Semiconductor device and manufacturing method thereof

• US 20070170505A1
• Filed: 12/22/2006
• Published: 07/26/2007
• Est. Priority Date: 12/27/2005
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Tokunaga, Hajime
• Granted Patent: US 8,476,632 B2
• Time in Patent Office: Days
• US Class Current: 257/347
• CPC Class Codes: G02F 1/13306 Circuit arrangements or driving methods for the control of single liquid crystal cells G02F1/132, G02F1/133382 take precedence
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: G02F 1/1362 Active matrix addressed cells G02F1/134336, G02F1/134363 take precedence
• CPC Class Codes: G02F 1/167 by electrophoresis
• CPC Class Codes: G06K 19/07703 the interface being visual
• CPC Class Codes: G06K 19/07707 the visual interface being a display, e.g. LCD or electronic ink
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/13 combined with thin-film or thick-film passive components
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/78627 with a significant overlap between the lightly doped drain and the gate electrode, e.g. GOLDD
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays

Abstract

To provide a wireless identification semiconductor device provided with a display function, which is capable of effectively utilizing electric power supplied by an electromagnetic wave. The following are included: an antenna; a power source generating circuit electrically connected to the antenna; an IC chip circuit and a display element electrically connected to the power source generating circuit; a first TFT provided in the power source generating circuit; a second TFT provided in the IC chip circuit; a third TFT provided in the display element; an insulating film provided to cover the first to third TFTs; a first source electrode and a first drain electrode, a second source electrode and a second drain electrode, and a third source electrode and a third drain electrode which are formed over the insulating film; and a pixel electrode electrically connected to the third source electrode or the third drain electrode. The first source electrode or the first drain electrode is electrically connected to the antenna.

Claims

1. A semiconductor device comprising:

a conductive film functioning as an antenna;

a power source generating circuit electrically connected to the conductive film functioning as an antenna;

an integrated circuit and a display element electrically connected to the power source generating circuit;

a constant voltage circuit for supplying a first voltage to the integrated circuit;

a displaying power source circuit for supplying a second voltage to the display element;

a first thin film transistor provided in the power source generating circuit;

a second thin film transistor provided in the integrated circuit;

a third thin film transistor provided in the display element;

an insulating film provided to cover the first thin film transistor, the second thin film transistor, and the third thin film transistor;

a source electrode and a drain electrode of the first thin film transistor, a source electrode and a drain electrode of the second thin film transistor, and a source electrode and a drain electrode of the third thin film transistor which are formed over the insulating film; and

a pixel electrode electrically connected to the source electrode or the drain electrode of the third thin film transistor,

wherein the source electrode or the drain electrode of the first thin film transistor is electrically connected to the conductive film functioning as an antenna.

3. The semiconductor device according to claim 1 or 2, wherein the first thin film transistor, the second thin film transistor, and the third thin film transistor are provided over a same substrate.

4. The semiconductor device according to claim 3, the substrate is a substrate having flexibility.

5. The semiconductor device according to claim 1 or 2, wherein the display element includes a display portion provided with a liquid crystal element.

6. The semiconductor device according to claim 1 or 2, wherein the display element includes a display portion provided with a light-emitting element.

7. The semiconductor device according to claim 1 or 2, wherein the display element includes a display portion provided with an electrophoresis element.

2. A semiconductor device comprising:

a conductive film functioning as an antenna;

a power source generating circuit electrically connected to the conductive film functioning as an antenna;

an integrated circuit and a display element electrically connected to the power source generating circuit;

a first thin film transistor provided in the power source generating circuit;

a second thin film transistor provided in the integrated circuit;

a third thin film transistor provided in the display element;

an insulating film provided to cover the first thin film transistor, the second thin film transistor, and the third thin film transistor;

a source electrode and a drain electrode of the first thin film transistor, a source electrode and a drain electrode of the second thin film transistor, and a source electrode and a drain electrode of the third thin film transistor which are formed over the insulating film; and

