High power top emitting vertical cavity surface emitting laser
First Claim
1. A metal contact laser device comprising:
- a substrate, a plurality of vertical cavity surface emitting laser elements formed on said substrate, each of said VCSEL elements having an effective laser active region with a respective defined center point and a defined lateral size, said defined lateral size of each VCSEL element being equal to or less than 30 μ
m, wherein a pitch between the center points of nearest neighbors of said VCSEL elements is equal to or less than 80 μ
m.
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Accused Products
Abstract
A laser device including a VCSEL array provides an increased power density at a high wall-plug efficiency in that the lateral design parameters are appropriately selected on the basis of a relationship that has been established for a specified vertical design, a corresponding process technology and specified operating conditions. Thus, the total output power, the power density, and the efficiency may be optimized independently from other design criteria and application requirements by tuning only the lateral size of the individual VCSEL elements and the pitch of nearest neighbors of the elements within the array. Hence, for a lateral size of less than 30 μm and a pitch of less than 80 μm, a highly efficient VCSEL array can be provided with a high power density, thereby optimizing manufacturing costs for the output power per chip area.
28 Citations
29 Claims
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1. A metal contact laser device comprising:
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a substrate, a plurality of vertical cavity surface emitting laser elements formed on said substrate, each of said VCSEL elements having an effective laser active region with a respective defined center point and a defined lateral size, said defined lateral size of each VCSEL element being equal to or less than 30 μ
m,wherein a pitch between the center points of nearest neighbors of said VCSEL elements is equal to or less than 80 μ
m. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A method of adjusting a power density of a metal contact VCSEL array, the method comprising:
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establishing a relationship for a specified test array between an effective lateral size of a laser active region of VCSEL elements of a defined design, a pitch of nearest neighbors of said VCSEL elements when arranged according to said specified test array and a power output by said test array, determining positions of VCSEL elements having said defined design within said VCSEL array on the basis of said relationship, and manufacturing said VCSEL array with VCSEL elements of said defined design by forming the VCSEL elements substantially at said determined positions. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28, 29)
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Specification