Film-forming method and film-forming equipment
First Claim
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1. A film forming method comprising:
- loading a plurality of wafers on a susceptor installed in a reaction chamber, heating the wafers, feeding process gas from a plurality of stages of openings formed in a gas feed nozzle installed so as to pass through a center of the susceptor, feeding the process gas obliquely downward from an uppermost openings among the plurality of stages of openings formed, and changing process gas feeding directions from the plurality of stages of the openings to the reaction chamber relatively.
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Abstract
A plurality of wafers are loaded on a susceptor installed in a reaction chamber, and the wafers are heated, and process gas is fed from a plurality of stages of openings formed in a gas feed nozzle installed so as to pass through the center of the susceptor, the process gas is fed obliquely downward from the uppermost openings, and the process gas feeding directions are changed to the reaction chamber relatively. The thickness of deposits on the wall of the reaction chamber is suppressed, the maintenance cycle of film forming equipment is extended, and the throughput can be improved.
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19 Claims
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1. A film forming method comprising:
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loading a plurality of wafers on a susceptor installed in a reaction chamber, heating the wafers, feeding process gas from a plurality of stages of openings formed in a gas feed nozzle installed so as to pass through a center of the susceptor, feeding the process gas obliquely downward from an uppermost openings among the plurality of stages of openings formed, and changing process gas feeding directions from the plurality of stages of the openings to the reaction chamber relatively. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. Film forming equipment comprising:
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a reaction chamber for forming a film on a wafer, a susceptor for loading a plurality of the wafers, a heater installed right under or inside the susceptor for heating the wafers, a gas feed nozzle, installed so as to pass through a central part of the susceptor, having a plurality of stages of openings for feeding process gas onto the wafers, and a rotating mechanism for changing the openings relatively to the reaction chamber, wherein;
uppermost stage of the openings have projections for feeding the process gas obliquely downward. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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Specification