Apparatus and method for pressure bonding and method for manufacturing semiconductor device

• US 20070107827A1
• Filed: 11/01/2006
• Published: 05/17/2007
• Est. Priority Date: 11/11/2005
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kusumoto, Naoto, Takahashi, Hidekazu
• Granted Patent: US 7,635,014 B2
• Time in Patent Office: Days
• US Class Current: 156/64
• CPC Class Codes: B32B 2309/12 Pressure
• CPC Class Codes: B32B 2309/72 For measuring or regulating, e.g. systems with feedback loops
• CPC Class Codes: B32B 2519/02 RFID tags
• CPC Class Codes: B32B 41/00 Arrangements for controlling or monitoring lamination processes; Safety arrangements
• CPC Class Codes: H01L 21/67144 Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/6835 used as a support during build up manufacturing of active devices
• CPC Class Codes: H01L 2221/68368 used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
• CPC Class Codes: H01L 2224/2919 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/838 Bonding techniques
• CPC Class Codes: H01L 24/75 Apparatus for connecting with bump connectors or layer connectors
• CPC Class Codes: H01L 24/83 using a layer connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01004 Beryllium [Be]
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01012 Magnesium [Mg]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 Silicon [Si]
• CPC Class Codes: H01L 2924/01015 Phosphorus [P]
• CPC Class Codes: H01L 2924/01018 : Argon [Ar]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01025 : Manganese [Mn]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/0104 : Zirconium [Zr]
• CPC Class Codes: H01L 2924/01041 : Niobium [Nb]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01044 : Ruthenium [Ru]
• CPC Class Codes: H01L 2924/01045 : Rhodium [Rh]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01054 : Xenon [Xe]
• CPC Class Codes: H01L 2924/0106 : Neodymium [Nd]
• CPC Class Codes: H01L 2924/01067 : Holmium [Ho]
• CPC Class Codes: H01L 2924/01068 : Erbium [Er]
• CPC Class Codes: H01L 2924/0107 : Ytterbium [Yb]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01076 : Osmium [Os]
• CPC Class Codes: H01L 2924/01077 : Iridium [Ir]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/0132 : Binary Alloys
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/04941 : TiN
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/0781 : being an ohmic electrical conductor
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/19043 : being a resistor

Abstract

The substrate is placed over a pressure detection film, the element group is placed selectively over the substrate so that a conductive film functioning as an antenna formed over the substrate and a conductive film functioning as a bump formed over the element group overlap each other, the substrate and the element group are pressure-bonded to each other by applying pressure to the substrate and the element group so that the conductive film formed over the substrate and the conductive film functioning as a bump formed over the element group are electrically connected to each other, a value and distribution of pressure applied to the element group at the time of the pressure bonding are detected by the pressure detection film, and the pressure applied at the time of the pressure bonding is controlled, based on the detected pressure value and pressure distribution.

Claims

1. A pressure bonding method comprising:

placing a substrate over a pressure detection film;

placing an element group over the substrate so that a first conductive film formed over the substrate and a second conductive film of the element group overlap each other;

pressure-bonding the substrate and the element group so that the first conductive film formed over the substrate and the second conductive film of the element group are electrically connected to each other;

detecting a value and distribution of pressure applied to the element group, by the pressure detection film, at a time of the pressure bonding; and

controlling pressure applied to the element group after the detection, based on the detected value and distribution of pressure.

2. A pressure bonding method according to claim 1, wherein a silicon diaphragm pressure sensor is used as the pressure detection film.

3. A pressure bonding method according to claim 1, wherein a pressure sensor with a pressure-sensitive conductive rubber interposed between a pair of electrodes is used as the pressure detection film.

4. A pressure bonding method according to claim 1, wherein an anisotropic conductive film or an anisotropic conductive paste is interposed between the substrate and the element group when the substrate and the element group are placed overlapping each other.

5. A pressure bonding method according to claim 1, wherein a heat treatment is concurrently performed at the time of the pressure bonding.

6. A pressure bonding method according to claim 1, wherein an element group having flexibility is used as the element group.

7. A pressure bonding method according to claim 1 wherein as the value and distribution of pressure, a value and distribution of pressure applied to a connection region where the first conductive film formed over the substrate and the second conductive film of the element group are connected to each other and pressure applied to a region other than the connection region in the element group are detected.

8. A pressure bonding method according to claim 7, wherein a silicon diaphragm pressure sensor is used as the pressure detection film.

9. A pressure bonding method according to claim 7, wherein a pressure sensor with a pressure-sensitive conductive rubber interposed between a pair of electrodes is used as the pressure detection film.

10. A pressure bonding method according to claim 7, wherein an anisotropic conductive film or an anisotropic conductive paste is interposed between the substrate and the element group when the substrate and the element group are placed overlapping each other.

