SEMICONDUCTOR HAVING ENHANCED CARBON DOPING
First Claim
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1. A VCSEL comprising:
- a substrate;
a bottom DBR mirror disposed on the substrate;
a first conduction layer region of a first conductivity type, the first conduction layer region coupled to the bottom DBR mirror, an active layer region disposed on the first conduction layer region, the active layer region containing quantum wells;
a doped second conduction layer region of a second conductivity type, the doped second conduction layer region coupled to the active layer region;
a top mirror coupled to the second conduction layer region; and
wherein one or more of the layers comprise a dopant including small quantities of Al and repeated delta doping.
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Abstract
Semiconductors with enhanced strain. One embodiment includes a semiconductor device. The semiconductor device may include an epitaxial structure. The epitaxial structure includes one or more semiconductor layers and dielectric layers. One or more of the layers includes a dopant including small quantities of Al and repeated delta doping during expitaxial growth to form periods where surfaces are group III rich.
30 Citations
20 Claims
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1. A VCSEL comprising:
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a substrate;
a bottom DBR mirror disposed on the substrate;
a first conduction layer region of a first conductivity type, the first conduction layer region coupled to the bottom DBR mirror, an active layer region disposed on the first conduction layer region, the active layer region containing quantum wells;
a doped second conduction layer region of a second conductivity type, the doped second conduction layer region coupled to the active layer region;
a top mirror coupled to the second conduction layer region; and
wherein one or more of the layers comprise a dopant including small quantities of Al and repeated delta doping. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of fabricating a VCSEL epitaxial structure including epitxial layers, the method comprising:
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forming a bottom mirror on a substrate wherein forming a bottom mirror comprises forming alternating layers of materials with different indices of refraction;
forming a first conduction layer region on the bottom mirror;
forming an active layer region that contains quantum wells on the first conduction layer region;
forming a second conduction layer region on the active layer region;
forming a top mirror on the second conduction layer region; and
applying a dopant including small quantities of Al and repeated delta doping during expitaxial growth. - View Dependent Claims (11, 12, 13, 14)
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15. A semiconductor device, wherein the semiconductor comprises:
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an epitaxial structure, wherein the epitaxial structure comprises one or more semiconductor layers and dielectric layers; and
wherein one or more of the layers comprises a dopant including small quantities of Al and repeated delta doping during expitaxial growth. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification