ELECTROOPTIC DEVICE, SUBSTRATE THEREFOR, METHOD FOR MAKING THE ELECTROOPTIC DEVICE, AND ELECTRONIC APPARATUS

• US 20070058099A1
• Filed: 08/03/2006
• Published: 03/15/2007
• Est. Priority Date: 09/09/2005
• Status: Active Grant

• Current Assignee: Seiko Epson Corporation (Seiko Group)
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Eguchi, Tsukasa
• Granted Patent: US 7,456,922 B2
• Time in Patent Office: Days
• US Class Current: 349/43
• CPC Class Codes: G02F 1/133345 Insulating layers G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: H10K 50/856 comprising reflective means
• CPC Class Codes: H10K 59/123 Connection of the pixel electrodes to the thin film transistors [TFT]
• CPC Class Codes: H10K 59/124 Insulating layers formed between TFT elements and OLED elements
• CPC Class Codes: H10K 59/878 comprising reflective means

Abstract

An electrooptic device includes a substrate and a pluralty of pixel units. Each pixel unit includes a pixel electrode; an active element for active control of the pixel electrode; a conductive layer that is disposed below the pixel electrode and that connects the active element to the pixel electrode; an organic resin film that provides interlayer insulation between the active element and the pixel electrode and between the conductive layer and the pixel electrode, the organic resin film having a small hole that overlaps part of the conductive layer in a plan view; a first inorganic insulating film disposed between the organic resin film and the conductive layer and between the organic resin film and the active element such that the first inorganic insulating film overlaps the conductive layer and the active element in a plan view, the first inorganic insulating film having a first hole inside the small hole in a plan view, the first hole having a diameter equal to or smaller than the bottom of the small hole; and a second inorganic insulating film disposed between the organic resin film and the pixel electrode, the second inorganic insulating film having a second hole that is continuous to the first hole and that forms a contact hole together with the first hole. The pixel electrode is formed in a continuous manner from inside the contact hole to outside the contact hole such that the pixel electrode is electrically connected to the conductive layer exposed inside the first hole.

Claims

1. An electrooptic device comprising:

a substrate;

a plurality of pixel units, each including;

a pixel electrode;

an active element for active control of the pixel electrode;

a conductive layer that is disposed below the pixel electrode and that connects the active element to the pixel electrode;

an organic resin film that provides interlayer insulation between the active element and the pixel electrode and between the conductive layer and the pixel electrode, the organic resin film having a small hole that overlaps part of the conductive layer in a plan view;

a first inorganic insulating film disposed between the organic resin film and the conductive layer and between the organic resin film and the active element such that the first inorganic insulating film overlaps the conductive layer and the active element in a plan view, the first inorganic insulating film having a first hole inside the small hole in a plan view, the first hole having a diameter equal to or smaller than the bottom of the small hole; and

a second inorganic insulating film disposed between the organic resin film and the pixel electrode, the second inorganic insulating film having a second hole that is continuous to the first hole and that forms a contact hole together with the first hole,

wherein the pixel electrode is formed in a continuous manner from inside the contact hole to outside the contact hole such that the pixel electrode is electrically connected to the conductive layer exposed inside the first hole.

2. The electrooptic device according to claim 1, wherein the organic resin film is composed of photosensitive resin.

3. The electrooptic device according to claim 1, wherein at least one of the first and second inorganic insulating films is composed of a material that contains nitrogen.

4. The electrooptic device according to claim 1, each pixel unit further including:

a counter electrode that faces the pixel electrode; and

an electrooptic material interposed between the counter electrode and the pixel electrode.

5. The electrooptic device according to claim 4, wherein the electrooptic material is composed of an organic EL.

6. The electrooptic device according to claim 1, each pixel unit further including a reflector film disposed above the organic resin film and below the second inorganic insulating film, the reflector film overlapping part of the second inorganic insulating film and the pixel electrode in a plan view.

8. An electronic apparatus comprising the electrooptic device according to claim 1.

7. A substrate for an electrooptic device, comprising:

a substrate; and

a plurality of pixel units on the substrate, each including;

a pixel electrode;

an active element for active control of the pixel electrode;

a conductive layer that is formed below the pixel electrode and that connects the active element to the pixel electrode;

an organic resin film that provides interlayer insulation between the active element and the pixel electrode and between the conductive layer and the pixel electrode, the organic resin film having a small hole that overlaps part of the conductive layer in a plan view;

a first inorganic insulating film disposed between the organic resin film and the conductive layer and between the organic resin film and the active element such that the first inorganic insulating film overlaps the conductive layer and the active element in a plan view, the first inorganic insulating film having a first hole inside the small hole in a plan view, the first hole having a diameter equal to or smaller than the bottom of the small hole; and

a second inorganic insulating film disposed between the organic resin film and the pixel electrode, the second inorganic insulating film having a second hole that is continuous to the first hole and that forms a contact hole together with the first hole,

wherein the pixel electrode is formed in a continuous manner from inside the contact hole to outside the contact hole such that the pixel electrode is electrically connected to the conductive layer exposed inside the first hole.

9. A method for making an electrooptic device, comprising:

a first step of forming an active element for each of pixel units on a substrate;

a second step of forming a conductor layer electrically connected to the active element;

a third step of forming a first inorganic insulating film above the conductive layer and the active element such that the first inorganic insulating film overlaps the active element and the conductive layer in a plan view;

a fourth step of forming an organic resin film on the first inorganic insulating film;

a fifth step of forming a small hole that penetrates the organic resin film and reaches a surface of the first inorganic insulating film, the small hole being formed in an organic resin film at a position that overlaps part of the conductive layer in a plan view;

a sixth step of forming a second inorganic insulating film on the organic resin film so as to cover a sidewall of the small hole;

a seventh step of forming a first hole inside the small hole, the first hole penetrating the first and second inorganic insulating films to reach a surface of the conductive layer; and

an eighth step of forming a pixel electrode on the second inorganic insulating film and the conductive layer exposed in the first hole.

10. The method according to claim 9, wherein:

in the fourth step, the organic resin film is formed using a photosensitive resin; and

in the fifth step, the small hole is formed by exposing and developing the organic resin film.

11. The method according to claim 9, further comprising:

after the fourth step and before the sixth step, a step of forming a reflector film on the organic resin film such that the reflector film partly overlaps the pixel electrode, wherein in the sixth step, the second inorganic insulating film is formed on the reflector film.