11. A pressure bonding method according to claim 7, wherein a heat treatment is concurrently performed at the time of the pressure bonding.

12. A pressure bonding method according to claim 7, wherein an element group having flexibility is used as the element group.

13. A pressure bonding method according to claim 1 wherein the pressure detection film is a film that colors when pressure is applied thereto, and

wherein the value and distribution of pressure are detected by optically measuring a tone of a color of the film that colors when pressure is applied thereto with an imaging device.

14. A pressure bonding method according to claim 13, wherein an anisotropic conductive film or an anisotropic conductive paste is interposed between the substrate and the element group when the substrate and the element group are placed overlapping each other.

15. A pressure bonding method according to claim 13, wherein a heat treatment is concurrently performed at the time of the pressure bonding.

16. A pressure bonding method according to claim 13, wherein an element group having flexibility is used as the element group.

17. A pressure bonding apparatus comprising:

a pressure detection film;

a pressing table;

a pressure-applying means that applies pressure to the pressing table; and

a controlling means that controls the pressure-applying means,

wherein the controlling means detects a value and distribution of pressure applied to the pressure detection film, and controls the pressure-applying means, based on the detected value and distribution of pressure.

18. A pressure bonding apparatus according to claim 17, wherein the pressure detection film is a silicon diaphragm pressure sensor.

19. A pressure bonding apparatus according to claim 17, wherein the pressure detection film is a pressure sensor with a pressure-sensitive conductive rubber interposed between a pair of electrodes.

20. A pressure bonding apparatus according to claim 17 wherein the pressure detection film has a portion that colors when pressure is applied thereto, and

wherein the value and distribution of pressure are detected by optically measuring a tone of a color of the portion that colors when pressure is applied thereto with an imaging device.

21. A pressure bonding apparatus according to claim 20, wherein the pressure detection film is provided over a supporting substrate that has a light-transmitting property.

22. A pressure bonding apparatus comprising:

a pressure detection film;

a pressing table;

a pressure-applying means that applies pressure to the pressing table, and

an imaging device provided below the pressure detection film,

wherein the pressure detection film has a portion that colors when pressure is applied thereto; and

wherein the imaging device optically measures a color generated in the pressure detection film so as to detect pressure distribution.

23. A pressure bonding apparatus according to claim 22, wherein the pressure detection film is provided over a supporting substrate that has a light-transmitting property.

24. A manufacturing method of a semiconductor device, comprising:

forming a peeling layer over a first substrate;

forming an element layer over the peeling layer, wherein the element layer includes an element formation layer including a transistor, a conductive film formed over the element formation layer so as to be electrically connected to the transistor, and a protective film formed so as to cover an edge portion of the conductive film;

irradiating the element layer selectively with laser light and attaching a first sheet material to the element layer thereafter, and then peeling the element layer and the first sheet material from the first substrate;

attaching a second sheet material to a surface of the element layer that is exposed by the peeling, and then peeling the first sheet material from the element layer;

forming a conductive bump over the protective film so as to be electrically connected to the conductive film, so that an element group including the element layer, the conductive bump, and the second sheet material is formed;

placing a second substrate over a pressure detection film;

placing the element group selectively over the second substrate so that a conductive film functioning as an antenna formed over the second substrate and the conductive bump overlap each other;

pressure-bonding the second substrate and the element group so that the conductive film formed over the second substrate and the conductive bump are electrically connected to each other;

detecting a value and distribution of pressure applied to the element group, by the pressure detection film, at a time of the pressure bonding; and

controlling pressure applied to the element group after the detection, based on the detected value and distribution of pressure.

25. A manufacturing method of a semiconductor device according to claim 24, wherein a silicon diaphragm pressure sensor is used as the pressure detection film.

26. A manufacturing method of a semiconductor device according to claim 24, wherein a pressure sensor with a pressure-sensitive conductive rubber interposed between a pair of electrodes is used as the pressure detection film.

27. A manufacturing method of a semiconductor device, according to claim 24, wherein an anisotropic conductive film or an anisotropic conductive paste is interposed between the second substrate and the element group, when the second substrate and the element group are placed overlapping each other.

28. A manufacturing method of a semiconductor device, according to claim 24, wherein a heat treatment is concurrently performed at the time of the pressure bonding.

29. A manufacturing method of a semiconductor device, according to claim 24, wherein a film having flexibility is used as the second sheet material.