a pixel electrode electrically connected to the source electrode or the drain electrode of the third thin film transistor,

wherein the source electrode or the drain electrode of the first thin film transistor is electrically connected to the conductive film functioning as an antenna,

wherein the first thin film transistor includes a first semiconductor film, a first gate insulating film provided over the first semiconductor film, and a first gate electrode provided over the first gate insulating film,

wherein the second thin film transistor includes a second semiconductor film, a second gate insulating film provided over the second semiconductor film, and a second gate electrode provided over the second gate insulating film,

wherein the third thin film transistor includes a third semiconductor film, a third gate insulating film provided over the third semiconductor film, and a third gate electrode provided over the third gate insulating film, and

wherein the third gate insulating film is different in thickness from the first gate insulating film and the second gate insulating film.

8. A manufacturing method of a semiconductor device, comprising:

forming a semiconductor film over a substrate;

etching the semiconductor film to form a first semiconductor film and a second semiconductor film;

forming a first gate insulating film so as to cover the first semiconductor film and the second semiconductor film;

removing the first gate insulating film formed above the second semiconductor film, and then etching the second semiconductor film to form a third semiconductor film;

forming a second gate insulating film so as to cover the first gate insulating film and the third semiconductor film;

forming a first gate electrode above the first semiconductor film with the first gate insulating film and the second gate insulating film interposed therebetween;

forming a second gate electrode above the third semiconductor film with the second gate insulating film interposed therebetween;

adding an impurity element into the first semiconductor film and the third semiconductor film to form source regions and drain regions;

forming an interlayer insulating film so as to cover the first gate electrode and the second gate electrode;

forming a first conductive film which is electrically connected to the source region or the drain region of the first semiconductor film over the interlayer insulating film;

forming a second conductive film which is electrically connected to the source region or the drain region of the third semiconductor film over the interlayer insulating film; and

forming a conductive film which functions as an antenna, which is electrically connected to the second conductive film.

9. A manufacturing method of a semiconductor device, comprising:

forming a semiconductor film over a substrate;

etching the semiconductor film to form a first semiconductor film and a second semiconductor film;

forming a first gate insulating film so as to cover the first semiconductor film and the second semiconductor film;

removing the first gate insulating film formed above the second semiconductor film, and then etching the second semiconductor film to form a third semiconductor film;

forming a second gate insulating film so as to cover the first gate insulating film and the third semiconductor film;

forming a first gate electrode above the first semiconductor film with the first gate insulating film and the second gate insulating film interposed therebetween;

forming a second gate electrode above the third semiconductor film with the second gate insulating film interposed therebetween;

adding an impurity element into the first semiconductor film and the third semiconductor film to form source regions and drain regions;

forming an interlayer insulating film so as to cover the first gate electrode and the second gate electrode;

forming a first conductive film which is electrically connected to the source region or the drain region of the first semiconductor film over the interlayer insulating film;

forming a second conductive film which is electrically connected to the source region or the drain region of the third semiconductor film over the interlayer insulating film;

forming a pixel electrode which is electrically connected to the first conductive film; and

forming a conductive film which functions as an antenna, which is electrically connected to the second conductive film.

10. A manufacturing method of a semiconductor device, comprising:

forming a semiconductor film over a substrate;

forming a gate insulating film so as to cover the semiconductor film;

forming a gate electrode above the semiconductor film with the insulating film interposed therebetween;

adding an impurity element into the semiconductor film to form a source region and a drain region;

forming an interlayer insulating film so as to cover the gate electrode;

over the interlayer insulating film, forming a first conductive film which functions as a pixel electrode, and a second conductive film which is electrically connected to the source region or the drain region of the semiconductor film;

forming a conductive film which functions as an antenna, which is electrically connected to the second conductive film;

providing an opposing electrode so as to be opposite to the first conductive film; and

forming a microcapsule between the first conductive film and the opposing electrode.