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Gate layouts for transistors

  • US 20070138549A1
  • Filed: 12/19/2005
  • Published: 06/21/2007
  • Est. Priority Date: 12/19/2005
  • Status: Active Grant
First Claim
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1. A transistor comprising:

  • a semiconductor material having a top surface, the semiconductor material comprising a plurality of drain regions and a plurality of source regions, wherein the plurality of drain regions and the plurality of source regions are formed in alternating rows or columns; and

    a plurality of polysilicon chains overlaying and insulated from the top surface of the semiconductor material, the plurality of polysilicon chains separating the plurality of drain regions from the plurality of source regions, wherein the plurality of polysilicon chains are disconnected from and substantially parallel to one another.

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