30. A manufacturing method of a semiconductor device, comprising:

forming a peeling layer over a first substrate;

forming an element layer over the peeling layer, wherein the element layer includes an element formation layer including a transistor, a conductive film formed over the element formation layer so as to be electrically connected to the transistor, and a protective film formed so as to cover an edge portion of the conductive film;

irradiating the element layer selectively with laser light and attaching a first sheet material to the element layer thereafter, and then peeling the element layer and the first sheet material from the first substrate;

attaching a second sheet material to a surface of the element layer that is exposed by the peeling, and then peeling the first sheet material from the element layer;

forming a conductive bump over the protective film so as to be electrically connected to the conductive film, so that an element group including the element layer, the conductive bump, and the second sheet material is formed;

placing a second substrate over a film that colors when pressure is applied;

placing the element group selectively over the second substrate so that a conductive film functioning as an antenna formed over the second substrate and the conductive bump overlap each other;

pressure-bonding the second substrate and the element group so that the conductive film formed over the second substrate and the conductive bump are electrically connected to each other;

detecting a value and distribution of pressure applied to the element group, by optically measuring a tone of a color of the film by an imaging device, at a time of the pressure bonding; and

controlling pressure applied to the element group after the detection, based on the detected value and distribution of pressure.

31. A manufacturing method of a semiconductor device, according to claim 30, wherein an anisotropic conductive film or an anisotropic conductive paste is interposed between the second substrate and the element group, when the second substrate and the element group are placed overlapping each other.

32. A manufacturing method of a semiconductor device, according to claim 30, wherein a heat treatment is concurrently performed at the time of the pressure bonding.

33. A manufacturing method of a semiconductor device, according to claim 30, wherein a film having flexibility is used as the second sheet material.

34. A manufacturing method of a semiconductor device, comprising:

placing a substrate over a pressure detection film;

placing an element group comprising a transistor over the substrate so that a first conductive film formed over the substrate and a second conductive film of the element group overlap each other wherein the first conductive film comprises an antenna;

pressure-bonding the substrate and the element group so that the first conductive film formed over the substrate and the second conductive film of the element group are electrically connected to each other;

detecting a value and distribution of pressure applied to the element group, by the pressure detection film, at a time of the pressure bonding; and

controlling pressure applied to the element group after the detection, based on the detected value and distribution of pressure.

35. A manufacturing method of a semiconductor device according to claim 34, wherein a silicon diaphragm pressure sensor is used as the pressure detection film.

36. A manufacturing method of a semiconductor device according to claim 34, wherein a pressure sensor with a pressure-sensitive conductive rubber interposed between a pair of electrodes is used as the pressure detection film.

37. A manufacturing method of a semiconductor device according to claim 34, wherein an anisotropic conductive film or an anisotropic conductive paste is interposed between the substrate and the element group when the substrate and the element group are placed overlapping each other.

38. A manufacturing method of a semiconductor device according to claim 34, wherein a heat treatment is concurrently performed at the time of the pressure bonding.

39. A manufacturing method of a semiconductor device according to claim 34, wherein an element group having flexibility is used as the element group.

40. A manufacturing method of a semiconductor device, comprising:

forming a peeling layer over a first substrate;

forming an element layer over the peeling layer, wherein the element layer includes an element formation layer including a transistor, a conductive film formed over the element formation layer so as to be electrically connected to the transistor, and a protective film formed so as to cover an edge portion of the conductive film;

attaching a first sheet material to the element layer, and then peeling the element layer and the first sheet material from the first substrate;

attaching a second sheet material to a surface of the element layer that is exposed by the peeling, and then peeling the first sheet material from the element layer;

forming a conductive bump over the protective film so as to be electrically connected to the conductive film, so that an element group including the element layer, the conductive bump, and the second sheet material is formed;

placing a second substrate over a pressure detection film;

placing the element group selectively over the second substrate so that a conductive film functioning as an antenna formed over the second substrate and the conductive bump overlap each other;

pressure-bonding the second substrate and the element group so that the conductive film formed over the second substrate and the conductive bump are electrically connected to each other;

detecting a value and distribution of pressure applied to the element group, by the pressure detection film, at a time of the pressure bonding; and

controlling pressure applied to the element group after the detection, based on the detected value and distribution of pressure.

41. A manufacturing method of a semiconductor device according to claim 40, wherein a silicon diaphragm pressure sensor is used as the pressure detection film.

42. A manufacturing method of a semiconductor device according to claim 40, wherein a pressure sensor with a pressure-sensitive conductive rubber interposed between a pair of electrodes is used as the pressure detection film.

43. A manufacturing method of a semiconductor device, according to claim 40, wherein an anisotropic conductive film or an anisotropic conductive paste is interposed between the second substrate and the element group, when the second substrate and the element group are placed overlapping each other.

44. A manufacturing method of a semiconductor device, according to claim 40, wherein a heat treatment is concurrently performed at the time of the pressure bonding.

45. A manufacturing method of a semiconductor device, according to claim 40, wherein a film having flexibility is used as the second sheet material.