Date: 08/19/2005
• Status: Active Grant

• Current Assignee: Snaptrack Incorporated (Qualcomm, Inc.)
• Original Assignee: Qualcomm MEMS Technologies Incorporated (Qualcomm, Inc.)
• Inventors: Wang, Chun-Ming
• Granted Patent: US 7,486,867 B2
• Time in Patent Office: Days
• US Class Current: 385/147
• CPC Class Codes: B81B 2201/047 Optical MEMS not provided for in B81B2201/042 - B81B2201/045
• CPC Class Codes: B81B 2203/0163 Spring holders
• CPC Class Codes: B81B 2203/019 characterized by their profile
• CPC Class Codes: B81B 2203/0307 Anchors
• CPC Class Codes: B81B 2203/053 Translation according to an axis perpendicular to the substrate
• CPC Class Codes: B81B 3/0072 For controlling internal stress or strain in moving or flexible elements, e.g. stress compensating layers
• CPC Class Codes: B81C 1/00142 Bridges deformable micromirrors G02B26/0841
• CPC Class Codes: B81C 1/00666 Treatments for controlling internal stress or strain in MEMS structures
• CPC Class Codes: B81C 2201/0167 by adding further layers of materials having complementary strains, i.e. compressive or tensile strain
• CPC Class Codes: G02B 26/001 based on interference in an adjustable optical cavity interference filters G02B5/28; devices or arrangements using multiple reflections in spectrometry or monochromators G01J3/26
• CPC Class Codes: G02B 26/0841 the reflecting element being moved or deformed by electrostatic means
• CPC Class Codes: Y10S 359/90 Methods

Abstract

Certain MEMS devices include layers patterned to have tapered edges. One method for forming layers having tapered edges includes the use of an etch leading layer. Another method for forming layers having tapered edges includes the deposition of a layer in which the upper portion is etchable at a faster rate than the lower portion. Another method for forming layers having tapered edges includes the use of multiple iterative etches. Another method for forming layers having tapered edges includes the use of a liftoff mask layer having an aperture including a negative angle, such that a layer can be deposited over the liftoff mask layer and the mask layer removed, leaving a structure having tapered edges.

Claims

1. A method of fabricating a MEMS device, comprising:

forming an electrode layer over a substrate;

forming a sacrificial layer over the electrode layer;

patterning the sacrificial layer to form at least one tapered aperture extending through the sacrificial layer;

forming a mask layer comprising an aperture overlying the tapered aperture extending through the sacrificial layer, the mask layer comprising an overhanging portion extending around the aperture in the mask layer;

depositing a support layer over the mask layer;

removing the mask layer via a liftoff process, thereby forming a support structure located at least partially within the tapered aperture extending through the sacrificial layer; and

forming a movable layer adjacent the support structure.

2. The method of claim 1, wherein the support structure comprises a tapered edge.

3. The method of claim 1, wherein the support layer is deposited directly over a sidewall of the tapered aperture extending through the sacrificial layer.

4. The method of claim 1, additionally comprising performing a release etch to remove the sacrificial layer, forming an air gap located between the electrode layer and the movable layer.

5. The method of claim 1, forming the movable layer comprises:

forming a reflective sublayer over the sacrificial layer; and

forming a mechanical sublayer over the reflective sublayer

6. The method of claim 1, wherein the MEMS device comprises an interferometric modulator.

7. The method of claim 1, wherein the movable layer is formed after forming the support structure.

8. The method of claim 1, wherein the mask layer comprises a photoresist material.

9. The method of claim 8, wherein the mask layer comprises a bilayer photoresist.

10. The method of claim 8, wherein forming the mask layer comprises:

depositing a layer of liftoff material;

depositing a layer of photoresist material;

patterning the photoresist material to form an upper aperture extending through the photoresist material; and

etching the liftoff material underlying the upper aperture extending though the photoresist material, wherein the etching comprises undercutting the layer of photoresist material to form the overhanging portion of the mask layer, thereby forming the aperture extending through the mask layer.

11. The method of claim 8, wherein patterning the sacrificial layer to form a tapered aperture additionally comprises using the mask layer to pattern the sacrificial layer to form a tapered aperture.

12. The method of claim 1, wherein the support layer is deposited via an evaportation or sputtering process.

13. The method of claim 1, additionally comprising exposing the support layer to ultrasonic energy prior to removing the mask layer via a liftoff process.

14. A MEMS device formed by the method of claim 1.

15. A method of fabricating a MEMS device, comprising:

forming an electrode layer over a substrate;

forming a mask over the electrode layer, wherein the mask comprises a negative angle extending about the periphery of the mask;

depositing a layer of sacrificial material over the mask;

removing the mask via a liftoff process, forming a sacrificial layer comprising a tapered aperture;

forming a support structure located at least partially within the tapered aperture; and

forming a movable layer adjacent the support structure.

16. The method of claim 15, additionally comprising performing a release etch to remove the sacrificial layer, forming an air gap located between the movable layer and the electrode layer.

17. The method of claim 15, wherein forming the support structure comprises:

depositing a layer of support material over the patterned sacrificial layer; and

patterning the layer of support material to form a support structure located at least partially within the aperture, wherein the movable layer is deposited over the support structure.

18. The method of claim 15, wherein the mask comprises a photoresist material.

19. The method of claim 18, wherein the mask comprises a bilayer photoresist.

20. The method of claim 18, wherein forming the mask comprises:

depositing a layer of liftoff material;

depositing a layer of photoresist material;

patterning the photoresist material to form an aperture extending through the photoresist material; and

etching the liftoff material underlying the aperture extending though the photoresist material, wherein the etching comprises undercutting the layer of photoresist material to form an overhanging portion of the mask layer.

21. The method of claim 15, wherein the layer of sacrificial material is deposited via physical vapor deposition process.

22. A MEMS device formed by the method of claim 15.

23. A method of fabricating a MEMS device, comprising

forming a lower electrode layer over a substrate;

forming a sacrificial layer over the electrode layer;

forming a mask layer overlying the sacrificial layer, the mask layer comprising an aperture having an overhanging portion extending around an edge of the aperture;

depositing a layer of electrode material over the mask layer;

removing the mask layer via a liftoff process, thereby forming at least an isolated electrode member having an outwardly tapering edge.

24. The method of claim 23, additionally comprising:

forming a second sacrificial layer overlying the isolated electrode member;

patterning the second sacrificial layer to form an aperture exposing at least a portion of the isolated electrode member; and

depositing a mechanical layer over the second sacrificial layer.

25. The method of claim 23, additionally comprising removing the sacrificial layer via a release etch, thereby forming an air gap located between the isolated electrode member and the lower electrode layer.

26. The method of claim 23, wherein the mask layer comprises a photoresist material.

27. The method of claim 23, wherein the layer of electrode material is deposited via an evaportation or sputtering process.

28. A MEMS device formed by the method of claim 23.