Nanoelectronic sensor with integral suspended micro-heater

• US 20070045756A1
• Filed: 07/18/2006
• Published: 03/01/2007
• Est. Priority Date: 09/04/2002
• Status: Abandoned Application

• Current Assignee: Nanomix Incorporated (CJY Holdings Ltd.)
• Original Assignee: Nanomix Incorporated (CJY Holdings Ltd.)
• Inventors: Wang, Qian, Skarupo, Sergei, Chang, Ying-Lan, Valcke, Christian, Star, Alexander, Gabriel, Jean-Christophe
• Application Number:
  US11/488,465
• Publication Number:
  US 20070045756A1
• Time in Patent Office: Days
• US Class Current: 257/414
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 15/00 Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
• CPC Class Codes: G01K 2211/00 Thermometers based on nanotechnology
• CPC Class Codes: G01K 5/486 using microstructures, e.g. made of silicon G01K7/015, G01K7/028, G01K7/226, G01K17/006 take precedence

Abstract

A nanoelectronic sensing device includes a substrate, a nanostructure element disposed adjacent the substrate, and at least a conductive element electrically connected to the nanostructure element. The device is configured to heat at least a portion of the sensor structure including the nanostructure element. In certain embodiments, the nanostructure element comprises at least one nanotube, the nanotube being electrically connected to at least two conductors so as to permit an electric current on the order of 10 microAmps or greater to be passed through the nanotube, causing the nanotube to heat up relative to the substrate. In alternative embodiments, the sensing device includes a platform or membrane which is at least partially thermally isolated by one or more cavities, the platform supporting at least the nanostructure element adjacent to a microheater element. The heating of the sensor structure may be employed, for example, for thermoregulation, to accelerate and/or increase sensor response, and to improve other sensor characteristics.

Claims

1. A nanoelectronic sensing device having a sensitivity for at least one analyte of interest, comprising:

a substrate,

a nanostructure element disposed adjacent the substrate; and

at least one conductive element electrically connected to the nanostructure element;

wherein the device is configured to heat at least a portion of the sensor structure including the nanostructure element.

2. The sensing device of claim 1, further comprising at least a heating element disposed adjacent the nanostructure element and providing heat to the nanostructure element.

3. The sensing device of claim 1, wherein the substrate is configured to form at least one cavity adjacent the nanostructure element and providing thermal isolation for the nanostructure element from at least a portion of the substrate.

4. Methods, devices, assemblies, subassemblies, kits, and software products substantially in the spirit of the inventive embodiments described herein.

5. A transistor device;

comprising;

a microhotplate including;

a substrate having a bulk portion and a suspended portion, the suspended portion connected to the bulk portion so as to be substantially thermally isolated from the bulk portion;

at least one heating element disposed adjacent the suspended portion;

a transistor including;

a semiconducting channel comprising one or more nanostructure elements, the channel disposed adjacent the suspended portion and configured so as to be heated by the heating element;

at least a pair of contacts electrically communicating with the channel;

at least one gate electrode configured to electrically influence the channel.

6. The transistor device of claim 5, wherein the one or more nanostructure elements comprise one or more carbon nanotubes.

7. The transistor device of claim 5, further comprising a temperature sensor.

8. The transistor device of claim 7, further comprising a controller configured to:

control the heat produced by the heating element;

receive a temperature signal from the temperature sensor; and

regulate the heat produced by the heating element to maintain a target temperature of the channel.

9. The transistor device of claim 5, wherein the transistor device is configured as a sensor having a sensitivity to an analyte of interest.

10. A sensor device for sensing at least an analyte of interest;

comprising;

a microhotplate including;

a substrate having a bulk portion and a suspended portion, the suspended portion connected to the bulk portion so as to be substantially thermally isolated from the bulk portion;

at least one heating element disposed adjacent the suspended portion;

a nanosensor including;

at least one nanostructure element disposed adjacent the suspended portion and configured so as to be heated by the heating element;

one or more contacts configured to electrically communicate with the nanostructure element;

a recognition material disposed in operative association with the nanostructure element and configured to interact with the analyte of interest.

11. The sensor device of claim 10, wherein the at least one nanostructure element comprises at least one carbon nanotube.

12. A sensor device for sensing at least an analyte of interest, comprising:

a substrate,

at least one elongate nanostructure element having a conductivity and disposed adjacent the substrate, wherein at least a portion of the elongate nanostructure element is space apart from the substrate;

one or more conductive elements electrically connected to the nanostructure element and configured to permit an electrical current to be conducted along the elongate nanostructure element so as to dissipate energy as heat in at least a portion of the elongate nanostructure element; and

a recognition material disposed in operative association with the nanostructure element and configured to interact with the analyte of interest.

13. The sensor device of claim 12, further comprising a gate electrode disposed to electrically influence the elongate nanostructure element;

wherein the substrate has a top surface and a slot in the top surface;

wherein the conductive elements comprise a pair of contacts adjacent the top surface on opposing sides of the slot; and

wherein the elongate nanostructure element is arranged to span the slot and to be in electrical communication with each of the pair of contacts.

14. The sensor device of claim 13, wherein the slot has a bottom surface disposed spaced-apart from the elongate nanostructure element, and wherein the gate electrode is disposed adjacent the bottom surface.

15. The sensor device of claim 12, wherein the elongate nanostructure element comprises one or more carbon nanotubes.

16. A transistor device, comprising:

a substrate;

at least one elongate nanostructure element having a conductivity and disposed adjacent the substrate, wherein at least a portion of the elongate nanostructure element is space apart from the substrate;

one or more conductive elements electrically connected to the nanostructure element and configured to permit an electrical current to be conducted along the elongate nanostructure element so as to dissipate energy as heat in at least a portion of the elongate nanostructure element; and

a gate electrode disposed to electrically influence the elongate nanostructure element.

17. The transistor device of claim 16:

wherein the substrate has a top surface and a slot in the top surface;

wherein the conductive elements comprise a pair of contacts adjacent the top surface on opposing sides of the slot; and

wherein the elongate nanostructure element is arranged to span the slot and to be in electrical communication with each of the pair of contacts.

18. The transistor device of claim 16, wherein the slot has a bottom surface disposed spaced-apart from the elongate nanostructure element, and wherein the gate electrode is disposed adjacent the bottom surface.

19. The sensor device of claim 16, wherein the elongate nanostructure element comprises one or more carbon nanotubes.