Semiconductor device and method for manufacturing thereof

• US 20070089811A1
• Filed: 10/25/2006
• Published: 04/26/2007
• Est. Priority Date: 10/26/2005
• Status: Active Grant

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Renesas Technology Corporation (Renesas Electronics Corporation)
• Inventors: Nakamura, Hiroyuki, Ikeda, Osamu, Oka, Hiroi, Okamoto, Masahide, Kagii, Hidemasa
• Granted Patent: US 7,579,677 B2
• Time in Patent Office: Days
• US Class Current: 148/536
• CPC Class Codes: C22F 1/08 of copper or alloys based thereon
• CPC Class Codes: H01L 2224/2612 Auxiliary members for layer connectors, e.g. spacers
• CPC Class Codes: H01L 2224/2908 being stacked
• CPC Class Codes: H01L 2224/29101 the principal constituent melting at a temperature of less than 400°C
• CPC Class Codes: H01L 2224/29109 Indium [In] as principal constituent
• CPC Class Codes: H01L 2224/29111 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/2919 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/32507 comprising an intermetallic compound
• CPC Class Codes: H01L 2224/37147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/37155 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/3754 Coating
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73221 Strap and wire connectors
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/83101 as prepeg comprising a layer connector, e.g. provided in an insulating plate member
• CPC Class Codes: H01L 2224/83455 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/83801 : Soldering or alloying
• CPC Class Codes: H01L 2224/84801 : Soldering or alloying
• CPC Class Codes: H01L 23/49513 : having bonding material between chip and die pad
• CPC Class Codes: H01L 23/49582 : Metallic layers on lead frames
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/30 : of a plurality of layer connectors
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/33 : of a plurality of layer connectors
• CPC Class Codes: H01L 24/37 : of an individual strap connector
• CPC Class Codes: H01L 24/40 : of an individual strap connector
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/84 : using a strap connector
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01012 : Magnesium [Mg]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01051 : Antimony [Sb]
• CPC Class Codes: H01L 2924/01063 : Europium [Eu]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/0132 : Binary Alloys
• CPC Class Codes: H01L 2924/01327 : Intermediate phases, i.e. intermetallics compounds
• CPC Class Codes: H01L 2924/0133 : Ternary Alloys
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/15747 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/351 : Thermal stress
• CPC Class Codes: H01L 2924/3512 : Cracking

Abstract

In a power semiconductor device, a joint between the power semiconductor element and frame plated with Ni is composed of a laminated structure comprising, from the power semiconductor element side, an intermetallic compound layer having a melting point of 260° C. or higher, a Cu layer, a metal layer having a melting point of 260° C. or higher, a Cu layer and an intermetallic layer having a melting point of 260° C. or higher. The structure of the joint buffers the stress generated by the secondary mounting and temperature cycle at the bond for the semiconductor element and the frame having a large difference in thermal expansion coefficient from each other.

Claims

1. A semiconductor device having a semiconductor element and a frame to which the semiconductor element is bonded,

wherein said frame is plated with Ni on the surface thereof, and

a joint between the semiconductor element and the flame has, from the semiconductor element side, a laminated structure comprising:

a first intermetallic compound layer having a melting point of 260°

C. or higher;

a first Cu layer;

a metal layer having a melting point of 260°

C. or higher;

a second Cu layer; and

a second intermetallic compound layer having a melting point of 260°

C. or higher.

2. The semiconductor device according to claim 1,

wherein the first intermetallic compound layer or the second intermetallic compound layer is formed by allowing at least one of Sn, Sn—

Cu-based, Sn—

Ag-based, Sn—

Ag—

Cu-based, In, In—

Sn-based, In—

Ag-based, and In—

Cu-based lead-free solders having a melting point of 260°

C. or lower to react with the first Cu layer or second Cu layer.

3. The semiconductor device according to claim 1, the metal layer comprises at least one of Invar alloy, a Cu—

Mo alloy, Ti, Mo, and W.

4. The semiconductor device according to claim 1,

wherein the metal layer comprises at least one of Al, Mg, Ag, Zn, and Cu.

5. A method for manufacturing a semiconductor device having a semiconductor element and a frame to which the semiconductor element is bonded,

wherein said frame is plated with Ni on the surface thereof,

said method comprising the steps of:

bonding the semiconductor element and the frame using a composite foil comprising a Cu layer on both sides of a metal layer having a melting point of 260°

C. or higher and a lead-free solder layer having a melting point of 260°

C. or lower provided on the Cu layer;

further allowing the Cu layer and the lead-free solder layer to react by heating; and

forming an intermetallic compound having a melting point of 260°

C. or higher to render the joint non-meltable at 260°

C.

6. The method for manufacturing the semiconductor device according to claim 5,

wherein the lead-free solder layer comprises at least one of Sn, Sn—

Cu-based, Sn—

Ag-based, Sn—

Ag-Cu-based, In, In—

Sn-based, In—

Ag-based, and In—

Cu-based lead-free solders having a melting point of 260°

C. or lower.

7. The method for manufacturing the semiconductor device according to claim 5,

wherein the metal layer comprises at least one of an Invar alloy, a Cu—

Mo alloy, Ti, Mo, and W.

8. The method for manufacturing the semiconductor device according to claim 5,

wherein the metal layer comprises at least one of Al, Mg, Ag, Zn, and Cu.

9. The method for manufacturing the semiconductor device according to claim 5,

wherein the intermetallic compound is formed in an N₂ atmosphere.

10. The method for manufacturing the semiconductor device according to claim 5,

wherein the intermetallic compound is formed in an N₂+H₂ atmosphere.